Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F bfiF D • L3b7254 □ lb3 M A X I M U M R ATINGS Sym bol V alu e U n it Colle ctor-E m itte r V oltage v CEO -1 2 Vdc C o llector-B ase V oltag e VCBO -1 2 V dc Em itter-Base V oltag e v EBO - 4 .5 V dc C o lle c to r Current — C o ntinu ou s
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L3b7254
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IC MC14011
Abstract: AD11465 MJE5420Z IC MC14011 application notes IC MC14011 motorola IC TTL 74LS00 mc14011 motorola 74LS00 specifications ic 7401 MJE5420
Text: MOTOROLA SC XSTRS/R F 12E D I L3b7254 0 Gf l5 b4 1 T'43-d5 fl | Order this data sheet by MJE5420Z/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5420Z Advance Information Z-Sw itch Bipolar Pow er Circuit N P N Self-Protected Silicon Pow er Darlington POW ER D A R LIN G T O N
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L3b7254
43-d5
MJE5420Z/D
MJE5420Z
MJE5420Z
MK145BP,
IC MC14011
AD11465
IC MC14011 application notes
IC MC14011 motorola
IC TTL 74LS00
mc14011
motorola 74LS00
specifications ic 7401
MJE5420
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2N6300
Abstract: No abstract text available
Text: M OT OR OL A SC X S TR S /R 1SE D I L3b7254 QQflMSTS 5 I F • 2N6053, 2N6054 2N6298, 2N6299 PNP 2N6055, 2N6056 2N6300, 2N6301 NPN MOTOROLA SEMICONDUCTOR TECHNICAL DATA D ARLIN GTO N COM PLEM EN TARY SILICON POWER TRAN SISTO RS DARLINGTON 8 AM PERE . . . designed for general-purpose amplifier and low frequency switching
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L3b7254
2N6053,
2N6054
2N6298,
2N6299
2N6055,
2N6056
2N6300,
2N6301
2N6300
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BC372
Abstract: bc373 BC373-25 BC373-16 to 92 case BC 372
Text: MOT ORO LA SC 12E D I t3b72SM QGÔSÔ53 1 | X S TR S/R F 7 BC372, -16, -25, -40 BC373, -16, -25 M A X IM U M RATINGS BC 373 U nit 100 80 Vdc 100 80 Vd c Sym bol BC 372 Collector-Emitter Voltage VC E O Collector-Base Voltage VCBO Em itter-Base Voltage R a tin g
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BC370
b3b7E54
BC372,
BC373,
Tj-25C:
BC372
bc373
BC373-25
BC373-16
to 92 case
BC 372
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transistor d 188
Abstract: BD188 bd186 BD186 motorola BD190 3299 transistor
Text: M O T O R O L A SC Î X S T R S / R F> 6367254 MOTOROLA Th SC DT|b3b7ES4 96D <X ST R S/R _.F J 80565 GOflOSbS 4 D MOTOROLA E l SEMICONDUCTOR TECHNICAL DATA PLASTIC M E D IU M POWER SILICO N PNP TRANSISTOR 4 AM PERE POWER TRANSISTOR . . . designed for use in 5 to 10 Watt audio amplifiers utilizing
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier . . . designed specifically for 450 MHz CATV applications. Features ion-im planted arsenic emitter transistors with 7.0 GHz f j and an all gold metallization system. • Specified for 5 3 - and 60-Channel Performance
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60-Channel
MHW5172A
L3b7254
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2N3467
Abstract: 2N3467 MOTOROLA
Text: 2N3467* 2N3468* M A XIM U M RATINGS Symbol 2N3467 2N3468 Unit Emitter-Collector Voltage VCEO -4 0 -5 0 Vdc Collector-Base Voltage VCBO -4 0 -5 0 Vdc Emitter-Base Voltage vebo -5 .0 Vdc Collector Current — Continuous ic -1 .0 Ade Total Device Dissipation @ Ta = 25°C
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2N3467*
2N3468*
2N3467
2N3468
O-205AD)
Juncti30
2N3467
2N3468
L3b7254
2N3467 MOTOROLA
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TMS 3727
Abstract: MRF9511ALT1 sot-23 marking 7z RF9511 Motorola 8039 TMS 3748 MARKING T21 SOT23
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors . . . designed for use in high gain, low noise small-signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.
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MMBR951
MRF951
MRF957
RF9511
OT-23
MMBR951LT1,
MMBR951ALT1,
MRF951
MRF957T10
MRF957T1,
TMS 3727
MRF9511ALT1
sot-23 marking 7z
Motorola 8039
TMS 3748
MARKING T21 SOT23
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MJD47
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD47* MJD50* High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.
