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    LH531000B Search Results

    LH531000B Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LH531000B Sharp CMOS 1M (128K x 8) MROM Original PDF
    LH531000BD Sharp LH531000BD CMOS 1M (128K x 8) Mask Programmable ROM 28-pin DIP Original PDF
    LH531000BN Sharp LH531000BN CMOS 1M (128K x 8) Mask Programmable ROM 28-pin SOP Original PDF
    LH531000BN-S Sharp LH531000BN-S CMOS 1M (128K x 8) Mask Programmable ROM, Low-Voltage Operation 28-pin SOP Original PDF
    LH531000BN-S Sharp CMOS 1M (128K x 8) 3 V-Drive Mask-Programmable ROM Scan PDF
    LH531000B-S Sharp CMOS 1M (128K x 8) 3 V-Drive MROM Original PDF

    LH531000B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LH531000B

    Abstract: LH531000BN-S LH531000B-S
    Text: LH531000B-S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)


    Original     		PDF LH531000B-S LH531000B-S 28-pin, 450-mil 28-PIN P028-P-0450) 28SOP LH531000B LH531000B LH531000BN-S

    LH531000B

    Abstract: LH531000BN-S LH531000B-S
    Text: LH531000B-S CMOS 1M 128K x 8 3 V-Drive Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology.


    Original     		PDF LH531000B-S LH531000B-S 28-PIN 28-pin, 450-mil A8-P-0450) 28SOP LH531000B LH531000B LH531000BN-S

    mrom

    Abstract: LH531000B
    Text: LH531000B CMOS 1M 128K x 8 MROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)


    Original     		PDF LH531000B LH531000B 28-PIN 28-pin, 600-mil 450-mil 28SOP mrom

    LH531000B

    Abstract: No abstract text available
    Text: LH531000B CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)


    Original     		PDF LH531000B LH531000B 28-PIN 28-pin, 600-mil 450-mil 28SOP

    sharp lh53

    Abstract: sharp lh53 1M
    Text: CMOS 1M 128K x 8 Mask-Programmable ROM DESCRIPTION FEATURES • 131,072 x 8 bit organization • Access time: 150 ns (M AX.) • Low power consumption: The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology.


    OCR Scan     		PDF LH531000B 28-pin, 600-m 450-m 44-pin I-------15 600-mil DIP28-P-600) sharp lh53 sharp lh53 1M

    Untitled

    Abstract: No abstract text available
    Text: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Prive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)


    OCR Scan     		PDF LH531000B-S 28-pin, 450-mil OP028-P-0450) LH531000BN-S

    Untitled

    Abstract: No abstract text available
    Text: PRIORITY CM O S 1M 128K X 8 Mask-Programmable ROM FEATURES • 131,072 words x 8 bit organization • Access time: 150 ns (MAX.) • Low power consumption: Operating: 192.5 mW (MAX.) Standby: 550jiW(MAX.) DESCRIPTION The LH531000B is a mask-programmable ROM


    OCR Scan     		PDF 550jiW 28-pin, 600-mil 450-mil LH531000B 28-PIN

    531000B

    Abstract: 531000
    Text: CMOS 1 M 128K x 8 MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.) • Low power consumption:


    OCR Scan     		PDF 28-pin, 600-mil 450-mil LH531000B 28-PIN 450-rnil LH531000B 531000B 531000

    lh531

    Abstract: LH531000B LH531000BN-S LH531000B-S
    Text: L H ^ I n n O R l v / V * v u v - C ^ CMOS 1M 128K x 8 w _ 3 V-D rive M a sk-P ro g ram m a ble ROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using


    OCR Scan     		PDF LH531000B-S 28-pin, 450-mil LH531000B-S 28-pin LH531000B lh531 LH531000BN-S

    sharp mask rom

    Abstract: DIP028-P-0600
    Text: CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization • Access time: 150 ns (MAX.) The LH531000B is a m ask-program mable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology.


    OCR Scan     		PDF 28-PIN LH531000B 28-pin, 600-mil 450-mil LH531000B sharp mask rom DIP028-P-0600

    Untitled

    Abstract: No abstract text available
    Text: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Power consumption:


    OCR Scan     		PDF LH531000B-S 28-pin, 450-mil 28-PIN I000B OP028-P-0450)

    431 capacitor NCC

    Abstract: No abstract text available
    Text: LH531000B CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 1 31,072 x 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (M AX.)


