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    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E ]> n 7^4142 KM23C2100 0011124 ? ESSM6K CMOS MASK ROM 2M-BH 256K x 8/128K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itch ab le organization Byte M ode: 262,144 x 8 ROM T h e K M 23C 2100 is a fully s tatic m as k program m able


    OCR Scan     		PDF KM23C2100 8/128K 150ns 2100F

    Untitled

    Abstract: No abstract text available
    Text: CMOS MASK ROM KM23C256 G 256KBit (32Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • KM23C2S& 28-pfci IMP (Polarity pnQnnNM bli cMp a m U i pin M d output enable pin) • KM23C2S6Q: 32-pin SOP (Polarity programmable cMp enable pin and output enable pin)


    OCR Scan     		PDF KM23C256 256KBit 32Kx8) KM23C2S& 28-pfci KM23C2S6Q: 32-pin 120ns 100pA

    KM23C2001

    Abstract: mask rom mask rom 2m 23C2001
    Text: KM23C2001 G CMOS MASK ROM 2M-Bit (256K x 8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • • • • • • • • 262,144 x 8 bit organization Fast access time: 150ns (max.) Supply voltage: single + SV Current consumption Operating: 50mA (max.) Fully static operation


    OCR Scan     		PDF KM23C2001 150ns 32-pin, 144x8 KM23C200KG) KM23C2001G) mask rom mask rom 2m 23C2001

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM23C2100H CMOS MASK ROM 2M-Bit 256K x 8/128K x 16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES • Switchable organization Byte Mode: 262,144 x 8 Word Mode: 131,072 x 16 • Fast access lime: 100ns (max.) • Supply voltage: single + 5V • Current consumption


    OCR Scan     		PDF KM23C2100H 8/128K 100ns 40-pin 44-pin KM23C2100H KM23C2100H) KM23C2100HFP)

    INTEL86

    Abstract: No abstract text available
    Text: KM23C256 CMOS MASK ROM 256K-BH 32K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • KM23C256: 28-pin DIP (Polarity programmable chip enable pin and output enable pin) • KM23C256G: 32-pin SOP (Polarity programmable chip enable pin and output enable pin)


    OCR Scan     		PDF KM23C256 256K-BH KM23C256: 28-pin KM23C256G: 32-pin 120ns 100nA KM23C256 768x8 INTEL86

    KM23C2100

    Abstract: No abstract text available
    Text: KM23C2100 CMOS MASK ROM 2M-BÌX 256KX 8/128Kx 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization Byte Mods: 262,144 x 8 Word Mode: 131,072 x 16 • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption


    OCR Scan     		PDF KM23C2100 256KX 8/128Kx 150ns 100/iA 40-pln KM23C2100 100pF KM23C2100-15 KM23C2100-20

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 ODlbTbb Sbb KM23C2001 G CMOS MASK ROM 2M-Bit (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2001 is a fully static mask programmable ROM organized 262,144x8 bit. It is fabricated using


    OCR Scan     		PDF KM23C2001 144x8 150ns 32-pin, 525mil, KM23C200KG) KM23C2001) KM23C2001G)

    Untitled

    Abstract: No abstract text available
    Text: b7E SAMSUNG ELECTRONICS INC 7^4142 O O l b W D 536 CMOS MASK ROM KM23C256 G 256K-Bit (32Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • KM23C2S& 28-pin DIP (PotarHy programmable chip enable pin and output enable pin) • KM23C256G: 32-pin SOP (Polarity programmable chip enable pin and


    OCR Scan     		PDF KM23C256 256K-Bit 32Kx8) KM23C2S& 28-pin KM23C256G: 32-pin 768x8 120ns 100pA

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 OOlb'iSñ 4TT KM23C2000 G CMOS MASK ROM 2M-Bit (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2000 is a fully static mask programmable ROM organized 262,144x8 bit. It is fabricated using


    OCR Scan     		PDF KM23C2000 144x8 150ns 32-pin KM23C200CKG) KM23C2000) KM23C2000G)

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM23C2001H CMOS MASK ROM 2M-Bit 256K x 8 CMOS MASK ROM FEATURES • • • • • • • • 262,144 x 8 bit organization Fast access time: 100ns (max.) Supply voltage: single + SV Current consumption Operating: 40mA (max.) Fully static operation


    OCR Scan     		PDF KM23C2001H 100ns 32-pin, KM23C2001H KM23C2001H-12 KM23C2001H-15 KM23C2001H)

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS MASK ROM KM23C2000H 2M-BH 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2000H is a fu lly s ta tic m ask program m able ROM organized 2 6 2 ,1 4 4 x 8 b it It is fabricated using silicon-gate CMOS process tech nolog y


    OCR Scan     		PDF KM23C2000H 100ns 50/iA 32-pin KM23C2000H KM23C2000H)

    KM23C2000

    Abstract: No abstract text available
    Text: KM23C2000 CMOS MASK ROM 2M-Bit 256K x 8 CMOS MASK ROM FEATURES • • • • • • • • • 262,144 x 8 bit organization Fast access time: 150ns (max.) Supply voltage: single + 5V Current consumption Operating: 40mA (max.) Standby: 10(VA (max.) Fully static operation


