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    2N3637 Price and Stock

    Microchip Technology Inc JANS2N3637

    TRANS PNP 175V 1A TO39
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    DigiKey JANS2N3637 Bulk 418 1
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    Microchip Technology Inc 2N3637UB

    TRANS PNP 175V 1A UB
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    Solid State Inc 2N3637

    TRANS PNP TO39
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    TRANS PNP 175V 1A TO39
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    Microchip Technology Inc 2N3637L

    TRANS PNP 175V 1A TO5
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    2N3637 Datasheets (52)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N3637 Microsemi PNP Silicon Amplifier Transistor Original PDF
    2N3637 Motorola Bipolar Transistor, General Purpose Transistors PNP Silicon - Pol=PNP / Pkg=TO39 / Vceo=175 / Ic=1 / Hfe=100/300 / fT(Hz)=- / Pwr(W)=1 Original PDF
    2N3637 Semelab PNP Silicon Transistor - Pol=PNP / Pkg=TO39 / Vceo=175 / Ic=1 / Hfe=100/300 / fT(Hz)=- / Pwr(W)=1 Original PDF
    2N3637 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N3637 Boca Semiconductor GENERAL PURPOSE TRANSISTOR (PNP SILICON) - Pol=PNP / Pkg=TO39 / Vceo=175 / Ic=1 / Hfe=100/300 / fT(Hz)=- / Pwr(W)=1 Scan PDF
    2N3637 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N3637 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N3637 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3637 Motorola European Master Selection Guide 1986 Scan PDF
    2N3637 Motorola Power Transistor Selection Guide Scan PDF
    2N3637 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3637 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3637 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3637 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3637 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3637 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3637 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3637 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N3637 Unknown Vintage Transistor Datasheets Scan PDF
    2N3637 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N3637 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3025

    Abstract: 2N3026 2N3021 2N3022 2N3023 2N3024
    Text: SOLID STATE DEVICES, INC PNP POWER & HIGH VOLTAGE Device Type 2N2983 2N2984 2N2985 2N2986 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3250 2N3250A 2N3251 2N3251A 2N3467 2N3468 2N3485 2N3485A 2N3486 2N3486A 2N3634 2N3635 2N3636 2N3637 2N3660 2N3661 2N3719 2N3720


    Original     		PDF 2N3779 2N3780 2N3781 2N3789 2N3790 2N3791 2N3025 2N3026 2N3021 2N3022 2N3023 2N3024

    Untitled

    Abstract: No abstract text available
    Text: 2N3637 MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) FEATURES • High Voltage Switching 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x .


    Original     		PDF 2N3637 x10-4 300ms

    2N3637

    Abstract: No abstract text available
    Text: 2N3637 MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTOR 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) FEATURES • High Voltage Switching 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x .


    Original     		PDF 2N3637 100MHz 100kHz x10-4 300ms 2N3637

    2N3635 MOTOROLA

    Abstract: 2N3635 2N3637 2N3634 MOTOROLA
    Text: MOTOROLA Order this document by 2N3635/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N3635 2N3637 PNP Silicon 2 BASE 1 EMITTER 3 Rating Symbol 2N3635 2N3637 Unit Collector – Emitter Voltage VCEO – 140 – 175


    Original     		PDF 2N3635/D 2N3635 2N3637 2N3635/D* 2N3635 MOTOROLA 2N3635 2N3637 2N3634 MOTOROLA

    2N3637 semicoa

    Abstract: 2N3637
    Text: Data Sheet No. 2N3637 Generic Part Number: 2N3637 Type 2N3637 Geometry TBD Polarity PNP Qual Level: Pending REF: MIL-PRF-19500/357 Features: • • • • General-purpose high gain, low power amplifier transistor which operates over a wide temperature range.


    Original     		PDF 2N3637 MIL-PRF-19500/357 MIL-PRF-19500/357 2N3637 semicoa 2N3637

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR RF TRANSISTORS 2N3635 2N3636 2N3637 TO-39 Metal Can Package 2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching and Low Power Amplifier.