    OCR Scan     		PDF LH531000B LH531000B 28-pin, 600-m 450-m 44-pin, 28-PIN 600-mil 431 capacitor NCC

    sharp mask rom

    Abstract: No abstract text available
    Text: CMOS 1 M 128 K x 8 MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B is a m ask-program m able ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.) • Low power consumption:


    OCR Scan     		PDF LH531000B 28-PIN 28-pin, 600-mil 450-mil LH531000B sharp mask rom

    sharp mask rom 44-pin

    Abstract: 1417D lh53
    Text: CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate C M O S process technology. • Access time: 150 ns (MAX.)


    OCR Scan     		PDF 28-pin, 600-mil 450-mil 44-pin, 14x14 44-PIN LH531000B 28-PIN sharp mask rom 44-pin 1417D lh53

    sharp lh531

    Abstract: sharp mask rom
    Text: CMOS 1M 128K FEATURES • 131,072 x 8 bit organization • Access time: 150 ns (MAX. • Low power consumption: Operating: 192.5 mW (MAX.) x 8) Mask Programmable ROM DESCRIPTION The LH531000B is a mask programmable ROM organized as 131,072 x 8 bits. It is fabricated using


    OCR Scan     		PDF LH531000B 28-pin, 600-mil 450-mil 44-pin, 44-PIN 28-PIN 31000A-6 sharp lh531 sharp mask rom

    sharp mask rom 44-pin

    Abstract: sharp mask rom LH53 DIP28-P-600 L3433
    Text: S HARP CORP LH531000B L IE 131,072 x 8 bit organization • Access time: 150 ns MAX. • Low power consumption: Operating: 192.5 mW (MAX.) û lfl07T fl CMOS 1M (128K FEATURES • D x DGDT ÛS M Tb4 ISRPJ 8) Mask-Programmable ROM DESCRIPTION The LH531000B is a mask-programmable ROM


    OCR Scan     		PDF fllfl071fl LH531OOOB 28-pin, 600-mil 450-mil 44-pin, 14x14 LH531000B 28-PIN sharp mask rom 44-pin sharp mask rom LH53 DIP28-P-600 L3433

    Untitled

    Abstract: No abstract text available
    Text: LH531000B-S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)


    OCR Scan     		PDF LH531000B-S 28-pin, 450-mil LH531000B-S 28-PIN OP028-P-0450)

    536G

    Abstract: LH534600
    Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)


    OCR Scan     		PDF LH53259D/N/T LH53517D/N/T/TR LH531VOOD/N/TAJ LH53V1ROON/T LH530800AD/AN/AU LHS30800AD/AN-Y LH531OOOBD/BN LH531000BN-S LH531024D/N/U LH532100BD 536G LH534600

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


    OCR Scan     		PDF IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02

    LH231G

    Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
    Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200


    OCR Scan     		PDF 28DIP 28DIP LH2389D LH23128D LH23286D LH236120 LH2310006D LH231G lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235

    lh5s4

    Abstract: lh537 48-TSOP LH5s 42-DIP 48TSOP1 LH5364P00D LH538 LH5S46
    Text: MEMORIES • Mask ROM Specific Pinout ★ U n d e rd e v e lo p m e n t • 3 V 3 .3 V operation Access time B it C a p a c ity configuration 1M x8 2M x 8/x 16 4M x 8/x 16 8M x 8/x 16 16M x 8/x 16 32 M x 8/x 16 64M 128M * x 8/x 16 x 16 Readable at 2.7 V.


    OCR Scan     		PDF LH531000BN-S LH53V2P00AN/AT LH53V4P00N/T LH53V8500N/T LH53V16500AN/AT LH53V32500AN-2 LH53V32500AT-2 LH53V64P00T LH53V64POON LH53V12800T lh5s4 lh537 48-TSOP LH5s 42-DIP 48TSOP1 LH5364P00D LH538 LH5S46

    flash 64m

    Abstract: No abstract text available
    Text: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161


    OCR Scan     		PDF 100ns 120ns 150ns 256kj LH53259 LH53517 LH531V00 LH530800A LH531024 LH532048 flash 64m

    sharp mask rom

    Abstract: LH53820 LH5322 lh5384
    Text: SHARP CORP bGE D • 000^435 40 e! f l l f l ü ? » S R P J T - H é - o - jS SHARP LH5316400D ■ M Description The LH5316400D is a 16M bit CMOS mask ROM organized as 2,0 97 ,1 5 2 x8 bits. It is packaged in 36-pin DIP which provides mask ROM specific pinout compatible with 28-pin 1 M mask ROM.


    OCR Scan     		PDF LH5316400D LH5316400D 36-pin 28-pin 150ns LH538400A LH538200 16M-- LH5316400 sharp mask rom LH53820 LH5322 lh5384

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


    OCR Scan     		PDF 109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506