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    LH532100BD Search Results

    LH532100BD Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LH532100BD Sharp CMOS 2M(256K x 8) Mask-Programmable ROM Original PDF
    LH532100BD Sharp CMOS 2M (256K x 8) Mask-Programmable ROM Scan PDF
    LH532100BD-1 Sharp CMOS 2M(256K x 8) Mask-Programmable ROM Original PDF
    LH532100BD-1 Sharp CMOS 2M (256K x 8) Mask-Programmable ROM Scan PDF

    LH532100BD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    32DIP

    Abstract: 32-PIN LH532100B 277A5
    Text: LH532100B CMOS 2M 256K x 8 MROM FEATURES DESCRIPTION • 262,144 words × 8 bit organization The LH532100B is a 2M-bit mask-programmable ROM organized as 262,144 × 8 bits. It is fabricated using silicon-gate CMOS process technology. PIN CONNECTIONS 32-PIN DIP


    Original     		PDF LH532100B LH532100B 32-PIN 32QFJ450 32-pin, 450-mil 600-mil 32DIP 277A5

    32DIP

    Abstract: 32-PIN LH532100B-1 532100B1-6 timing DIAGRAM OF ROM
    Text: LH532100B-1 FEATURES • 262,144 words x 8 bit organization • Access time: 120 ns MAX. • Static operation CMOS 2M (256K × 8) Mask-Programmable ROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW OE1/OE1/DC 1 32 VCC A16 2 31 DC • TTL compatible I/O


    Original     		PDF LH532100B-1 32-PIN 32QFJ450 32-pin, 450-mil LH532100B 600-mil DIP032-P-0600) 32DIP LH532100B-1 532100B1-6 timing DIAGRAM OF ROM

    32DIP

    Abstract: 32-PIN LH532100B CE-2212
    Text: LH532100B CMOS 2M 256K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 262,144 words × 8 bit organization The LH532100B is a 2M-bit mask-programmable ROM organized as 262,144 × 8 bits. It is fabricated using silicon-gate CMOS process technology. PIN CONNECTIONS


    Original     		PDF LH532100B LH532100B 32-PIN 32QFJ450 32-pin, 450-mil 600-mil 32DIP CE-2212

    32DIP

    Abstract: 32-PIN LH532100B-1
    Text: LH532100B-1 FEATURES • 262,144 words x 8 bit organization • Access time: 120 ns MAX. • Static operation CMOS 2M (256K × 8) MROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW OE1/OE1/DC 1 32 VCC A16 2 31 DC • TTL compatible I/O A15 3 30 A17 4 29


    Original     		PDF LH532100B-1 32-PIN 32QFJ450 32-pin, 450-mil LH532100B 600-mil DIP032-P-0600) 32DIP LH532100B-1

    A1SH

    Abstract: 32DIP 32-PIN LH532100B-1 A14C
    Text: LH532100B-1 FEATURES CMOS 2M 256K x 8 Mask-Programmable ROM PIN CONNECTIONS • 262,144 words x 8 bit organization • Access time: 120 ns (MAX.) 32-PIN DIP 32-PIN SOP TOP VIEW f \ O E ^ O E i/D C C • Static operation • TTL compatible I/O • Three-state outputs


    OCR Scan     		PDF LH532100B-1 32-pin, 600-miI 525-miI 450-mil 400-mil A1SH 32DIP 32-PIN LH532100B-1 A14C

    536G

    Abstract: LH534600
    Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)


    OCR Scan     		PDF LH53259D/N/T LH53517D/N/T/TR LH531VOOD/N/TAJ LH53V1ROON/T LH530800AD/AN/AU LHS30800AD/AN-Y LH531OOOBD/BN LH531000BN-S LH531024D/N/U LH532100BD 536G LH534600

    Untitled

    Abstract: No abstract text available
    Text: CM O S 2M 256K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 262,144 x 8 bit organization T h e LH 5 321 00 B is a m ask-program m able R O M organized a s 262,144 x 8 bits. It is fabricated using silicon-gate C M O S p rocess technology. • Access time: 120/150 ns (MAX.)


    OCR Scan     		PDF 32-pin, 600-mil 525-mil 32-PIN 2100B

    Untitled

    Abstract: No abstract text available
    Text: C M OS 2M 256K x 8 M ask-Program m able ROM FEATURES • 262,144 x 8 bit organization • Access time: 120/150 ns (MAX.) • Low power consumption: Operating: 275 mW (MAX.) DESCRIPTION The LH532100B is a mask-programmable ROM organized as 262,144 x 8 bits. It is fabricated using


    OCR Scan     		PDF LH532100B 32-pin, 600-mil 525-mil 32-PIN 32-Din, DIP32-P-600)

    J-1100

    Abstract: No abstract text available
    Text: LH532100B-1 FEATURES • 262,144 words x 8 bit organization CMOS 2M 256K x 8 MROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW • Access time: 120 ns (MAX.) f • Three-state outputs • Single +5 V power supply • Power consumption: Operating: 275 mW (MAX.)


