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    Samsung Semiconductor KM416V1204CTL5

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    Bristol Electronics KM416V1204CTL5 1,000
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    Samsung Semiconductor KM416V1200AT-L6TQ

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    Bristol Electronics KM416V1200AT-L6TQ 480 1
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    Quest Components KM416V1200AT-L6TQ 384
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    Samsung Semiconductor KM416V1200CT6

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    Samsung Semiconductor KM416V1204BT-L6

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    Samsung Semiconductor KM416V1200BT-L6

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    KM416V1 Datasheets (177)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM416V1000B Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416V1000BJ-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Original PDF
    KM416V1000BJ-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Original PDF
    KM416V1000BJ-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Original PDF
    KM416V1000BJL-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Original PDF
    KM416V1000BJL-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Original PDF
    KM416V1000BJL-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Original PDF
    KM416V1000BT-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Original PDF
    KM416V1000BT-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Original PDF
    KM416V1000BT-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Original PDF
    KM416V1000BTL-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Original PDF
    KM416V1000BTL-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Original PDF
    KM416V1000BTL-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Original PDF
    KM416V1000C Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416V1000CJ-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Original PDF
    KM416V1000CJ-5 Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416V1000CJ-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Original PDF
    KM416V1000CJ-6 Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416V1000CJ-L-5 Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416V1000CJL-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Original PDF
    ...

    KM416V1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    km416c1200

    Abstract: KM416C1000C KM416C1200C KM416V1000C KM416V1200C
    Text: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This


    Original     		PDF KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 16Bit 1Mx16 1200C 400mil km416c1200 KM416C1000C KM416C1200C KM416V1000C KM416V1200C

    Untitled

    Abstract: No abstract text available
    Text: KM416V1000BJ CMOS D RA M ELECTRONICS 1 Mx 1 6 B i t CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416V1000BJ 1Mx16 40SOJ

    Untitled

    Abstract: No abstract text available
    Text: KM416V1004BJ CMOS DRAM ELECTR ONICS 1M x16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416V1004BJ x16Bit 1Mx16 30bSS 40SOJ 7Rb4142 Q030b5t>

    4h4 1

    Abstract: cmos dram 71FC
    Text: KM416V1004A/A-L/A-F CMOS DRAM 1 M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: KM416V1004A-6/A-L6/A-F6 tRAC tCAC tRC tHPC 60ns 17ns 110ns 24ns KM416V1004A-7/A-L7/A-F7 70ns 20ns 130ns 29ns KM416V1004A-8/A-L8/A-F8


    OCR Scan     		PDF KM416V1004A/A-L/A-F KM416V1004A-6/A-L6/A-F6 110ns KM416V1004A-7/A-L7/A-F7 130ns KM416V1004A-8/A-L8/A-F8 150ns cycle/64ms cycle/128ms 4h4 1 cmos dram 71FC

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-ll) are optional features of this family. All of this family have CASbefore-RAS refresh, ftAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in t-version. This


    OCR Scan     		PDF KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 16Bit 1Mx16 64ms/16ms

    la 1004a

    Abstract: No abstract text available
    Text: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS ORAM 1 M x 1 6B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Dxtended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply


    OCR Scan     		PDF KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A 1Mx16 la 1004a

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000A, KM416C1200A KM416V1 OPPA, KM416V12PPA CMOS DRAM 1M x 16Bit CM O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000A, KM416C1200A KM416V1 KM416V12PPA 16Bit 1Mx16 DQ8DQ15

    030b4T

    Abstract: C1204B
    Text: KM416V1004BJ ELECTRONICS CMOS D R A M 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416V1004BJ 16Bit 1Mx16 7Rb4142 03Qb5 030b4T C1204B

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B Preliminary CMOS DRAM 1Mx16 Bi t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CM O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B 1Mx16 DG23333

    Untitled

    Abstract: No abstract text available
    Text: KM416V1200BJ CMOS D R A M ELECTRONICS 1 M x 1 6 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416V1200BJ 1Mx16 416V1200BJ) 003072D 3D721

    Untitled

    Abstract: No abstract text available
    Text: KM416V1000BT CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416V1000BT 1Mx16 1000BT) 7Tb4142 GG30b2b

