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    LH531 Search Results

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    LH531 Price and Stock

    Sharp Microelectronics of the Americas LH531HR2

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    Bristol Electronics LH531HR2 9,000
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    Sharp Microelectronics of the Americas LH531HT5

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    Bristol Electronics LH531HT5 1,560
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    Sharp Microelectronics of the Americas LH531734

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    Quest Components LH531734 330
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    Sharp Microelectronics of the Americas LH531GP5

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    Quest Components LH531GP5 68
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    Sensata Technologies 3NT01L-H5312

    Thermostats
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    LH531 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LH531000 Sharp High Speed CMOS 1M Mask ROM for Low Power Consumption with Nibble Mode Original PDF
    LH531000B Sharp CMOS 1M (128K x 8) MROM Original PDF
    LH531000BD Sharp LH531000BD CMOS 1M (128K x 8) Mask Programmable ROM 28-pin DIP Original PDF
    LH531000BN Sharp LH531000BN CMOS 1M (128K x 8) Mask Programmable ROM 28-pin SOP Original PDF
    LH531000BN-S Sharp LH531000BN-S CMOS 1M (128K x 8) Mask Programmable ROM, Low-Voltage Operation 28-pin SOP Original PDF
    LH531000BN-S Sharp CMOS 1M (128K x 8) 3 V-Drive Mask-Programmable ROM Scan PDF
    LH531000B-S Sharp CMOS 1M (128K x 8) 3 V-Drive MROM Original PDF
    LH531024 Sharp CMOS 1M (64K x 16) MROM Original PDF
    LH531024D Sharp CMOS 1M(64M x 16) MROM Original PDF
    LH531024N Sharp CMOS 1M(64M x 16) MROM Original PDF
    LH531024U Sharp CMOS 1M(64M x 16) MROM Original PDF
    LH5316500CD Sharp EPROM Parallel Async Original PDF
    LH5316500CN Sharp EPROM Parallel Async Original PDF
    LH5316600D Sharp EPROM Parallel Async Original PDF
    LH5316600N Sharp EPROM Parallel Async Original PDF
    LH5316P00B Sharp CMOS 16M (2M x 8-1M x 16) MROM Original PDF
    LH5316P00BN Sharp CMOS 16M(2M x 8, 1M x 16) MROM Original PDF
    LH5316P00CD Sharp EPROM Parallel Async Original PDF
    LH5316P00CN Sharp EPROM Parallel Async Original PDF
    LH5316P00CT Sharp EPROM Parallel Async Original PDF

    LH531 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    40-pin EPROM pinout

    Abstract: 44-PIN LH531024 QFJ044-P-S650 C1161
    Text: LH531024 FEATURES • 65,536 words x 16 bit organization CMOS 1M 64K × 16 MROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW • Access time: 100 ns (MAX.) • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 µW (MAX.) VCC NC 1 40 CE 2 39 NC


    Original     		PDF LH531024 40-PIN 40-pin, 600-mil 525-mil 44QFJ-1 44-pin, 650-mil 40-pin EPROM pinout 44-PIN LH531024 QFJ044-P-S650 C1161

    42-PIN

    Abstract: 44-PIN
    Text: CMOS 16M 2M x 8/1M × 16 Mask-Programmable ROM LH5316500C FEATURES • 2,097,152 words × 8 bit organization (Byte mode) 1,048,576 words × 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.)


    Original     		PDF LH5316500C 42-pin, 600-mil 44-pin, LH5316500C 16M-bit 42-PIN 44SOP 44-PIN

    a9231

    Abstract: LH531V00 32DIP 32-PIN lh531
    Text: LH531V00 FEATURES • 131,072 words x 8 bit organization • Access time: 100 ns MAX. CMOS 1M (128K × 8) Mask-Programmable ROM PIN CONNECTIONS TOP VIEW 32-PIN DIP 32-PIN SOP OE1/OE1/DC 1 32 VCC A16 2 31 NC A15 3 30 NC A12 4 29 A14 A7 5 28 A13 A6 6 27 A8


    Original     		PDF LH531V00 32-PIN LH531V00 32TSOP 32-pin, 600-mil DIP032-P-0600) a9231 32DIP lh531

    LH531000B

    Abstract: LH531000BN-S LH531000B-S
    Text: LH531000B-S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 500 ns (MAX.)