    OCR Scan     		PDF LH532100B-1 32-PIN 32-pin, 600-mil 525-mil 450-mil J-1100

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    DIC14

    Abstract: No abstract text available
    Text: LH532100B-1 FEATURES • 262,144 words x 8 bit organization • Access time: 120 ns MAX. CMOS 2M (256K x 8) M a sk-P ro g ra m m a b le ROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW s • Three-state outputs • Single +5 V power supply • Power consumption:


    OCR Scan     		PDF LH532100B-1 32-pin, 600-mil 525-mil 450-mil 400-mil DIC14

    Untitled

    Abstract: No abstract text available
    Text: CMOS 2M 256K x 8 MROM FEATURES DESCRIPTION • 262,144 w ords x 8 bit organization • Access tim e: 150 ns (MAX.) The LH532100B is a 2M-bit mask-programmable ROM organized as 262,144 x 8 bits. It is fabricated using silicon-gate CMOS process technology.


    OCR Scan     		PDF 32-pin, 600-mil 525-mil 450-mil 400-m LH532100B

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


    OCR Scan     		PDF 416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256

    lh5359

    Abstract: e5bx
    Text: Ffe MASK ROM * ★ • MASK ROMs New product Under development * Features • Product lineup covers 11 capacity ranges from 256 k-bit to 128 M-bit. • Product variations with 3 types o f pinout including JEDEC standard EPROM, Mask ROM specific and Flash memory compatible pinout.


    OCR Scan     		PDF LH-532KXX LH532100BD/BN/BT/BS/BSR/BU 532048D 53V2P00A 532600D 532000B 532000BD LH-532C LH-5326XX lh5359 e5bx

    DIC20

    Abstract: No abstract text available
    Text: CMOS 2M 256K x 8 MROM FEATURES DESCRIPTION • 262,144 words x 8 bit organization The LH532100B is a 2M-bit m ask-program m able ROM organized as 262,144 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Low-power consumption: Operating: 275 mW (MAX.)


    OCR Scan     		PDF 32-pin, 600-mil 525-mil 450-mil 400-mil LH532100B DIC20

    capacitor A7C

    Abstract: 453J 32TSOP 32DIP 32-PIN A15H LH532100B
    Text: CMOS 2M 256K x 8 M ask-Program m able ROM FEATURES DESCRIPTION • 262,144 words x 8 bit organization The LH532100B is a 2M-bit mask-programmable ROM organized as 262,144 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)


    OCR Scan     		PDF 32-pin, 600-mil 525-mil 450-mil 400-mil LH532100B capacitor A7C 453J 32TSOP 32DIP 32-PIN A15H

    500-101

    Abstract: No abstract text available
    Text: CMOS 2M 256K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 262,144 words x 8 bit organization The LH532100B is a 2M-bit mask-programmable ROM organized as 262,144 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)


    OCR Scan     		PDF 32-pin, 600-mil 525-mil 450-mil 400-mil LH532100B 500-101

    ICE ICC3

    Abstract: sharp mask rom
    Text: CMOS 2M 256K x 8 Mask Programmable ROM FEATURES • 262,144 x 8 bit organization • Access time: 120/150 ns (MAX.) • Low power consumption: DESCRIPTION The LH532100B is a mask programmable ROM organized as 262,144 x 8 bits. It is fabricated using silicon-gate CMOS process technology.


    OCR Scan     		PDF LH532100B 32-PIN LH532 32-Din. 600-mil DIP32-P-600) 32-pin, 525-mil OP32-P-525) ICE ICC3 sharp mask rom

    lh5s4

    Abstract: LH-MN47XX lh5s4axx LH5359 LH5s lh5317 LH532CXX 32DIP
    Text: MEMORIES • JEDEC Standard EPROM Pinout • Low voltage operation 3 V, 1.8 V Access time Bit Capacity configuration 1M 2M 4M Model No. LH53V1ROON/T LH53V2R00AN/AT LH53V2T00E LH53V2YOONÆ LH53V4T00E LH53V4R00AN/AT LH53V4Y00NÆ x 8 x 8 x 8 User’s No. Supply


    OCR Scan     		PDF LH53V1ROON/T LH53V2R00AN/AT LH53V2T00E LH53V2YOONÆ LH53V4T00E LH53V4R00AN/AT LH53V4Y00NÆ 32SOP/32TSOP 32TSOP lh5s4 LH-MN47XX lh5s4axx LH5359 LH5s lh5317 LH532CXX 32DIP

    Untitled

    Abstract: No abstract text available
    Text: LH532100B-1 FEATURES • 262,144 words x 8 bit organization CMOS 2M 256K x 8 MROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW • Access time: 120 ns (MAX.) / O E ^Ô Ë ^D C H • Static operation • TTL compatible I/O • Three-state outputs • Power consumption:


    OCR Scan     		PDF LH532100B-1 32-PIN 32-pin, 600-mil 525-mil 450-mil

    Untitled

    Abstract: No abstract text available
    Text: CMOS 2M 256K x 8 Mask-Programmable ROM FEATURES • 2 6 2 ,1 4 4 x 8 bit organization • Access time: 120/150 ns (M AX.) • Low-power consumption: DESCRIPTION The LH532100B is a mask-programmable ROM organized as 262,144 x 8 bits. It is fabricated using


    OCR Scan     		PDF LH532100B 32-pin, 600-m 525-m 32-PIN 32-PtN 600-mil