    RAS 1210 SUN HOLD

    Abstract: sun hold RAS 1220 sun hold ras 1210
    Text: CMOS DRAM KM416V1204A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION T h e S a m sun g K M 4 16V 1204A /A -L7A -F is a C M O S high • Performance range: tRA C tC A C tR C tH PC 24ns KM416V1204A-6/A-L6/A-F6 60ns 17ns


    OCR Scan     		PDF KM416V1204A/A-L/A-F KM416V1204A-6/A-L6/A-F6 110ns KM416V1204A-7/A-L7/A-F7 130ns KM416V1204A-8/A-L8/A-F8 150ns 42-LEAD 44-LEAD RAS 1210 SUN HOLD sun hold RAS 1220 sun hold ras 1210

    C1204B

    Abstract: No abstract text available
    Text: KM416V1004BT CMOS D R A M 1Mx16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416V1004BT 16Bit 1Mx16 C1204B

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This


    OCR Scan     		PDF KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 16Bit 1Mx16

    AF6 din 74

    Abstract: No abstract text available
    Text: CMOS DRAM KM416V1OOOA/A-L/A-F 1 M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC K M 416 V 1000 A -6/A -L 6/A -F 6 60ns 15ns 110ns K M 416 V 1000 A -7/A -L 7/A -F 7 70ns 20ns 130ns K M 416 V 1000 A -8/A -L 8/A -F 8


    OCR Scan     		PDF KM416V1OOOA/A-L/A-F 110ns 130ns 150ns cycle/64ms cycle/128ms 42-LEAD 44-LEAD AF6 din 74

    km416c1204

    Abstract: No abstract text available
    Text: KM416C1004B, KM416C1204B KM416V1004B, KM416V1204B Preliminary CMOS DRAM 1Mx16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416C1004B, KM416C1204B KM416V1004B, KM416V1204B 1Mx16Bit 1Mx16 km416c1204

    Untitled

    Abstract: No abstract text available
    Text: KM416V1200BT CMOS DRAM ELECTR O NICS 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416V1200BT 1Mx16Bit 1Mx16 band-w25 5CK44 -TSOP2-400R

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A 16Bit 1Mx16 7Tb4142 GG23317

    Untitled

    Abstract: No abstract text available
    Text: KM416V1004BT CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a lamily of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416V1004BT 1Mx16

    16v1204

    Abstract: C1204B KM416V1204BJ 74142 74142 NOTE
    Text: KM416V1204BJ CMOS D R A M ELECTRONICS 1 M x 1 6 B it CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


    OCR Scan     		PDF KM416V1204BJ 1Mx16Bit 1Mx16 Q323tà 5CK44 -TSOP2-400R 825-ooc 35-q1q 003b2b0 16v1204 C1204B KM416V1204BJ 74142 74142 NOTE

    C1204C

    Abstract: KM416C1004C KM416C1204C KM416V1004C KM416V1204C V1004C
    Text: KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data O ut Mode offers high speed random access of mem ory cells within the sam e row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K


    OCR Scan     		PDF KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C 16Bit 1Mx16 C1204C KM416C1004C KM416C1204C KM416V1004C KM416V1204C V1004C

    Untitled

    Abstract: No abstract text available
    Text: KM416V1004A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: T h e S a m s u n g K M 4 1 6 V 1 0 0 4 A /A -L 7 A -F is a C M O S high s p e e d 1 ,0 4 8 ,5 7 6 b it x 1 6 D y n a m ic R a n d o m A c c e s s


    OCR Scan     		PDF KM416V1004A/A-L/A-F KM416V1004A-6/A-L6/A-F6 KM416V1004A-7/A-L7/A-F7 KM416V1004A-8/A-LS/A-F8 110ns 130ns 160ns 42-LEAD 44-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fa m ily of 1,048,576 x16 bit Fast Page M ode CM OS DRAMs. Fast Page M ode offers high speed random acce ss of m em ory ce lls w ithin the sam e row. Pow er su pply vo lta g e + 5 .0 V o r + 3.3V , refresh


    OCR Scan     		PDF KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A 16Bit 1Mx16

    km416v1200at

    Abstract: KM416V1200aj KM416V1200A
    Text: KM416V1200A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416V1200A/A-L/A-F is a CMOS high speed 1,048,576 b it x 16 Dynamic Random Access Memory. Its design is optimized for high performance


    OCR Scan     		PDF KM416V1200A/A-L/A-F KM416V1200A/A-L/A-F 42-LEAD 44-LEAD km416v1200at KM416V1200aj KM416V1200A