    OCR Scan     		PDF KM23C2000 150ns 32-pin KM23C2000) KM23C2000G) KM23C2000

    Untitled

    Abstract: No abstract text available
    Text: CMOS MASK ROM KM23C2000 2M-Bit 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2000 is a fu lly sta tic m ask program m able ROM organized 2 6 2 ,1 4 4 x 8 bit. It is fabricated using silicon-gate CMOS process technology. •


    OCR Scan     		PDF KM23C2000 KM23C2000 150ns 100//A 32-pin KM23C2000) KM23C2000G)

    AX301

    Abstract: No abstract text available
    Text: KM23C256 CMOS MASK ROM 256K-Bit 32K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • K M 23C 256: 28-pin DIP (P olarity prog ram m able c hip enable pin and o u tp u t ena b le pin) • K M 23C 256G : 32-pin SO P (P olarity prog ram m able c h ip e n a b le pin and


    OCR Scan     		PDF KM23C256 256K-Bit 28-pin 32-pin 120ns 100/iA AX301

    23C2001

    Abstract: No abstract text available
    Text: CMOS MASK ROM KM23C2001 2M-Bit 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 262,144 x 8 bit organization The K M 2 3 C 2 0 0 1 is a fu lly s ta tic m ask p ro g ra m m a b le R OM o rg a n iz e d 2 6 2 ,1 4 4 x 8 b it It is fa b ric a te d u s in g


    OCR Scan     		PDF KM23C2001 150ns 100pF KM23C2001-15 KM23C2001-20 KM23C2001-25 23C2001 23C2001

    KM23C2000A

    Abstract: No abstract text available
    Text: KM23C200QA G CMOS MASK ROM 2M-Bit (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2000A is a fu lly s ta tic m ask program m able ROM organized 2 6 2 ,1 4 4 x 8 bit. It Is fabricated using silico n -g a te CMOS process tech nolog y.


    OCR Scan     		PDF KM23C200QA 100ns 32-pin KM23C2000A 100pF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM23C2000H CMOS MASK ROM 2M-Bit 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2000H is a fu lly s ta tic m ask program m able ROM organized 2 6 2 ,1 4 4 x 8 bit. It is fabricated using silicon -gate CMOS process technology.


    OCR Scan     		PDF KM23C2000H KM23C2000H 100ns 32-pin KM23C2000H) KM23C2000HG)

    Untitled

    Abstract: No abstract text available
    Text: CMOS MASK ROM KM23C2001 2M-Bit 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M 2 3 C 2 0 0 1 is a fully static mask programmable ROM organized 2 6 2 ,1 4 4 x 8 bit. It is fabricated using silicon-gate CMOS process te ch n o lc


    OCR Scan     		PDF KM23C2001 150ns 32-pin, KM23C2001-15 KM23C2001-25 KM23C2001-20

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b?E D 7^4145 DQlb'i74 b32 SP1GK CMOS MASK ROM KM23C2100 2M-Bit 256K x 8/128K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 262,144 x 8 Word Mode: 131,072x16 • Fast access time: 150ns (max.)


    OCR Scan     		PDF KM23C2100 8/128K 072x16 150ns 40-pin KM23C2100 KM23C2100)

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS MASK ROM KM23C2100H 2M-Bit 256K x 8/128K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 262,144 x 8 Word Mode: 1 3 1 ,0 7 2 x 1 6 • Fast access time: 100ns (max.) • Supply voltage: single + 5V


    OCR Scan     		PDF KM23C2100H 8/128K 100ns 40-pin 44-pin KM23C2100H KM23C2100H) KM23C2100HFP)

    23C2001

    Abstract: 50-8S-G
    Text: CMOS MASK ROM KM23C2001 2M-BH 256K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M 2 3 C 2 0 0 1 is a fully static mask programmable ROM organized 2 6 2 ,1 4 4 x 8 bit. It is fabricated using silicon-gate CMOS process technology. •


    OCR Scan     		PDF KM23C2001 200ns 32-pin, KM23C2001-20 KM23C2001-25 23C2001 50-8S-G

    Untitled

    Abstract: No abstract text available
    Text: KM23G2000 G CMOS MASK ROM 2M-BH (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2000 is a fully static mask programmable ROM organized 262,144x8 bit. It is fabricated using silicon-gate CMOS process technology. • • • •


    OCR Scan     		PDF KM23G2000 144x8 150ns 32-pln 32-pin KM23C2000 KM23C2000G-20 KM23C2000G-25

    KM23C2100FP

    Abstract: No abstract text available
    Text: KM23C2100 CMOS MASK ROM 2M-Bit 256Kx8/128Kx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 262,144 x 8 Word Mode: 131,072 x 16 • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption


    OCR Scan     		PDF KM23C2100 256Kx8/128Kx16) 150ns 100/iA 40-pin 44-pin KM23C2100 KM23C2100) KM23C2100FP) KM23C2100FP

    23c2100

    Abstract: No abstract text available
    Text: KM23C2100 CMOS MASK ROM 2M-Bit 256K x 8/128K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchabie organization Byte Mode: 262,144 x 8 Word Mode: 131,072 x 16 • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption


    OCR Scan     		PDF KM23C2100 8/128K 150ns 40-pin 44-pin KM23C2100 KM23C2100) KM23C2100FP) 23c2100