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    Samsung Semiconductor KM681000BLG-7

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    Bristol Electronics KM681000BLG-7 476 1
    • 1 $9.408
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    Quest Components KM681000BLG-7 91
    • 1 $12.6
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    KM681000BLG-7 24
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    KM681000BLG-7 132
    • 1 $13.89
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    KM681000BLG-7 25
    • 1 $13.89
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    Samsung Semiconductor KM681000BLP-7

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    Samsung Semiconductor KM681000BLG-7L

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    Quest Components KM681000BLG-7L 216
    • 1 $7.86
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    KM681000BLG-7L 2,223
    • 1 $11.25
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    KM681000BLG-7L 8
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    Samsung Semiconductor KM681000BLG-5

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    Bristol Electronics KM681000BLG-5 33
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    Quest Components KM681000BLG-5 98
    • 1 $3.33
    • 10 $2.22
    • 100 $1.665
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    KM681000BLG-5 26
    • 1 $4.56
    • 10 $3.344
    • 100 $3.04
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    KM681000BLG-5 2,851
    • 1 $3.33
    • 10 $3.33
    • 100 $3.33
    • 1000 $1.8315
    • 10000 $1.665
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    Samsung Semiconductor KM681000BLGI-7L

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    KM681000B Datasheets (86)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM681000B Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000B Family Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000BL Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000BLE Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000BLE-L Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000BLG-5 Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000BLG-5 Samsung Electronics 128K x 8 bit CMOS static RAM, 55ns, low power Original PDF
    KM681000BLG-5 Samsung Electronics 128K x 8 bit Low Power CMOS Static RAM Scan PDF
    KM681000BLG-5L Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000BLG-5L Samsung Electronics 128K x 8 bit CMOS static RAM, 55ns, low low power Original PDF
    KM681000BLG-5L Samsung Electronics 128K x 8 bit Low Power CMOS Static RAM Scan PDF
    KM681000BLG-7 Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000BLG-7 Samsung Electronics 128K x 8 bit CMOS static RAM, 70ns, low power Original PDF
    KM681000BLG-7 Samsung Electronics 128K x 8 bit Low Power CMOS Static RAM Scan PDF
    KM681000BLG-7L Samsung Electronics 128K x8 bit Low Power CMOS Static RAM Original PDF
    KM681000BLG-7L Samsung Electronics 128K x 8 bit CMOS static RAM, 70ns, low low power Original PDF
    KM681000BLG-7L Samsung Electronics 128K x 8 bit Low Power CMOS Static RAM Scan PDF
    KM681000BLGE-10 Samsung Electronics 128K x 8 bit CMOS static RAM, 100ns, low power Original PDF
    KM681000BLGE-10L Samsung Electronics 128K x 8 bit CMOS static RAM, 100ns, low low power Original PDF
    KM681000BLGE-7 Samsung Electronics 128K x 8 bit CMOS static RAM, 70ns, low power Original PDF

    KM681000B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM681000BLG-7L

    Abstract: KM681000BLP-7L KM681000BLT-5 KM681000B KM681000BL KM681000BLE KM681000BLE-L KM681000BLI KM681000BL-L
    Text: PRELIMINARY CMOS SRAM KM681000B Family 128K x8 bit Low Power CMOS Static RAM FEATURES ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü GENERAL DESCRIPTION Process Technology : 0.6§- CMOS Organization : 128Kx8 Power Supply Voltage : Single 5.0V ¡¾ 10% Low Data Retention Voltage : 2V Min


    Original     		PDF KM681000B 128Kx8 32-DIP, 32-SOP, 32-TSOP 0820R) KM681000BLG-7L KM681000BLP-7L KM681000BLT-5 KM681000BL KM681000BLE KM681000BLE-L KM681000BLI KM681000BL-L

    KM681000B

    Abstract: KM681000BL KM681000BLE KM681000BLE-L KM681000BLI KM681000BL-L
    Text: KM681000B Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft for commercial product - Commercial Product only October 28, 1992 Preliminary 0.1 - Initial draft for Extended/Industrial Product


    Original     		PDF KM681000B 0820R) KM681000BL KM681000BLE KM681000BLE-L KM681000BLI KM681000BL-L

    equivalent ic to PAL 007 E MOSFET

    Abstract: mini Audio transformer 200k to 1k ct input LM35 sensor and NPN transistor based automatic fan controller 8051 elevator control interfacing zener diodes color coded cathode LS414B AT8958252-24PC melf zener diodes color code atmel 89s8252 sample code 89S8252 equivalent
    Text: INDEX Order Code Description Manufacturer 789-719 789-707 792-731 792-561 704-453 704-441 792-160 791-787 790-722 703-722 703-710 597-351 597-363 597-375 941-864 705-263 663-773 705-275 704-957 786-809 786-810 786-822 795-410 505-031 792-962 793-061 793-358