    Original     		PDF 2N3635 2N3636 2N3637 2N3635 2N3637 C-120 37Rev260901

    Untitled

    Abstract: No abstract text available
    Text: 2N3637DCSM DUAL PNP SILICON TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) FEATURES 4.32 ± 0.13 (0.170 ± 0.005)


    Original     		PDF 2N3637DCSM MO-041BB) -100V -50mA

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP TRANSISTOR 2N3637 • • • • • General Purpose PNP Silicon Transistor High Voltage, High Speed Saturated Switching Low Power Amplifier Applications Hermetic TO39 Package Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF 2N3637 -175V 71mW/Â O-205AD)

    2n3637

    Abstract: 2N3636 2N3635 2N3634
    Text: TECHNICAL DATA 2N3634, 2N3634L JTX, JTXV 2N3635, 2N3635L JTX, JTXV 2N3636, 2N3636L JTX, JTXV 2N3637, 2N3637L JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/357 PNP SILICON AMPLIFIER TRANSISTORS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage


    Original     		PDF 2N3634, 2N3634L 2N3635, 2N3635L 2N3636, 2N3636L 2N3637, 2N3637L MIL-PRF-19500/357 2n3637 2N3636 2N3635 2N3634

    Untitled

    Abstract: No abstract text available
    Text: 2N3637+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)175 V(BR)CBO (V)175 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N3637 Freq200M

    TRANSISTOR C 3068

    Abstract: 2n3637 data 2N3637
    Text: 2N3637 MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) • High Voltage Switching 12.70 (0.500) min. • Low Power Amplifier Applications 0.89 max. (0.035)


    Original     		PDF 2N3637 O-205AD) -100V -50mA TRANSISTOR C 3068 2n3637 data 2N3637

    2N3637DCSM

    Abstract: No abstract text available
    Text: 2N3637DCSM DUAL PNP SILICON TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) FEATURES 4.32 ± 0.13 (0.170 ± 0.005)


    Original     		PDF 2N3637DCSM MO-041BB) -100V -50mA 2N3637DCSM

    2N3637

    Abstract: No abstract text available
    Text: 2N3637 PNP silicon general purpose transistor 14.04 Transistors Transist. 1 of 2 Home Part Number: 2N3637 Online Store 2N3637 Diodes PNP s ilic o n general purpo se t rans is to r Transistors Enter code INTER3 at


    Original     		PDF 2N3637 com/2n3637 2N3637

    TRANSISTOR C 3068

    Abstract: 2N3637
    Text: 2N3637 MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) • High Voltage Switching 12.70 (0.500) min. • Low Power Amplifier Applications 0.89 max. (0.035)


    Original     		PDF 2N3637 O-205AD) -100V -50mA TRANSISTOR C 3068 2N3637

    2N3634

    Abstract: 2N3635 JAN 2N3637 2N3635
    Text: 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Product Preview Low Power Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C unless otherwise noted


    Original     		PDF 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L MIL-PRF-19500/357 2N3634/L 2N3634 2N3635 JAN 2N3637 2N3635

    2N3637

    Abstract: 2N3634 2N3635 2N3636 2n3637S transistor 2N3 2N3636.37 2N3634-2N3635
    Text: Boca Semiconductor Corp. BSC http://www.bocasemi.com 2N3634 thru 2N3637 M A X I M U M R A T IN G S Symbol 2N3634 2N3635 2N3636 2N3637 C o lle cto r-E m itte r Voltage v CEO -1 4 0 -1 7 5 Vdc Collector-B ase V o ltage VCBO -1 4 0 -1 7 5 Vdc Em itter-Base V o ltage


    OCR Scan     		PDF 2n3634 2n3635 2N3636 2N3637 2N3634 2N3637 O-205AD) -100V 2N3636-37 2N3634-35 2n3637S transistor 2N3 2N3636.37 2N3634-2N3635

