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    KM68B261A Search Results

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    KM68B261A Price and Stock

    Samsung Semiconductor KM68B261AJ-7

    32KX8 STANDARD SRAM, 7NS, PDSO32
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM68B261AJ-7 4,000
    • 1 $4.5
    • 10 $4.5
    • 100 $4.5
    • 1000 $4.5
    • 10000 $1.575
    		Buy Now

    Samsung Semiconductor KM68B261AJ-8

    IC,SRAM,32KX8,BICMOS-TTL,SOJ,32PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM68B261AJ-8 624
    • 1 $11
    • 10 $11
    • 100 $11
    • 1000 $5.94
    • 10000 $5.94
    		Buy Now

    SEC KM68B261AJ8

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA KM68B261AJ8 2,208
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    KM68B261A Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM68B261A-6 Samsung Electronics 32K x 8 Bit High-Speed BiCMOS Static RAM Original PDF
    KM68B261A-7 Samsung Electronics 32K x 8 Bit High-Speed BiCMOS Static RAM Original PDF
    KM68B261A-8 Samsung Electronics 32K x 8 Bit High-Speed BiCMOS Static RAM Original PDF
    KM68B261AJ-6 Samsung Electronics 32K x 8-Bit High Speed BiCMOS Static RAM Scan PDF
    KM68B261AJ-7 Samsung Electronics 32K x 8-Bit High Speed BiCMOS Static RAM Scan PDF
    KM68B261AJ-8 Samsung Electronics 32K x 8-Bit High Speed BiCMOS Static RAM Scan PDF

    KM68B261A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Bicmos Processes

    Abstract: KM68B261A-6 KM68B261AJ 32-SOJ-300
    Text: KM68B261A BiCMOS SRAM 32K x 8 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6,7,8ns Max. • Low Power Dissipation Standby (TTL) : 110 mA(Max.) (CMOS) : 20 mA(Max.) Operating Current : 170 mA(f=100MHz) • Single 5V ± 5% Power Supply


    Original     		KM68B261A 100MHz) KM68B261AJ 32-SOJ-300 KM68B261A 144-bit October-1994 Bicmos Processes KM68B261A-6 KM68B261AJ 32-SOJ-300 PDF

    KM68B261A-6

    Abstract: KM68B261A-7 KM68B261A-8 Static Random Access Memory
    Text: KM68B261A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns Max. • Low Power Dissipation Standby (TT L): 110 mA (Max.) (CMO S): 20 mA (Max.) Operating Current: 170 mA (f=100MHz) • Single 5V±5%T>ower Supply


    OCR Scan     		KM68B261A 32Kx8 100MHz) KM68B261AJ SOJ-300 KM68B261A 144-bit 0D237Sb KM68B261A-6 KM68B261A-7 KM68B261A-8 Static Random Access Memory PDF

    KM68B261A-6

    Abstract: KM68B261A-7 KM68B261A-8
    Text: SAMSUNG ELECTRONICS INC b?E D • 7*^4142 □□175^4 7 C]4 SUGK PRELIMINARY KM68B261A BiCMOS SRAM 32,768 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6 , 7, 8 ns max. • Low Power Dissipation Standby (TTL)


    OCR Scan     		KM68B261A 7Tb4142 170mA KM68B261A 144-bit 0017t 300mil) KM68B261A-6 KM68B261A-7 KM68B261A-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b?E D • 7 T b 4 1 4 2 0 0 1 7 5 ^ 4 7^4 PRELIMINARY KM68B261A BiCMOS SRAM 32,768 WORD X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL)


    OCR Scan     		KM68B261A 170mA KM68B261A 144-bit 300mil) PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E T> 7 *îb4 m s 0P17S1S bSO • SMGK PRELIMINARY BiCMOS SRAM KM68B261A ABSOLUTE MAXIMUM RATINGS* Item Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to VSs Power Dissipation Storage Temperature Operating Temperature


    OCR Scan     		0P17S1S KM68B261A D2957, APRIL1993 bl723 0DT42H5 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM68B261A BiCMOS SRAM 32,768 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CMOS): 20mA (max.) • Operating Current : 170mA (1 = 100 MHz.)


