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    KM611001 Search Results

    KM611001 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM611001 Samsung Electronics 1M x 1-Bit High-Speed CMOS SRAM Original PDF
    KM611001-20 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM611001-20J Samsung Electronics 1M x 1-Bit High-Speed CMOS Static RAM Original PDF
    KM611001-20P Samsung Electronics 1M x 1-Bit High-Speed CMOS Static RAM Original PDF
    KM611001-25 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM611001-25J Samsung Electronics 1M x 1-Bit High-Speed CMOS Static RAM Original PDF
    KM611001-25P Samsung Electronics 1M x 1-Bit High-Speed CMOS Static RAM Original PDF
    KM611001-35 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM611001-35J Samsung Electronics 1M x 1-Bit High-Speed CMOS Static RAM Original PDF
    KM611001-35P Samsung Electronics 1M x 1-Bit High-Speed CMOS Static RAM Original PDF
    KM611001L Samsung Electronics 1M x 1-Bit High-Speed CMOS SRAM Original PDF

    KM611001 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: KM611001/L CMOS SRAM 1M x 1Bit High-Speed CMOS SRAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 2 mA(Max.) 0.5 mA(Max.) - L-ver. Operating KM611001/L -20 : 130 mA(Max.)


    Original     		PDF KM611001/L KM611001/L KM611001P/LP 28-DIP-400 KM611001J/LJ 28-SOJ-400A 576-bit

    KM611001J

    Abstract: KM611001 KM611001-20 KM611001-25 KM611001-35
    Text: KM611001 CMOS SRAM 1M x lB it High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 20,25,35 ns Max. The KM611001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 1.048,576 words by 1 bits. • Low Power Dissipation


    OCR Scan     		PDF KM611001 KM611001-20 KM611001 KM611001-35 KM611001P: 28-D1P-400 KM611001J: 28-SOJ-4QO 576-bit KM611001J KM611001-20 KM611001-25 KM611001-35

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM611001 1,048,576 WORD x 1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 2 0 ,2 5 ,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 100/i A (max.) L-ver. only 2mA (max.) Operating KM611001-20 :130m A (max.)


    OCR Scan     		PDF KM611001 100/i KM611001-20 KM611001-25 KM611001-35 611001P/LP KM611001J/LJ

    VE27

    Abstract: No abstract text available
    Text: KM611001 CMOS SRAM 1M X 1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS) : 2mA (max.! O perating KM 611001P/J-20: 130m A (max) K M 611001P/J-25: 110m A (max)


    OCR Scan     		PDF KM611001 611001P/J-20: 611001P/J-25: 611001P/J-35: KM611001P: 28-pin KM611001J: 400mil) VE27

    KM611001

    Abstract: KM611001-20 KM611001-25 KM611001-35 A2326
    Text: CM OS SRAM KM611001 1,048,576 WORD x 1 B it High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 20, 2 5 ,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 100//A (max.) L-ver. only 2mA (max.) Operating KM611001-20 :130m A (max.)


    OCR Scan     		PDF KM611001 35ris 100//A KM611001-20 130mA KM611001-25 110mA KM611001-35 100mA KM611001P/LP KM611001 KM611001-20 KM611001-25 KM611001-35 A2326

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D WË 7 T b 4 m 2 D017bm KM611001 330 • SnGK CMOS SRAM 1MX1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.)


    OCR Scan     		PDF D017bm KM611001 KM611001P/J-20: 130mA KM611001P/J-25: 110mA KM611001P/J-35: 100mA KM611001P: 28-pin

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM611001 1 MX 1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.) Operating KM611001P/J-20: 130mA (max) KM611001P/J-25: 110mA (max)


    OCR Scan     		PDF KM611001 KM611001P/J-20: 130mA KM611001P/J-25: 110mA KM611001P/J-35: 100mA KM611001P: 28-pin 400mil)

    SOJ 44

    Abstract: 1MX1 KM6865
    Text: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001


    OCR Scan     		PDF KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL SOJ 44 1MX1 KM6865

    Untitled

    Abstract: No abstract text available
    Text: KM611001/L CMOS SRAM 1M X 1Bit High-Speed CMOS SRAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns Max. • Low Power Dissipation Standby (TTL) : 40mA(Max.) (CMOS): 2mA(Max.) 0.5 mA(Max.) - L-ver. Operating KM611001/L-20:130 mA(Max.) KM611001/L-25:110 mA(Max.)


    OCR Scan     		PDF KM611001/L KM611001/L-20 KM611001/L-25 KM611001/L-3 100mA KM611001P/LP: 28-DIP-400 KM611001J/LJ: 28-SQJ-400A KM611001/L

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM611001 1M X 1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS) : 2m A (max.) Operating KM611001P/J-20: 130m A (max) KM611001P/J-25: 110m A (max)


    OCR Scan     		PDF KM611001 KM611001P/J-20: KM611001P/J-25: KM611001P/J-35: KM611001P: 28-pin 611001J:

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM611001 1,048,576 WORD x 1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 20, 25, 35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 100/t A (max.) L-ver. only 2mA (max.) Operating KM 611001 -20 : 130mA (max.)


    OCR Scan     		PDF KM611001 100/t 130mA KM611001-25 KM611001-35 KM611001P/LP KM611001J/LJ 28-pin 400mil)

    KM611001

    Abstract: KM611001-20 KM611001-25 KM611001-35
    Text: SAMSUNG ELECTRONICS INC b?E D m T'ìbMmE 0017b41 3 30 • CMOS SRAM KM611001 1 MX 1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.)


    OCR Scan     		PDF KM611001 0017b41 KM611001P/J-20: 130mA KM611001P/J-25: 110mA KM611001P/J-35: 100mA KM611001P: 28-pin KM611001 KM611001-20 KM611001-25 KM611001-35

    Untitled

    Abstract: No abstract text available
    Text: KM611001 CMOS SRAM 1M x1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. (CMOS): 2 mA(Max.) Operating KM611001-20 : 130 mA(Max.) The KM611001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 1.048,576 words


    OCR Scan     		PDF KM611001 KM611001-20 KM611001 576-bit KM611001-35

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM611001 1M X 1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e 20,25,35ns max. • Low Power Dissipation S tandby (TTL) : 40m A (m ax.) (CMOS) : 2mA (max.) Operating KM611001P/J-20: 130m A (max) KM611001P/J-25: 110m A (max)


    OCR Scan     		PDF KM611001 KM611001P/J-20: KM611001P/J-25: KM611001P/J-35: KM611001P: 28-pin KM611001J: 576-bit

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000

    KM424C256Z

    Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J


    OCR Scan     		PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


    OCR Scan     		PDF 416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


    OCR Scan     		PDF TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL

    KM28C64A

    Abstract: No abstract text available
    Text: TABLE OF COm-ENTS FUNCTION GUIDE 1. 2. 3. 4. Introduction. 11 Product G uide. 19


    OCR Scan     		PDF KM75C03A. KM75C101A. KM75C102A. KM75C103A. KM75C104A. KM28C64A

    KM424C256Z

    Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100


    OCR Scan     		PDF KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ

    KM68512

    Abstract: 12BKX8 km6865b
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs


    OCR Scan     		PDF 010/J/T KM68512 12BKX8 km6865b

    MK-110

    Abstract: CY7C107-25 CY7C107-35 CY7C107-45 DPM41027L-20 DPM41027L-25 DPM41027L-35 DPM41027L-45 DPM41027S-20 DPM41027S-25
    Text: - 142IM I m % tt £ íaaaeea °C CMOS A 1 TAAC max (ns) TCAC max (ns) TOE max (ns) + TOH sin (ns) S t a t i c V TOD max (ns) '/ TiP rain (ns) ft R A M ( 1 , 0 4 8, 5 7 6 x 1 ) m ft TDS min (ns) TDH (ns) T'WD min (ns) TWR max (ns) V D D or V C C (V) 28P I N


    OCR Scan     		PDF 576X1) CY7C107-25 CY7C107-35 CY7C107-45 MCM6227A-45 MT5C1001-25 MT5C1001-35 MT5CIO01-45 UPD431D01LE-25 UPD431001LE-35 MK-110 DPM41027L-20 DPM41027L-25 DPM41027L-35 DPM41027L-45 DPM41027S-20 DPM41027S-25