    Original     		PDF CLC408AJE: CLC408AJP: CLC436AJP: CLC533AJP: HDSP-4850 HDSP-4832 HDSP-4836 HLCP-J100 HLMP-2598 HLMP-2599 equivalent ic to PAL 007 E MOSFET mini Audio transformer 200k to 1k ct input LM35 sensor and NPN transistor based automatic fan controller 8051 elevator control interfacing zener diodes color coded cathode LS414B AT8958252-24PC melf zener diodes color code atmel 89s8252 sample code 89S8252 equivalent

    KS32C6100

    Abstract: XD10-XD26 1n414b 29ee512 0xc02c CON26x2 ldr 6k DA10 DA11 CDM14
    Text: 21-32-6100-0598 USER'S MANUAL KS32C6100 32-Bit RISC Microcontroller Revision 1 Important Notice The information in this publication has been carefully checked and is believed to be accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or omissions, or for any


    Original     		PDF KS32C6100 32-Bit KS32C6100 XD10-XD26 1n414b 29ee512 0xc02c CON26x2 ldr 6k DA10 DA11 CDM14

    TAA 310A

    Abstract: KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000B KM681000BL KM681000BLE KM681000BL-L
    Text: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 um CMOS • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible


    OCR Scan     		PDF KM681000B 128Kx8 0023b3? KM681OOOÃ 0D23b3Ã TAA 310A KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000BL KM681000BLE KM681000BL-L

    68 1103

    Abstract: KM681000BL A14F
    Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced


    OCR Scan     		PDF KM681000BL 128Kx8 385mW KM681OOOBLP/BLP-L 600mil) KM681000BLG/BLG-L: 525mil) KM681OOOBLT/BLT-L 0820F) KM681000BLR/BLR-L: 68 1103 A14F

    Untitled

    Abstract: No abstract text available
    Text: KM681000BLE / BLE-L CMOS SRAM 128Kx8 Bit Extended Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power Dissipation Standby (CM O S): 550nW(Max.)L-Ver.


    OCR Scan     		PDF KM681000BLE 128Kx8 550nW 275pW 385mW KM681000BLGE/BLGE-L 32-pin 525mil) KM681000BLTE/BLTE-L

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550(iW (max.) L Version 110fiW (max.) U- Version Operating : 385mW(max.) • Single 5V±10% Power Supply


    OCR Scan     		PDF KM681000BL 128Kx8 110fiW 385mW KM681OQOBLP/BLP-L 600mil) KM681000BLG/BLG-L: 525mil) KM681000BLT/BLT-L 0820F)

    Untitled

    Abstract: No abstract text available
    Text: KM681000B Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft for com m ercial product - Com mercial Product only O ctober 28th, 1992 Prelim inary 0.1 - Initial draft for Extended/Industrial Product


    OCR Scan     		PDF KM681000B 0820F) 0820R)

    Untitled

    Abstract: No abstract text available
    Text: KM681000BL/BL-L CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION Pin Nam e ? —? p ÒÒ OOp OOcolt Pin Function A 0 -A 16 Address Inputs We Write Enable input CS1, CS2 Chip Seet Input ÔE 1/01-1/08 uuuuyuyuyuuuyuuu PIN CONFIGURATION Top Views


    OCR Scan     		PDF KM681000BL/BL-L KM681000BL7BL-L 576-bit KM681000BL/BL-L KM681000B1VBL-L 20/iA D10Eb4

    Untitled

    Abstract: No abstract text available
    Text: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 urn CMOS • Organization: 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage: 2V Min • Three state output and TTL Compatible


    OCR Scan     		PDF KM681000B 128Kx8 KM681000BL4 0023b3? KM681 0G53b3Ã

    KM681000BLE

    Abstract: No abstract text available
    Text: CMOS SRAM KM681000BLE / BLE-L 128Kx8 B it Extended Temperature Range Operating SRAM GENERAL DESCRIPTION FEATURES • E x te n d e d T e m p e ra tu r e R a n g e : -2 5 to 85°C T h e K M 6 8 1 0 0 0 B L E /B L E -L is a 1 ,0 4 8 ,5 7 6 -b it h ig h -s p e e d


    OCR Scan     		PDF KM681000BLE 128Kx8 550nW 385mW KM681000BLGE/BLGE-L 32-pin 525mil) KM681000BLTE/BLTE-L KM681000BLRE/BLRE-L

    Untitled

    Abstract: No abstract text available
    Text: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 urn CMOS The KM681000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 128K x 8


