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    Samsung Semiconductor KM6884002J-15

    6884002J-15
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    Samsung Semiconductor KM688B1002J-15

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    KM688 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM688100LR-10L Samsung Electronics 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM688100LR-7L Samsung Electronics 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM688100LRI-10L Samsung Electronics 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM688100LRI-7L Samsung Electronics 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM688100LT-10L Samsung Electronics 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM688100LT-7L Samsung Electronics 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM688100LTI-10L Samsung Electronics 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM688100LTI-7L Samsung Electronics 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Original PDF

    KM688 Datasheets Context Search

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    cmos static ram 1mx8 5v

    Abstract: KM688100LR-10L KM688100LR-7L KM688100LT-10L KM688100LT-7L 1Mx8 bit Low Power CMOS Static RAM
    Text: Preliminary KM688100 Family CMOS SRAM Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 Initial draft - Dual CS Draft Date Remark June 22, 1999 Advance The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF KM688100 cmos static ram 1mx8 5v KM688100LR-10L KM688100LR-7L KM688100LT-10L KM688100LT-7L 1Mx8 bit Low Power CMOS Static RAM

    KM688

    Abstract: No abstract text available
    Text: BiCMOS SRAM KM68B261A 32,768 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CMOS): 20mA (max.) • Operating Current : 170mA (f = 100 MHz.)


    OCR Scan     		PDF KM68B261A 170mA 32-SOJ-3QO KM68B261A 144-bit KM688261A usi68B261A 200mV KM688

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM68B65A BiCMOS SRAM BiCMOS 8K X 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Time —Commercial: 10ns, 12ns, 15ns • Low Power Dissipation —Standby: 20mA —Operating: 150mA, 130mA, 110mA • Single 5V±10% Power Supply


    OCR Scan     		PDF KM68B65A 150mA, 130mA, 110mA KM68B65A 536-bit KM68865A

    68B10

    Abstract: KM688 KM68B1002-8
    Text: KM68B1002 BiCMOS SRAM 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8, 9, 1 0 ,1 2 ,15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS): 10mA (Max.) Operating K M 68B1002J-8:175m A (Max.)


    OCR Scan     		PDF KM68B1002 68B1002J-8 68B1002J-9 68B1002J-10 68B1002J-12 68B1002J-15 KM68B1002J 32-SOJ-400 576-bit 68B10 KM688 KM68B1002-8

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC h? E D • 7^4142 KM68B1002 OD17b^l I bb BiCMOS SRAM 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8 ,9 ,1 0 ,1 2 ,15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)


    OCR Scan     		PDF KM68B1002 OD17b KM68B1002J-8 175mA KM68B1002J-9 KM68B1002J-10 165mA KM68B1002J-12 155mA