    Untitled

    Abstract: No abstract text available
    Text: 2 N 3634 THRU 2N3637 HIGH VOLTAGE PNP SILICON TRANSISTORS GEOMETRY 400 • JAN. JAN-TX. JAN-TXV Available TJgTTVSTTage— to 175 • Sw itching and A m plifier A pplications MAXIMUM RATINGS S ym bol * * in g C o O c lo r E m ilia« V o i» « » wc e o vc»


    OCR Scan     		PDF 2N3637 2H3634

    2N1132A

    Abstract: 2N3495 2N5415 2n1132a transistor 2N3494 2N2800 2N4033 2N2904 2N2905 2N3467
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PN P TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637 2N3743


    OCR Scan     		PDF O-5/TO205AD/TO-39 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3495 2n1132a transistor 2N3494 2N4033 2N3467

    2N4033

    Abstract: 2N3494 2N5415
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V cE O Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637


    OCR Scan     		PDF O-5/TO205AD/TO-39 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N4033 2N3494

    Untitled

    Abstract: No abstract text available
    Text: 2N3634 thru 2N3637 M A X IM U M RATINGS Symbol 2N3634 2N3635 2N3636 2N3637 C o lle c to r -E m itte r V o lta g e v CEO -1 4 0 -1 7 5 V dc C o lle c to r-B a s e V o lta g e v CBO - 140 -1 7 5 Vdc E m itte r-B a s e V o lta g e vebo Rating 5.0 Unit A de C o lle c to r C u rre n t — C o n tin u o u s


    OCR Scan     		PDF 2N3634 2N3635 2N3636 2N3637 O-205AD)

    Untitled

    Abstract: No abstract text available
    Text: Maximum Ratings No. 2N2S04 V Mm 60 ^CEO ^ao Pd •M (V) (W) Min Min 9Tc=25"c 40 0.6 (A) 0.6 u (A) lCBO ü*A) e (V) Max 0.02 ttS (mA) Max ^CE • 00 ^FE Min 2N2905 2N2905A 2N3072 2N3073 2N35Q2 2N3503 2N3635 2N3S36 2N3637 2N4030 60 60 60 60 60 45 60 140 175


    OCR Scan     		PDF 2N2S04 2N2904A BFX38 BFX40 BFX41 BFX87 BFX88 CK100 CK150

    Untitled

    Abstract: No abstract text available
    Text: TYPES 2N3634 THRU 2N3637 P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L -S 7 3 1 1 9 3 4 , J U N E 1 9 7 3 H IG H -V O LT A G E TRAN SISTO RS FOR G EN ER A L PURPOSE A M P L IF IE R A N D SW ITCH IN G APPLICATIO N S • High V B R C EO . . . 140 V (2N 3634, 2N 3635) or 175 V (2N 3636, 2N 3637)


    OCR Scan     		PDF 2N3634 2N3637

    2n3634

    Abstract: 2N3634 MOTOROLA
    Text: 2N3634 M A X IM U M RATINGS thru Symbol 2N3634 2N3635 2N3636 2N3637 Unit C o lle c to r-E m itte r V olta g e v CEO -1 4 0 -1 7 5 Vdc C o lle c to r-B a se V o lta g e VCBO -1 4 0 -1 7 5 Vdc Rating E m itte r-B a se V o lta g e - 5 .0 vebo >c - 1 .0 Ade T o ta l D evice D issip a tio n


    OCR Scan     		PDF 2N3634 2N3634 2N3635 2N3636 2N3637 2N3637 O-205AD) 2N3634-35 2N3634 MOTOROLA

    2N3834

    Abstract: id9e
    Text: T É L E » Y NE COMPO NENTS" Û T l T b ü a O Q Q b S a ? t. aöE D 2N3634 THRU 2N3637 HIGH VOLTAGE PNP SILICON TRANSISTORS O GEOMETRY 480 • JAN, JAN-TX, JAN-TXV Available • High Voltage— to 175 V. VCE0 • Switching and Amplifier Applications MAXIMUM RATINGS


    OCR Scan     		PDF 2N3634 2N3637 2N3635 2N3636 20ttSEC 00V-------- 100VTURN-ON 2N3834 id9e