    Original     		PDF LH531000B-S LH531000B-S 28-pin, 450-mil 28-PIN P028-P-0450) 28SOP LH531000B LH531000B LH531000BN-S

    LH531000B

    Abstract: LH531000BN-S LH531000B-S
    Text: LH531000B-S CMOS 1M 128K x 8 3 V-Drive Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology.


    Original     		PDF LH531000B-S LH531000B-S 28-PIN 28-pin, 450-mil A8-P-0450) 28SOP LH531000B LH531000B LH531000BN-S

    mrom

    Abstract: LH531000B
    Text: LH531000B CMOS 1M 128K x 8 MROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)


    Original     		PDF LH531000B LH531000B 28-PIN 28-pin, 600-mil 450-mil 28SOP mrom

    44-PIN

    Abstract: LH5316P00B
    Text: LH5316P00B FEATURES • 2,097,152 x 8 bit organization Byte mode: BYTE = VIL 1,048,576 × 16 bit organization (Word mode: BYTE = VIH) CMOS 16M (2M × 8/1M × 16) MROM PIN CONNECTIONS 44-PIN SOP TOP VIEW NC 1 44 NC A18 2 43 A19 A17 3 42 A8 A7 4 41 A9 • Supply current:


    Original     		PDF LH5316P00B 44-PIN D15/A-1 44SOP 44-pin, 600-mil OP044-P-600) LH5316P00N LH5316P00B

    32DIP

    Abstract: 32-PIN LH531V00
    Text: LH531V00 FEATURES • 131,072 words x 8 bit organization • Access time: 100 ns MAX. CMOS 1M (128K × 8) MROM PIN CONNECTIONS TOP VIEW 32-PIN DIP 32-PIN SOP OE1/OE1/DC 1 32 VCC A16 2 31 NC A15 3 30 NC A12 4 29 A14 A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8


    Original     		PDF LH531V00 32-PIN LH531V00 32TSOP 32-pin, 600-mil DIP032-P-0600) 32DIP

    LH531000B

    Abstract: No abstract text available
    Text: LH531000B CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words × 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)


    Original     		PDF LH531000B LH531000B 28-PIN 28-pin, 600-mil 450-mil 28SOP

    IC 2030 PIN CONNECTIONS

    Abstract: No abstract text available
    Text: LH531VOO FEATURES • 131,072 words x 8 bit organization • Access time: 100 ns MAX. CMOS 1M (128K x 8) Mask-Programmable ROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TO P VIEW s O E ^ Ö li/ D C C • Power consumption: Operating: 275 mW (MAX.) Standby: 550 (iW (MAX.)


    OCR Scan     		PDF LH531VOO 32-pin, 600-mil 525-mil 32-PIN LH531V00 IC 2030 PIN CONNECTIONS

    40-pin EPROM pinout

    Abstract: ta 1275 az
    Text: LH531024 FEATURES • 65,536 words x 16 bit organization CMOS 1M 64K x 16 M a sk-P ro g ra m m a b le ROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TO P VIEW • Access time: 100 ns (MAX.) / NC C • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 |j.W (MAX.)


    OCR Scan     		PDF LH531024 40-pin, 600-mil 525-mil 44-pin, 650-mil 40-PIN 40-pin EPROM pinout ta 1275 az

    sharp lh53

    Abstract: sharp lh53 1M
    Text: CMOS 1M 128K x 8 Mask-Programmable ROM DESCRIPTION FEATURES • 131,072 x 8 bit organization • Access time: 150 ns (M AX.) • Low power consumption: The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology.


    OCR Scan     		PDF LH531000B 28-pin, 600-m 450-m 44-pin I-------15 600-mil DIP28-P-600) sharp lh53 sharp lh53 1M

    flash 64m

    Abstract: No abstract text available
    Text: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161


    OCR Scan     		PDF 100ns 120ns 150ns 256kj LH53259 LH53517 LH531V00 LH530800A LH531024 LH532048 flash 64m

    sharp mask rom

    Abstract: LH53820 LH5322 lh5384
    Text: SHARP CORP bGE D • 000^435 40 e! f l l f l ü ? » S R P J T - H é - o - jS SHARP LH5316400D ■ M Description The LH5316400D is a 16M bit CMOS mask ROM organized as 2,0 97 ,1 5 2 x8 bits. It is packaged in 36-pin DIP which provides mask ROM specific pinout compatible with 28-pin 1 M mask ROM.


