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    KM64258B Search Results

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    KM64258B Price and Stock

    Samsung Semiconductor KM64258BJ-15

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    Bristol Electronics KM64258BJ-15 8
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    Samsung Semiconductor KM64258BJ-25

    STANDARD SRAM, 64KX4, 25NS, CMOS, PDSO28
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    Quest Components KM64258BJ-25 7
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    KM64258B Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM64258B-15 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM64258B-20 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM64258B-25 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF

    KM64258B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: KM64258B CMOS SRAM 6 4 KX 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • • T h e K M 6 4 2 5 8 B is a 2 6 2 , 1 4 4 - b it h ig h -s p e e d S ta tic R an­ F a s t A c c e s s T im e : 15, 2 0 , 2 5 n s (m ax .) Lo w P o w er D is sip a tio n


    OCR Scan     		KM64258B 300mil) 004max PDF

    KM64258BP-15

    Abstract: KM64258BP/J-25 KM64258
    Text: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 GD17Sbb AST ■ SP1GK KM64258B CMOS SRAM 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40mA (max.)


    OCR Scan     		GD17Sbb KM64258B KM64258BP/J-15: 140mA KM64258BP/J-20: 130mA KM64258BP/J-25: 120mA KM64258BP: 28-pin KM64258BP-15 KM64258BP/J-25 KM64258 PDF

    SOJ 44

    Abstract: 1MX1 KM6865
    Text: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001


    OCR Scan     		KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL SOJ 44 1MX1 KM6865 PDF

    KM64258BJ-20

    Abstract: KM64258BJ-15
    Text: CMOS SRAM KM64258B 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS): 2mA (max) Operating KM64257BP/J-15: 140m A (max.)


    OCR Scan     		KM64258B KM64257BP/J-15: KM64257BP/J-20: KM64257BP/J-25: KM64258BP: 28-pin KM64258BJ: KM64258BJ-20 KM64258BJ-15 PDF

    KM64258BJ-15

    Abstract: KM64258BJ-20 KM64258BP-15
    Text: KM64258B CMOS SRAM 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS): 2m A (max) Operating KM64258B-15: 140mA (max.) KM64258B -20: 130mA (max.)


    OCR Scan     		KM64258B KM64258B-15: 140mA KM64258B 130mA 120mA KM64258BP: 28-DIP-300 KM64258BJ: KM64258BJ-15 KM64258BJ-20 KM64258BP-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM KM64258B 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS): 2mA (max) Operating KM64257BP/J-15: 140mA (max.)


    OCR Scan     		KM64258B KM64257BP/J-15: 140mA KM64257BP/J-20: 130mA KM64257BP/J-25: 120mA KM64258BP: 28-pin KM64258BJ: PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM64258B 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast A ccess Time: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS): 2m A (max) Operating KM64258B-15: 140mA (max.) KM64258B-20: 130mA (max.)


    OCR Scan     		KM64258B KM64258B-15: 140mA KM64258B-20: 130mA 64258B 120mA KM64258BP: 28-DIP-300 KM64258BJ: PDF

    KM64258BP-15

    Abstract: KM64258BJ-20 KM64258BJ-15 KM64258
    Text: PRELIMINARY KM64258B CMOS SRAM 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS): 2mA (max) Operating KM64257BP)J-15: 140mA (max.)


    OCR Scan     		KM64258B KM64257BP 140mA KM64257BP/J-20: 130mA KM64257BP/J-25: 120mA KM64258BP: 28-pin KM64258BJ: KM64258BP-15 KM64258BJ-20 KM64258BJ-15 KM64258 PDF

    HM6709AJP-20

    Abstract: HM6709SHJP-10 KM64258B-25 KM64259B-15 KMB4259B-20 KMB4259B-25 Hitachi Scans-001
    Text: 2 5 6 K B iC M O S X m £ a £ CC TAAC max ns) TCAC max (ns) 4 -y TOE max (ns) TOH min (ns) * y TOD max (ns) S t a t i c ? TWP min (ns) ft RAM (65, & TDS 536x4) m "ns) TDH min (ns) TWD min (ns) TWH max (ns) V D D or V C C (V) 2 8 P I N X m I DP max (mA)


    OCR Scan     		536x4) 28PIN IM709AJP-15 HM6709AJP-20 HMB709AJP-25 M5M5259B-35 M5M5259B-20L H5M5259B-25L M5M5259B-35L MCMB209C-15 HM6709SHJP-10 KM64258B-25 KM64259B-15 KMB4259B-20 KMB4259B-25 Hitachi Scans-001 PDF

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan     		KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464 PDF

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100 PDF

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


    OCR Scan     		416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256 PDF

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


    OCR Scan     		TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256 PDF

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL PDF

    KM68512

    Abstract: 12BKX8 km6865b
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs


    OCR Scan     		010/J/T KM68512 12BKX8 km6865b PDF

    R0310

    Abstract: 64KX4 samsung CMOS SRAM 28-pin SOJ SRAM
    Text: I SAMSUNG ELECTRONICS INC b?E D m 7Tbm42 KM 64258B 00175fc.b Ö2T SI1GK CM OS SRAM 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Tim e: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40m A (m ax.)


    OCR Scan     		KM64258B 7Tbm42 D017Sfc 64KX4 KM642S8BP/J-15: 140mA KM64258BP/J-20: 130mA KM64258BP/J-25: 120mA R0310 samsung CMOS SRAM 28-pin SOJ SRAM PDF