71FC Search Results

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPSA55 14E D I 71fc4142 0 0 0 7 3 t i 4 7 PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: Veto =60V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: SAMSUNG SEMICONDUCTOR INC OE KS74HCTLS ^ 3 D E I 71fc.4142 D 0 D L 3 S 4 0 J~. 13-Input NAND^Gates FEATURES DESCRIPTION • Function, pln-out, speed and drive compatibility with S4/74LS logic family • Low power consumption characteristic of CMOS • High-Drive-Current outputs:

TRANSISTOR D 471

Abstract: KSR1205 KSR2205 J500 INC7-35-H1ME
Contextual Info: SA M S U N G SEM IC ONDUCTOR INC7-36-1114E D | 71fc.mM2 0007071 3 | KSR1205 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built In bias Resistor ( R ^ ^ K O , R,=10Kfl)

KS0106

Contextual Info: KS0106 CMOS DIGITAL INTEGRATED CIRCUIT 50 CHANNEL SEGMENT DRIVER FOR DOT MATRIX LCD The KS0106 is a LCD driver LSI which is fabricated by low power CMOS high voltage process technology. This device consists of Display Data RAM, 50 bit data latch, 50 bit driver and decoder cir­

Contextual Info: KS7306 DIGITAL CAMERA PROCESSOR GENERAL DESCRIPTION KS7306 is a CCD digital signal processor. The electronic video signal that passed the color filter array CFA pattern of CCD is put to the process of dual correlation sampling and then converted to digital video signal by A/D converter.

KS0104

Contextual Info: KS0104 CMOS DIGITAL INTEGRATED CIRCUIT 80 CHANNEL SEGMENT DRIVER FOR LCD DOT MATRIX LCD The K S 0 1 0 4 is a LCD driver LSI w hich is fabricated by low pow e r C M OS high voltage proce ss tech n olo gy. This device consists of 8 0 b it bidirectional sh ift register, 8 0 bit data latch and 8 0 b it driver

Contextual Info: PRELIMINARY KS0787 CMOS DIGITAL INTEGRATED CIRCUIT Introduction KS0787 is a segment driver for dot matrix liquid crystal display system. It consists o f 160 LCD drive circuits, and can drive large area d o t m atrix display. It latchs 4 or 8 bits parallel data from a controller. With the stand-by function, only one driver is operated at the same

R5F56218BNFP

Abstract: R5F562N8BNFP R5F56218 R5F56216 r5f562 RX621 ir234 IR247 sdc 7500 ir153
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: PRELIMINARY PRODUCT SPECIFICATION <£>ZiLOE 89165 Z8 9 1 6 6 Z R O M L E S S LOW-COST D TAD CONTROLLER_ FEATURES • Z 8 M icrocontroller with 47 I/O Lines ■ Clock Speed of 20.48 MHz ■ 24 Kbytes of Z 8 Program ROM (Z89165) ■

eMMC intel

Abstract: ARM1176 bga DP308 P210A eMMC 4.4 7150H mst9588 SI 1340H PD77630A emmc 4.5
Contextual Info: ユーザーズ・マニュアル 携帯マルチメディア・プロセッサ 1 チップ編 EMMA MobileTM1-S PD77630A R19UH0031JJ0600（第６版） S19687JJ6V0UM00 発行年月 June 2010 資料番号 2010 Renesas Electronics Corporation. All rights reserved.

