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    Samsung Semiconductor KM416V1200AT-L6TQ

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    Bristol Electronics KM416V1200AT-L6TQ 480 1
    • 1 $6.72
    • 10 $4.368
    • 100 $2.9118
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    Quest Components KM416V1200AT-L6TQ 384
    • 1 $9
    • 10 $9
    • 100 $4.2
    • 1000 $3.9
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    Samsung Semiconductor KM416V1200CT6

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    Bristol Electronics KM416V1200CT6 476
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    Samsung Semiconductor KM416V1200BT-L6

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    Bristol Electronics KM416V1200BT-L6 300
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    Samsung Semiconductor KM416V1200AT-L6

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    Bristol Electronics KM416V1200AT-L6 115
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    Quest Components KM416V1200AT-L6 92
    • 1 $7.164
    • 10 $3.582
    • 100 $3.3432
    • 1000 $3.3432
    • 10000 $3.3432
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    KM416V1200AT-L6 12
    • 1 $5.97
    • 10 $2.985
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    KM416V1200 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416V1200B Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416V1200BJ-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Original PDF
    KM416V1200BJ-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Original PDF
    KM416V1200BJ-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Original PDF
    KM416V1200BJL-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Original PDF
    KM416V1200BJL-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Original PDF
    KM416V1200BJL-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Original PDF
    KM416V1200BT-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Original PDF
    KM416V1200BT-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Original PDF
    KM416V1200BT-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Original PDF
    KM416V1200BTL-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Original PDF
    KM416V1200BTL-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Original PDF
    KM416V1200BTL-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Original PDF
    KM416V1200C Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416V1200CJ-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Original PDF
    KM416V1200CJ-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Original PDF
    KM416V1200CJ-6 Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416V1200CJ-L-5 Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416V1200CJL-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Original PDF
    KM416V1200CJL-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Original PDF

    KM416V1200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    km416c1200

    Abstract: KM416C1000C KM416C1200C KM416V1000C KM416V1200C
    Text: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This


    Original     		PDF KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 16Bit 1Mx16 1200C 400mil km416c1200 KM416C1000C KM416C1200C KM416V1000C KM416V1200C

    C1000B

    Abstract: KM416C1000B KM416C1200B KM416V1000B KM416V1200B C-1000B C1200B
    Text: KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5,-6 or -7), power


    Original     		PDF KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 16Bit 1Mx16 C1000B KM416C1000B KM416C1200B KM416V1000B KM416V1200B C-1000B C1200B

    KM416C1000C

    Abstract: km416c1200 KM416V1200 KM416C1200C KM416V1000C KM416V1200C
    Text: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This


    Original     		PDF KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 16Bit 1Mx16 1200C 400mil KM416C1000C km416c1200 KM416V1200 KM416C1200C KM416V1000C KM416V1200C

    KM416C1000C

    Abstract: KM416C1200C KM416V1000C KM416V1200C
    Text: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This


    Original     		PDF KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 16Bit 1Mx16 1200C 400mil KM416C1000C KM416C1200C KM416V1000C KM416V1200C

    Untitled

    Abstract: No abstract text available
    Text: KMM332V204BT-L KMM332V224BT-L DRAM MODULE KMM332V204BT-L & KMM332V224BT-L with Fast Page Mode 2M x 32 DRAM SODIMM, using1MX16, 4K & 1K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V20 2 4BT is a 2M x 32 bits Dynamic RAM high density memory module. The Samsung


    Original     		PDF KMM332V204BT-L KMM332V224BT-L KMM332V224BT-L using1MX16, KMM332V20 1Mx16bits 44-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-ll) are optional features of this family. All of this family have CASbefore-RAS refresh, ftAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in t-version. This


    OCR Scan     		PDF KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 16Bit 1Mx16 64ms/16ms

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B Preliminary CMOS DRAM 1Mx16 Bi t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CM O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 1Mx16 DG23333

    Untitled

    Abstract: No abstract text available
    Text: KM416V1200BJ CMOS D R A M ELECTRONICS 1 M x 1 6 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416V1200BJ 1Mx16 416V1200BJ) 003072D 3D721