    OCR Scan     		PDF KM681000B 128Kx8

    681000BLP-7L

    Abstract: 681000BLP B8100 KM681000BI 681000BLG
    Text: KM681000B Family CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES G EN ER A L DESCRIPTION • Process Technology: 0.6nm C M O S • Organization: 128Kx8 • Power Supply Voltaga: Single 5.0V±10 % • Low Date Retention Voltage : 2V Mln • Three state output and TTL Compatible


    OCR Scan     		PDF KM681000B 128Kx8 32-DIP-600 32-SOP-525 32-TSQP1-0820F/R 681000BLP-7L 681000BLP B8100 KM681000BI 681000BLG

    Untitled

    Abstract: No abstract text available
    Text: KM681000BLI/BLI-L CMOS SRAM 128Kx8 Bit Industrial Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Tem perature Range : -40 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power D issipation Standby (CMOS) : 550^W (Max.)L-Ver.


    OCR Scan     		PDF KM681000BLI/BLI-L 128Kx8 385mW KM681000BLGI/BLGI-L 32pin 525mil) 681000BLTI/BLTI-L 0820F) KM681000BLRI/BLRI-L

    A13CH

    Abstract: km6810008 A12CZ KM681000BLI km6810008l
    Text: CMOS SRAM KM681000BLI / BLI-L 128Kx8 Bit Industrial Temperature Range Operating SRAM GENERAL DESCRIPTION FEATURES • Industrial Tem perature R ange : -40 to 8 5°C • Fast Access Tim e : 7 0 ,1 0 0 ns M ax. • Low Pow er Dissipation Standby (C M O S ) : 5 5 0 pW (M ax.)L -V er.


    OCR Scan     		PDF KM681000BLI 128Kx8 550pW 385mW KM681000BLGI/BLG 32pin 525mil) KM681000BLTI/BLTI-L 0820F) A13CH km6810008 A12CZ km6810008l

    KM681000BLP-7L

    Abstract: KM681000B KM681000BL
    Text: KM681000B Family CMOS SRAM D o cu m en t Title 128K x8 bit Low Power CMOS Static RAM R é visio n H is to ry Revision No. History Draft Data Rem ark 0 .0 Initial d ra ft fo r c o m m e rc ia l p ro d u c t - C o m m e rc ia l P ro d u c t o n ly O c to b e r 28 th, 1992


    OCR Scan     		PDF KM681000B 100ns 0820F) 0820R) KM681000BLP-7L KM681000BL

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC L.7E D • 7 ^ 4 1 4 2 0017S12 bSR «SMf iK ADVANCE INFORMATION KM681000BL/KM681OOOB L-L CMOS SRAM 131,072 WORD X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 55, 70, 85, 100ns max. • Low Power Dissipation


    OCR Scan     		PDF 0017S12 KM681000BL/KM681OOOB 100ns KM681000BLP/BLP-L KM681000BLG/BLG-L: KM681000BLT/BLT KM681000BLR/BLR-L: KM681000BL/BL-L

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION KM681000BL/KM681000BL-L CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 55, 70, 85, 100ns max. • Low Power Dissipation Standby (CMOS): 10^W(typ.) L-Version 5/jW(typ.) LL-Version Operating


    OCR Scan     		PDF KM681000BL/KM681000BL-L 100ns KM681000BLP/BLPL KM681000BLG/BLG-L: KM681000BLT/BLT-L KM681000BLR/BLR-L: KM681000BL/BL-L 576-bit Random00BL/BL-L

    Untitled

    Abstract: No abstract text available
    Text: KM681OOOBLI/BLI-L CMOS SRAM 131,072 W O RD x 8 Bit C M O S Static RAM<mdustnai Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns max.) • Low Power Dissipation Standby (CMOS) : 550;<W(max.)


    OCR Scan     		PDF KM681OOOBLI/BLI-L 100ns 110mW KM681000BLGI/BLG-L 32-SOP-525 KM681000BLTI/BLTI-L 32-TSOP1-0820F KM681000BLRI/BLRI-L 32-TSOP1-0820R KM681000BLI/BLI-L

    Untitled

    Abstract: No abstract text available
    Text: CM O S SRAM KM681OOOBLI/BLI-L 1 3 1 ,0 7 2 W O fíD X 8 B it C M O S S ts tic R A M industriai Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns(max.) • Low Power Dissipation


    OCR Scan     		PDF KM681OOOBLI/BLI-L 100ns 110mW KM681000BLGI/BLG-L 32-SOP-525 KM681000BLTI/BLTI-L 32-TSOP1-0820F KM681000BLRI/BLRI-L 32-TSOP1-0820R KM681000BLI/BLI-L

    KM736V789T-60

    Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
    Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L


    OCR Scan     		PDF 256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000