    OCR Scan     		PDF LH5316400D LH5316400D 36-pin 28-pin 150ns LH538400A LH538200 16M-- LH5316400 sharp mask rom LH53820 LH5322 lh5384

    Untitled

    Abstract: No abstract text available
    Text: LH531V00 FEATURES • 131,072 words x 8 bit organization CMOS 1M 128K x 8 MROM PIN CONNECTIONS TOP VIEW 32-PIN DIP 32-PIN SOP • Access time: 100 ns (MAX.) / A16^ 1• 2 \ 32 □ Vcc 31 □ NC A ì5 Z 3 30 □ nc A 12 C 4 29 □ a OE-i/ÔË-i /DC Z • Power consumption:


    OCR Scan     		PDF LH531V00 32-pin, 600-mil 525-mil 32-PIN

    531024

    Abstract: 40-pin EPROM pinout
    Text: LH531024 FEATURES • 65,536 words x 16 bit organization C M O S 1M 64K x 16 MROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW • Access time: 100 ns (MAX.) s NC • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 jiW (MAX.) CË • Static operation


    OCR Scan     		PDF LH531024 40-PIN 40-pin, 600-mil 525-mil 44-pin, 650-mil LH531024 531024 40-pin EPROM pinout

    Untitled

    Abstract: No abstract text available
    Text: PRIORITY CM O S 1M 128K X 8 Mask-Programmable ROM FEATURES • 131,072 words x 8 bit organization • Access time: 150 ns (MAX.) • Low power consumption: Operating: 192.5 mW (MAX.) Standby: 550jiW(MAX.) DESCRIPTION The LH531000B is a mask-programmable ROM


    OCR Scan     		PDF 550jiW 28-pin, 600-mil 450-mil LH531000B 28-PIN

    531000B

    Abstract: 531000
    Text: CMOS 1 M 128K x 8 MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.) • Low power consumption:


    OCR Scan     		PDF 28-pin, 600-mil 450-mil LH531000B 28-PIN 450-rnil LH531000B 531000B 531000

    lh531

    Abstract: LH531000B LH531000BN-S LH531000B-S
    Text: L H ^ I n n O R l v / V * v u v - C ^ CMOS 1M 128K x 8 w _ 3 V-D rive M a sk-P ro g ram m a ble ROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using


    OCR Scan     		PDF LH531000B-S 28-pin, 450-mil LH531000B-S 28-pin LH531000B lh531 LH531000BN-S

    D416C

    Abstract: dsc d-13
    Text: LH5316500A FEATURES • 2 ,0 9 7 ,1 5 2 x 8 bit organization Byte mode 1 ,048,576 x 16 bit organization (Word mode) • • Access time: 150 ns (M AX.) Power consumption: Operating: 2 7 5 m W (M AX.) Standby: 550 jiW (M AX.) • Fully-static operation •


    OCR Scan     		PDF LH5316500A 42-pin, 600-m 44-pin, 48-pin, 42-PIN LH5316500A 600-mil D416C dsc d-13

    sharp mask rom

    Abstract: DIP028-P-0600
    Text: CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization • Access time: 150 ns (MAX.) The LH531000B is a m ask-program mable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology.


    OCR Scan     		PDF 28-PIN LH531000B 28-pin, 600-mil 450-mil LH531000B sharp mask rom DIP028-P-0600

    Untitled

    Abstract: No abstract text available
    Text: L H 5 3 1 B - S CMOS 1M 128K x 8 3 V-Drive MROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Power consumption:


    OCR Scan     		PDF LH531000B-S 28-pin, 450-mil 28-PIN I000B OP028-P-0450)

    431 capacitor NCC

    Abstract: No abstract text available
    Text: LH531000B CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 1 31,072 x 8 bit organization The LH531000B is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (M AX.)


    OCR Scan     		PDF LH531000B LH531000B 28-pin, 600-m 450-m 44-pin, 28-PIN 600-mil 431 capacitor NCC

    Untitled

    Abstract: No abstract text available
    Text: LH531024 FEATURES • 65,536 words x 16 bit organization CMOS 1M 64K x 16 MROM PIN CONNECTIONS 4 0 -P IN D IP T O P V IE W 4 0 -P IN S O P • Access time: 100 ns (MAX.) - S NC C • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 (iW (MAX.)


    OCR Scan     		PDF LH531024 40-pin, 600-mil 525-mil 44-pin, 650-mil