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MJD47*
MJD50*
TIP47,
TIP50
b3b7254
MJD47
MJD50
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2N5190 MOTOROLA
Abstract: N5191 2N5190 C 3311 transistor LT 7706 d 317 P 2n transistor Motorola transistors 2N5192
Text: MOTORCLA SC XSTRS/R F T'3Ò 12E D | b3L72SM Q0ÛMS30 5 I 2N5190 MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N5192 SILICON NPN POWER TRANSISTORS 4 AMPERE POWER TRANSISTORS SILICON NPN . . . for use in power amplifier and switching circuits, — excellent safe
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b3L72SM
2N5190
2N5192
2N5193,
2N5194,
2N5195
ZN5190
2NS191
2N5192
2N5190
2N5190 MOTOROLA
N5191
C 3311 transistor
LT 7706
d 317 P 2n transistor
Motorola transistors 2N5192
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mhw612
Abstract: xMDA MHW6122
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 5 5 0 M H z CATV A m p lifie r M H W 6122 . . . designed specifically for 55 0 M H z CA TV applications. Features ion-implanted arsenic emitter transistors with 7.0 GHz f j and an all gold metallization system.
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77-Channel
MHW6122
60-Channel
77-Channei
xmd60
xmd77
CTB60
mhw612
xMDA
MHW6122
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MRF522
Abstract: MRF524 MRFC521 MRF5211 MRF5211L mrfc case 317-01 MRF521 motorola MRF microlab slug tuner SF
Text: 12E D I b3b755M G0Ö7732 M OTOROL A MO TO ROLA SC T | XSTRS/R F S E M IC O N D U C T O R TECHNICAL DATA MRF521 M RFC521 M RF522 M R F524 M R F52 11 ,L The RF Line P N P S ilic o n H ig h -F re q u e n cy T ra n s is to rs . designed primarily for use in the high-gain, low-noise sm all-signal amplifiers for
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ti3ti755M
OT-143
MRF5211)
MRF5211L)
MRF522
MRF524
MRFC521
MRF5211
MRF5211L
mrfc
case 317-01
MRF521
motorola MRF
microlab slug tuner SF
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4229P-LOO-3C8
Abstract: No abstract text available
Text: MOT OR OL A SC 1EE D | b3fe,72S4 QOflSlGS b | XSTRS/R F MOTOROLA M J1 2 0 2 0 TECHNICAL DATA MJ12021 MJ12022 SEMICONDUCTOR De s i g n e r ’ s D a t a She et 5 .0 , 8 .0 and 1 5 A M P E R E NPN SILIC O N DEFLECTION POWER T R A N SISTO R S HIGH PERFORMANCE NPN
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MJ12021
MJ12022
J12020
J12021
J12022
4229P-LOO-3C8
4229P-LOO-3C8
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2n3634
Abstract: 2N3634 MOTOROLA
Text: 2N3634 M A X IM U M RATINGS thru Symbol 2N3634 2N3635 2N3636 2N3637 Unit C o lle c to r-E m itte r V olta g e v CEO -1 4 0 -1 7 5 Vdc C o lle c to r-B a se V o lta g e VCBO -1 4 0 -1 7 5 Vdc Rating E m itte r-B a se V o lta g e - 5 .0 vebo >c - 1 .0 Ade T o ta l D evice D issip a tio n
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2N3634
2N3634
2N3635
2N3636
2N3637
2N3637
O-205AD)
2N3634-35
2N3634 MOTOROLA
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308B
Abstract: BC308 Motorola bc309 bc 307A bc307a BC309 Motorola bc307
Text: MOTOROLA SC XSTRS/R F 12E 0 I t3b7E5i 0043838 S | BC307, A, B, C thru M A X IM U M RATINGS Sym bol R a tin g B C B C BC 307 308 309 BC309, A, B, C U nit Collector-Emltter Voltage VCEO 45 25 25 Vdc Collector-Base Voltage VCBO 50 30 30 Vdc Em itter-Base Voltage
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BC307,
BC309,
BC309
BC307
BC308
L3b7254
308B
BC308 Motorola
bc 307A
bc307a
BC309 Motorola
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MTD4N20
Abstract: MTD4N20-1 369A-10 AN569 TMOS Power FET AN569 in Motorola Power Applications
Text: MO T O RO L A SC CXSTRS/R F bßF: D b3b7254 OGel f l 4 cH S7T MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information P o w e r Field E ffe c t T ra n s is to r N-Channel Enhancem ent-M ode Silicon G ate D PA K fo r S urface M o u n t or Insertion M o u n t
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b3b7254
b3b72S4
MTD4N20
MTD4N20
MTD4N20-1
369A-10
AN569
TMOS Power FET
AN569 in Motorola Power Applications
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