Untitled
Abstract: No abstract text available
Text: DRAM MODULE KM M 372V 125AJ 1M x72 D R A M KMM372V125AJ Fast Page M ode D IM M w ith Q C A S , 1 K R e fr e s h , GENERAL DESCRIPTION 3 .3 V FEATURES • Performance Range: The Sam sung K M M 372V 125A is a 1M bit x 72 D ynam ic RAM high density m em ory module. The
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125AJ
KMM372V125AJ
KMM372V125A
x16bit
110ns
130ns
300mil
48pin
168-pin
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KM M372V225A J KMM372V225AJ Fast Page Mode 2Mx72 DRAM DIMM with QCAS, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KM M 372V225A is a 2M bit x 72 D ynam ic RAM high density m em ory module. The KMM372V225A - 6
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M372V225A
KMM372V225AJ
2Mx72
372V225A
KMM372V225A
Mx16bit
400mil
110ns
130ns
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Untitled
Abstract: No abstract text available
Text: KM416V1200A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION T h e S a m sun g K M 4 16 V 1 2 00 A /A -IV A -F is a C M O S high • Performance range: sp e e d 1 ,0 4 8 ,5 7 6 b it x 16 D yn a m ic R a n d o m A c c e s s
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KM416V1200A/A-L/A-F
KM416V1200A-6/A-L6/A-F6
110ns
KM416V1200A-7/A-L7/A-F7
130ns
KM416V1200A-8/A-L8/A-F8
150ns
Tb4142
42-LEAD
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km416v1200at
Abstract: KM416V1200aj KM416V1200A
Text: KM416V1200A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416V1200A/A-L/A-F is a CMOS high speed 1,048,576 b it x 16 Dynamic Random Access Memory. Its design is optimized for high performance
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KM416V1200A/A-L/A-F
KM416V1200A/A-L/A-F
42-LEAD
44-LEAD
km416v1200at
KM416V1200aj
KM416V1200A
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