    OCR Scan     		KM68B261A 170mA KM68B261A 144-bit 300mil) PDF

    Untitled

    Abstract: No abstract text available
    Text: KM68B261A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns Max. • Low Power Dissipation Standby (TTL) : 110 mA (Max.) (CMOS) : 20 mA (Max.) Operating C urrent: 170 mA (f= 100MHz) • Single S V iS ^ il^ o w e r S upply


    OCR Scan     		KM68B261A 32Kx8 100MHz) KM68B261AJ SOJ-300 KM68B261A 144-bit PDF

    KM688

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM68B261A 32,768 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CMOS): 20mA (max.) • Operating Current : 170mA (f = 100 MHz.)


    OCR Scan     		KM68B261A 170mA 32-SOJ-3QO KM68B261A 144-bit KM688261A usi68B261A 200mV KM688 PDF

    KM68B261A-6

    Abstract: KM68B261A-7 KM68B261A-8
    Text: KM68B261A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns Max. • Low Power Dissipation Standby (TTL) : 110 mA (Max.) (CMOS) : 20 mA (Max.) Operating Current: 170 mA (f=100MHz) • Single 5V±5% Power Supply


    OCR Scan     		KM68B261A 32Kx8 100MHz) KM6BB261AJ 32-SOJ-300 KM68B261A 144-bit 00E15T7 KM68B261A-6 KM68B261A-7 KM68B261A-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM68B261A 32,768 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CMOS): 20mA (max.) • Operating Current : 170mA (f = 100 MHz.)


    OCR Scan     		KM68B261A 170mA 32-SOJ-3QO KM68B261A 144-bit ib4142 0Q1B441 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM68B261A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns Max. • Low Power Dissipation Standby (TTL) : 110 mA (Max.) (CMOS) : 20 mA (Max.) Operating Current: 170 mA (f=100MHz) • Single 5V±5% Power Supply


    OCR Scan     		KM68B261A 32Kx8 100MHz) KM68B261AJ SOJ-300 KM68B261A 144-bit PDF

    SOJ 44

    Abstract: 1MX1 KM6865
    Text: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001


    OCR Scan     		KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL SOJ 44 1MX1 KM6865 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM68B261A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 6, 7, 8 ns Max. • Low Power Dissipation Standby (T T L ): 110 mA (Max.) (C M O S ): 20 m A (Max.) Operating C u rre n t: 170 mA (f=100MHz) • S ingle 5V±5%T>ower Supply


    OCR Scan     		KM68B261A 32Kx8 100MHz) KM68B261AJ SQJ-300 KM68B261A 144-bit 2372b PDF

    KM68B261A-6

    Abstract: KM68B261A-7 KM68B261A-8
    Text: BiCMOS SRAM KM68B261A 32,768 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CMOS): 20mA (max.) • Operating Current : 170mA (f = 100 MHz.)


    OCR Scan     		KM68B261A 170mA 32-SOJ-300 KM68B261A 144-bit 200mV KM68B261A-6 KM68B261A-7 KM68B261A-8 PDF

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5


    OCR Scan     		KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000 PDF

    KM616V4002A

    Abstract: 6161002 ER255 KM732V589
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Guide. 11 2. Ordering Inform ation. 15


    OCR Scan     		KM62256C 128Kx KM68512A KM681000B KM681000C2 KM718B90 KM718BV87AT KM732V588 KM732V589/L. KM716V689 KM616V4002A 6161002 ER255 KM732V589 PDF

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL PDF

    KM616U1000BL-L

    Abstract: No abstract text available
    Text: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI


    OCR Scan     		KM62256CL KM62256CL-L KM62256CLE KM62256CLE-L KM62256CLI KM62256CLI-L 28-TSOP 28-DIP 28-SOP KM68512CL KM616U1000BL-L PDF

    KM68512

    Abstract: 12BKX8 km6865b
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs


    OCR Scan     		010/J/T KM68512 12BKX8 km6865b PDF

    al 232 nec

    Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
    Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258


    OCR Scan     		KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference PDF