Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC M2E J> H T^mMS Q O l Q ^ b fi HS tlC K - KM69B257 p R E U M iN A R Y BiCMOS SRAM 3 2 K X 9 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Times —Commercial: 10ns, 12ns, 15ns, 20ns —5ns & 6ns Output Enable times
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OCR Scan
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KM69B257
195mA,
175mA,
155mA,
130mA
32-pin
KM69B257
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PDF
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LM 739 N
Abstract: No abstract text available
Text: PRELIMINARY KM69B257 BiCMOS SRAM 3 2 K X 9 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Times — Com mercial: 10ns, 12ns, 15ns, 20ns — 5ns & 6ns Output Enable tim es • Low Power Dissipation — Standby: 20mA — O perating: 195m A, 175m A, 155m A, 130mA
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OCR Scan
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KM69B257
130mA
69B257
LM 739 N
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM69B257A BiCMOS SRAM 32,768 WORD x 9 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CMOS): 20mA (max.) Operating KM69B257AJ-8: 185mA (max.)
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OCR Scan
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KM69B257A
KM69B257AJ-8:
185mA
KM69B257AJ-10:
175mA
KM69B257AJ-12:
165mA
KM69B257AJ:
32-pin
KM69B257A
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PDF
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20L08
Abstract: No abstract text available
Text: KM69B257A BiCMOS SRAM 32,768 WORD x 9 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 9 , 1 0 , 12ns Max. • Low Power Dissipation Standby (TTL) : 110mA (max.) (CMOS): 20mA (max.) Operating KM 69B257AJ-8:185m A (Max.)
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OCR Scan
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KM69B257A
110mA
69B257AJ-8
KM69B257A
185mA
KM69B257AJ-10:
175mA
KM69B257AJ-12:
165mA
KM69B257AJ:
20L08
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PDF
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SOJ 44
Abstract: 1MX1 KM6865
Text: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001
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OCR Scan
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KM6465B/BL
KM6466B/BL
KM6865B/BL
KM64258B
KM64258C
KM64V258C
KM64B258A
KM64B261A
KM68257B/BL
KM68257C/CL
SOJ 44
1MX1
KM6865
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM69B257 BiCMOS SRAM 32 K X 9 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Timas —Commercial: 10ns, 12ns, 15ns, 20ns —5ns & 6ns Output Enable times • Low Power Dissipation —Standby: 20mA —Operating: 195mA, 175mA, 155mA, 130mA
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OCR Scan
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KM69B257
195mA,
175mA,
155mA,
130mA
KM69B257
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PDF
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Untitled
Abstract: No abstract text available
Text: SA MS UN G E L E C T R O N I C S INC b?E » • 7 T b 4 1 4 2 D L 1 7 bl b 1ÔS KM69B257A BiCMOS SRAM 32,768 WORD x 9 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8 , 9 , 1 0 , 12ns Max. • Low Power Dissipation Standby (TTL) : 110mA (max.)
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OCR Scan
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KM69B257A
110mA
69B257AJ-8
KM69B
257AJ-9
KM69B257AJ-10
175mA
69B257AJ-12
KM69B257AJ:
32-pin
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PDF
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KM424C256Z
Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J
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OCR Scan
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KM4164BP
KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM424C256Z
SIMM 30-pin
30-pin SIMM RAM
KM44C256bp
KM41C1000BJ
257J
KM44C256BZ
1K x4 static ram
30-pin simm memory "16m x 8"
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PDF
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41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page
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OCR Scan
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41C256
41C257
41C258
41C464
41C466
41C1000
41C1002
44C256
44C258
41C4000
TC55B8128
424170 NEC
CY70199
44C1000
IOT7164
HN62308BP
HN62404P
TC5116100
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PDF
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TC55B8128
Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6
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OCR Scan
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TC511001
TC514101
514170B
514280B
TC5316200P
KM2X16100
KM23C16000G
KM23C16100G
KM23C16000FP
KM23C16100FP
TC55B8128
KM23C4000AG
TC534000AF
HN62308BP
TC551632
hitachi cross
mb83
68512U
HITACHI 64k DRAM
TC55B4256
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PDF
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KM28C64A
Abstract: No abstract text available
Text: TABLE OF COm-ENTS FUNCTION GUIDE 1. 2. 3. 4. Introduction. 11 Product G uide. 19
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OCR Scan
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KM75C03A.
KM75C101A.
KM75C102A.
KM75C103A.
KM75C104A.
KM28C64A
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PDF
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KM424C256Z
Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100
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OCR Scan
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KM41C256P
KM41C255J
KM41C258Z
KM41C257P
KM41C257J
KM41C257Z
KM41C25BP
KM41C258J
KM41C464P
KM424C256Z
KM41C464
PB20
KM64258
KM68512
KMM5362000
KM23C2
64k 30-pin SIMM
KM23C4000A
KM41C4000BJ
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PDF
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KM68512
Abstract: 12BKX8 km6865b
Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs
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OCR Scan
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010/J/T
KM68512
12BKX8
km6865b
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PDF
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KMM591000AN
Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC
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OCR Scan
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KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM41C464P
KMM591000AN
KM424C256Z
KMM591000B
KM41C464
KMM584000B
4Mx1 nibble
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PDF
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AG10
Abstract: km416c256 1m maskrom KM68B1002-10
Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM sg SA M SU N G Electronics 11 MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 — KM41C4000ASL-7 — KM41C4000ASL-8 - KM41C4000ASL-10
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OCR Scan
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KM41C4000A-7
KM41C4000A-8
KM41C4000A-10
KM41C4000AL-7
KM41C4000AL-8
KM41C4000AL-10
KM41C4000ASL-7
KM41C4000ASL-8
KM41C4000ASL-10
KM41C4001A-7
AG10
km416c256
1m maskrom
KM68B1002-10
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PDF
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