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    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E T> 7 *îb4 m s 0P17S1S bSO • SMGK PRELIMINARY BiCMOS SRAM KM68B261A ABSOLUTE MAXIMUM RATINGS* Item Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to VSs Power Dissipation Storage Temperature Operating Temperature


    OCR Scan     		PDF 0P17S1S KM68B261A D2957, APRIL1993 bl723 0DT42H5

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b?E D • 7 T b 4 1 4 2 0 0 1 7 5 ^ 4 7^4 PRELIMINARY KM68B261A BiCMOS SRAM 32,768 WORD X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL)


    OCR Scan     		PDF KM68B261A 170mA KM68B261A 144-bit 300mil)