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    KM4164BP Search Results

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    KM424C256Z

    Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J


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    PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"

    KM41C1000BJ

    Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page


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    PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C1000BJ KM44C256BP KM41C1000BP KM41C1001BP KM44C256BJ km4164 KM44C1000LJ KM41C464Z

    KM4164B-12

    Abstract: samsung hv capacitor KM4164B-10 NMOS DRAM KM4164B-15 KM4164B KM4164BP KM4164 Samsung Tantalum Capacitor TCP KM4164B10
    Text: KM4164B NMOS DRAM 6 4 K x 1 Bit Dynamic RAM with Page Mode FEATURES GENERAL DESCRIPTION • Performance range The KM4164B is a fully decoded NMOS Dynamic Ran­ dom A ccess M em ory organized as 65,536 one-bit words. The design is op tim ized fo r high speed, high pe rfor­


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    PDF KM4164B KM4164B-10 100ns 190ns KM4164B-12 120ns 220ns KM4164B-15 150ns 260ns samsung hv capacitor NMOS DRAM KM4164B KM4164BP KM4164 Samsung Tantalum Capacitor TCP KM4164B10

    "speech synthesis" parcor

    Abstract: "speech synthesis" lpc
    Text: SPEECH SYNTHESIZER SPEECH SYNTHESIZER DEVICES Many different approaches have been used for syn­ thesizing speech signals. Generally, all these methods employ some form of pattern matching. At first, the input utterances are filtered and digitized. The extracts


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    PDF KS5911 "speech synthesis" parcor "speech synthesis" lpc

    NMOS DRAM

    Abstract: KM4164BP KM4164 km4164b
    Text: KM4164B NMOS DRAM 64K x 1 Bit Dynamic RAM with Page Mode FEATURES GENERAL DESCRIPTION • Performance range The KM4164B is a fully decoded NMOS Dynamic Ran­ dom Access Memory organized as 65,536 one-bit words. The design is optimized for high speed, high perfor­


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    PDF KM4164B KM4164B-10 KM4164B-12 KM4164B-15 100ns 120ns 150ns 190ns 220ns 260ns NMOS DRAM KM4164BP KM4164 km4164b