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This


    OCR Scan     		PDF KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 16Bit 1Mx16

    Untitled

    Abstract: No abstract text available
    Text: KM416V1200A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION T h e S a m sun g K M 4 16 V 1 2 00 A /A -IV A -F is a C M O S high • Performance range: sp e e d 1 ,0 4 8 ,5 7 6 b it x 16 D yn a m ic R a n d o m A c c e s s


    OCR Scan     		PDF KM416V1200A/A-L/A-F KM416V1200A-6/A-L6/A-F6 110ns KM416V1200A-7/A-L7/A-F7 130ns KM416V1200A-8/A-L8/A-F8 150ns Tb4142 42-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KM416V1200BT CMOS DRAM ELECTR O NICS 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416V1200BT 1Mx16Bit 1Mx16 band-w25 5CK44 -TSOP2-400R

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A 16Bit 1Mx16 7Tb4142 GG23317

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fa m ily of 1,048,576 x16 bit Fast Page M ode CM OS DRAMs. Fast Page M ode offers high speed random acce ss of m em ory ce lls w ithin the sam e row. Pow er su pply vo lta g e + 5 .0 V o r + 3.3V , refresh


    OCR Scan     		PDF KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A 16Bit 1Mx16

    km416v1200at

    Abstract: KM416V1200aj KM416V1200A
    Text: KM416V1200A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416V1200A/A-L/A-F is a CMOS high speed 1,048,576 b it x 16 Dynamic Random Access Memory. Its design is optimized for high performance


    OCR Scan     		PDF KM416V1200A/A-L/A-F KM416V1200A/A-L/A-F 42-LEAD 44-LEAD km416v1200at KM416V1200aj KM416V1200A

    C-1000B

    Abstract: No abstract text available
    Text: KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B Preliminary CMOS DRAM 1 Mx16 Bi t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 1Mx16 C-1000B

    C1000B

    Abstract: 3020C
    Text: KM416C1000BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000BT 16Bit 1Mx16 7Tb4142 DD3D23b C1000B 3020C

    Untitled

    Abstract: No abstract text available
    Text: KM416V1000BJ CMOS D RA M ELECTRONICS 1 Mx 1 6 B i t CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416V1000BJ 1Mx16 40SOJ

    Untitled

    Abstract: No abstract text available
    Text: KM 4 1 6 C 1 2 0 0 B T CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF DQ0-DQ15 00303bS KM416C1200BT Tb4142 KM416C1200BT)

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KM M 372V 125AJ 1M x72 D R A M KMM372V125AJ Fast Page M ode D IM M w ith Q C A S , 1 K R e fr e s h , GENERAL DESCRIPTION 3 .3 V FEATURES • Performance Range: The Sam sung K M M 372V 125A is a 1M bit x 72 D ynam ic RAM high density m em ory module. The


    OCR Scan     		PDF 125AJ KMM372V125AJ KMM372V125A x16bit 110ns 130ns 300mil 48pin 168-pin

    VG264265B

    Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
    Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D


    OCR Scan     		PDF 256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference

    4MB DRAM

    Abstract: 4MX16 1MX16
    Text: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .


    OCR Scan     		PDF KM41C4000D/KM41V4000D. KM44C1000D/KM44V1000D. KM44C1003D -KM44C1004D/KM44V1004D. KM44C1005D -KM48C512D/KM48V512D. KM48C512D 4MB DRAM 4MX16 1MX16

    KM44C4000aS 6

    Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6


    OCR Scan     		PDF KM41C4000C-5 KM41C4000CL-5 KM41C4002C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000CL-7 KM41C4002C-7 KM41V4000C-7 KM41V4000CL-7 KM41C4000C-8 KM44C4000aS 6 KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL

    Untitled

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23


    OCR Scan     		PDF KM41C1000D KM44C256D. KM41C4000C KM41V4000C.

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000A, KM416C1200A KM416V1 OPPA, KM416V12PPA CMOS DRAM 1M x 16Bit CM O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000A, KM416C1200A KM416V1 KM416V12PPA 16Bit 1Mx16 DQ8DQ15