R5F521A8BGFP

Abstract: R5F521A8BDFP R5F521A6BGFP R5f521a8 PC052 9804H R5f521A8B R5F521A8BD
Contextual Info: Datasheet RX21A Group Renesas MCUs 50-MHz 32-bit RX MCUs, 78 DMIPS, 24-bit ΔΣ A/D Converter, up to 512-KB flash memory, IrDA, 10-bit A/D, 10-bit D/A, DEU, ELC, MPC, RTC; up to 9 comms interfaces R01DS0129EJ0100 Rev.1.00 Oct 24, 2012 Features • 32-bit RX CPU core

Contextual Info: KM4132G271 CMOS SGRAM 128K X 32Bit X 2Bank Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • • • • The KM4132G271 is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits, fabricated with SAMSUNG'S high performance CMOS

R5F52108CGFP

Abstract: R5F52106BDLJ R5F52108CGFN R5F52106BDFM#30 R5F52108CDFP R5F52107CDFN#30
Contextual Info: Datasheet RX210 Group R01DS0041EJ0150 Rev.1.50 Oct 18, 2013 Renesas MCUs 50-MHz 32-bit RX MCUs, 78 DMIPS, up to 1-MB flash memory, 12-bit A/D, 10-bit D/A, ELC, MPC, RTC, up to 15 comms channels; incorporating functions for IEC60730 compliance Features PLQP0144KA-A 20 x 20 mm, 0.5-mm pitch

panasonic inverter dv 707 manual

Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
Contextual Info: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594

R5F5210BBDLK

Abstract: R5F52108CGFP PTLG0145KA-A rx210 R5F52108BDFB R5F52106ADFP SCI12 813Ah R5F5210BBGFB R5F52105BGFP
Contextual Info: Datasheet RX210 Group Renesas MCUs 50-MHz 32-bit RX MCUs, 78 DMIPS, up to 1-MB flash memory, 12-bit A/D, 10-bit D/A, ELC, MPC, RTC, up to 15 comms channels; incorporating functions for IEC60730 compliance Features R01DS0041EJ0140 Rev.1.40 Feb 19, 2013 PLQP0144KA-A 20 x 20 mm, 0.5-mm pitch

Contextual Info: Datasheet RX610 Group Datasheet RENESAS 32-Bit MCU 1. Overview 1.1 Features R01DS0097EJ0120 Rev.1.20 Feb 20, 2013 The RX610 Group is an MCU with the high-speed, high-performance RX CPU as its core. One basic instruction is executable in one cycle of the system clock. Calculation functionality is further enhanced, with

pin diagram priority encoder 74145

Abstract: 37-c4 NTSC/PAL TO RGB565 samsung y2 capacitor CCIR601 KS0119 KS0122
Contextual Info: KS0122 Multimedia ELECTRONICS MULTISTANDARD VIDEO DECODER Th e KS0122 converts analog N TSC or PAL video in composite or S-video format to digitized component video. Output data can be selected for C C IR 601 or square pixel sample rates in either Y U V or

Transistor SR 6863 TO-126

Abstract: SR 6863 h980 sr 6863 D sr 6863 3D
Contextual Info: User’s Manual 32 SH7457 Group, SH7459 Group User’s Manual: Hardware Renesas 32-Bit RISC Microcomputer SuperHTM RISC engine Family SH74572 SH74593 R5F74572LBG R5F74593LBG All information contained in these materials, including products and product specifications, represents

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KM44C268C 0G15S45 SO I « S P I C K CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268C is a high speed CMOS

Contextual Info: CMOS SRAM KM616V513 32,768 WORD x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast A c c e ss Time : 17, 20, 25ns(max.) • Low Power Dissipation Standby (TTL) 3mA (max.) . (CMOS) : 100juA (max.) Operating KM616V513-17

Contextual Info: K M 2 9 N 16 0 0 0 R Fl ash ELECTRONICS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The KM29N16000T/R is a 2M 2,097,152 x8 bit NAND Flash memory with spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass

Contextual Info: KM6161002 CMOS SRAM 64K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 10 mA(Max.) Operating KM6161002-15 : 230 mA(Max.) KM6161002-17: 220 mA(Max.)

Contextual Info: KM29N16000ARS Flash ELECTRONICS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

250M

Abstract: IRFS250 IRFS251
Contextual Info: N-CHANNEL POWER MOSFETS IRFS250/251 FEATURES • • • • • • • Lower R d s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability