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    Samsung Semiconductor KM416S4030CT-GB

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    Samsung Semiconductor KM416S4030CT-G7

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    Samsung Semiconductor KM416S4030BT-G10

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    Samsung Semiconductor KM416S4030CT-G8

    SDRAM, 4M x 16, 54 Pin, Plastic, TSOP
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    KM416S4030 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM416S4030B Samsung Electronics CMOS SDRAM Original PDF
    KM416S4030C Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    KM416S4030CT-F10 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Original PDF
    KM416S4030CT-F7 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 143MHz Original PDF
    KM416S4030CT-F8 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 125MHz Original PDF
    KM416S4030CT-FH Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Original PDF
    KM416S4030CT-FL Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Original PDF
    KM416S4030CT-G Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    KM416S4030CT-G7 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 143MHz Original PDF
    KM416S4030CT-G8 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 125MHz Original PDF
    KM416S4030CT-GF10 Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    KM416S4030CT-G/F7 Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    KM416S4030CT-G/F8 Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    KM416S4030CT-G/FA Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    KM416S4030CT-G/FH Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    KM416S4030CT-G/FL Samsung Electronics 1M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    KM416S4030CT-GH Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Original PDF
    KM416S4030CT-GL Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Original PDF
    KM416S4030CT-L10 Samsung Electronics 64Mbit (1M x 16-Bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Original PDF

    KM416S4030 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM416S4030BT

    Abstract: KM416S4030B
    Text: KM416S4030B CMOS SDRAM Revision History Revision .1 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .2 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.


    Original     		PDF KM416S4030B PC100 A10/AP KM416S4030BT KM416S4030B

    KM416S4030C

    Abstract: 1M Synchronous DRAM samsung
    Text: KM416S4030C Preliminary PC133 CMOS SDRAM Revision History Revision 0.0 Oct., 1998 • PC133 first published. REV. 0 Oct. '98 Preliminary PC133 CMOS SDRAM KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S4030C is 67,108,864 bits synchronous high data


    Original     		PDF KM416S4030C PC133 16Bit KM416S4030C A10/AP 1M Synchronous DRAM samsung

    KM416S4030C

    Abstract: No abstract text available
    Text: KM416S4030C Preliminary CMOS SDRAM Revision History Revision 1 May 1998 - ICC2 N value (10mA) is changed to 12mA. Revision .2 (June 1998) - tSH (-10 binning) is revised. REV. 2 June '98 Preliminary CMOS SDRAM KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM


    Original     		PDF KM416S4030C 16Bit KM416S4030C

    KM416S4030D

    Abstract: No abstract text available
    Text: KM416S4030D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 May 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 May 1999 KM416S4030D CMOS SDRAM Revision History Revision 0.0 May 15, 1999


    Original     		PDF KM416S4030D 64Mbit 16Bit A10/AP KM416S4030D

    KM416S4030BT

    Abstract: KM416S4030B
    Text: KM416S4030B CMOS SDRAM Revision History Revision .1 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .2 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.


    Original     		PDF KM416S4030B PC100 KM416S4030BT KM416S4030B

    eeprom programmer schematic 24c08

    Abstract: motorola TP230 eeprom programmer schematic 24c02 transistor C458 C458 datasheet GMC21X7R104K50NT philips c399 RM10F1000CT IC 24c08 transistor c331
    Text: Preliminary ThunderSWITCH 8/3 Schematics Description and Schematics Reference Guide: SPWA023 Networking Business Unit Revision 0.2 April 1998 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or


    Original     		PDF SPWA023 1000PF DS0026-001 eeprom programmer schematic 24c08 motorola TP230 eeprom programmer schematic 24c02 transistor C458 C458 datasheet GMC21X7R104K50NT philips c399 RM10F1000CT IC 24c08 transistor c331

    KMM464S824CT1

    Abstract: No abstract text available
    Text: KMM464S824CT1 PC100 144pin SDRAM SODIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail Y" in PCB Dimension. Rev.0.1 May 1999 KMM464S824CT1 PC100 144pin SDRAM SODIMM KMM464S824CT1 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM464S824CT1 PC100 144pin KMM464S824CT1 8Mx64 4Mx16,

    Untitled

    Abstract: No abstract text available
    Text: KMM366S424DTS PC100 Unbuffered DIMM Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    Original     		PDF KMM366S424DTS PC100 118DIA 000DIA 4Mx16 KM416S4030DT

    sekisui 5760

    Abstract: sis950 SiS chipset 486 SEAGATE st51080n Bt848KPF KSV884T4A1A-07 lad1 5vdc SiS chipset SiS301 kingmax usb flash drive
    Text: SiS540 Super 7 2D/3D Ultra-AGPTM Single Chipset Content Figure .vi Table. vii


    Original     		PDF SiS540 sekisui 5760 sis950 SiS chipset 486 SEAGATE st51080n Bt848KPF KSV884T4A1A-07 lad1 5vdc SiS chipset SiS301 kingmax usb flash drive

    Untitled

    Abstract: No abstract text available
    Text: KM416S4030B Preliminary CMOS SDRAM Revision History Revision ,l November 1997 •tRDL has changed 10ns to 12ns. •Binning -10 does not meet PC 100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. REV. 1 Nov. '97 ELECTRONICS


    OCR Scan     		PDF KM416S4030B 16Bit 416S4030B 10/AP

    KM416S4030AT

    Abstract: ZX-03 KM416S4030AT-G
    Text: KM416S4030AT SDRAM ELECTRONICS 1M x 16Bitx 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.


    OCR Scan     		PDF KM416S4030AT 16Bitx KM416S4030A/KM416S4031A KM416S4030AT) KM416S4030AT ZX-03 KM416S4030AT-G

    KM416S4030C

    Abstract: No abstract text available
    Text: KM416S4030C Preliminary CMOS SDRAM Revision History Revision 1 May 1998 - ICC2 N v a lu e (1 0 m A ) is c h a n g e d to 1 2 m A . Revision .2 (June 1998) - tSH (- 1 0 b in n in g ) is re v is e d . REV. 2 June '98 ELECTRONICS Preliminary CMOS SDRAM KM416S4030C


    OCR Scan     		PDF KM416S4030C 16Bit A10/AP KM416S4030C

    Untitled

    Abstract: No abstract text available
    Text: SERIAL PRESENCE DETECT SDRAM MODULE PC100 Unbuffered SDRAM SODIMM 144pin SPD Specification REV. 1.50 November 1998 REV. 1.50 Nov. 1998 SERIAL PRESENCE DETECT SDRAM MODULE KMM464S424CT1-FH/FL •Organization : 4MX64 •Composition : 4MX16 *4 •Used component p a rt# : KM416S4030CT-FH/FL


    OCR Scan     		PDF PC100 144pin) KMM464S424CT1-FH/FL 4MX64 4MX16 KM416S4030CT-FH/FL 4K/64ms 100MHz

    KM416S4030BT

    Abstract: KM416S4030B KM416S4030
    Text: Preliminary CMOS SDRAM KM416S4030B Revision History Revision .1 November 1997 •tRDL has changed 10ns to 12ns. •Binning -10 does not meet PC 100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. - 1 - ELECTRONICS This Material Copyrighted By Its Respective Manufacturer


    OCR Scan     		PDF KM416S4030B 16Bit A10/AP KM416S4030BT KM416S4030B KM416S4030

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM416S4030C 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S403OC is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS


    OCR Scan     		PDF KM416S4030C 16Bit KM416S403OC

    KM416S4030BT

    Abstract: No abstract text available
    Text: KM416S4030B CMOS SDRAM Revision History Revision .1 N ovem ber 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not m eet PC100 characteristics . So AC param eter/C haracteristics have changed to 64M 2nd values. Revision .2 (February 1998) - Input leakage C urrents (Inputs / DQ) are changed.


    OCR Scan     		PDF KM416S4030B PC100 10/AP KM416S4030BT

    Untitled

    Abstract: No abstract text available
    Text: KM416S4030B CMOS SDRAM 1M x 16Bitx 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S4030B is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’S high performance CMOS


    OCR Scan     		PDF KM416S4030B 16Bitx KM416S4030B 10/AP

    Untitled

    Abstract: No abstract text available
    Text: KMM466S424BT 14 4pm S D R A M S O D I M M Revi si on Hi story Revision .3 March 1998 • Some Parameter values & Chracteristics of comp, level are changed as below : -In p u t leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1.5uA.


    OCR Scan     		PDF KMM466S424BT 44pin 4Mx16 KM416S4030BT

    Untitled

    Abstract: No abstract text available
    Text: 144pin SDRAM SODIMM KMM466S824BT2 R e v is io n H is to ry Revision .2 March 1998 Som e Param eter values & C hracteristics of com p, level are changed as below : - Input leakage C urrents (Inputs) : ± 5uA to ± 1uA. Input leakage C urrents (I/O) : ± 5uA to ± 1,5uA.


    OCR Scan     		PDF KMM466S824BT2 144pin 4Mx16 KM416S4030BT

    Untitled

    Abstract: No abstract text available
    Text: KMM366S824AT NEW JEDEC SDRAM MODULE KMM366S824AT SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S824AT is a 8M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S824AT KMM366S824AT 8Mx64 4Mx16, 400mil 168-pin

    KM416S4030A

    Abstract: km416s4031 KM416S4030AT-G
    Text: K M 4 16 S 4 0 3 1 AT SDRAM ELECTRONICS 1 M x 16Bitx 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.


    OCR Scan     		PDF 16Bitx KM416S4030A/KM416S4031A 416S4031AT) KM416S4030A km416s4031 KM416S4030AT-G

    KMM366S424AT-G2

    Abstract: circuit diagram for auto on off KMM366S424AT
    Text: KMM366S424AT NEW JEDEC SDRAM MODULE KMM366S424AT SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424AT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S424AT KMM366S424AT 4Mx64 4Mx16, 400mil 168-pin KMM366S424AT-G2 circuit diagram for auto on off

    Untitled

    Abstract: No abstract text available
    Text: PC66 SDRAM MODULE KM M366S424CTF KMM366S424CTF SDRAM DIMM 4M x6 4 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous D RAM s with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424CTF is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF M366S424CTF KMM366S424CTF 4Mx16, 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: KMM366S424BT PC100 SDR AM M O D U L E Re vis ion Hist ory Revision .0 February 1998 -Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5uA to ± 1uA, llL(DQ) : ± 5uA to ± 1.5uA. -C in to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V REF =1,4V ± 200 mV.


    OCR Scan     		PDF KMM366S424BT PC100 54Max) 4Mx16 KM416S4030BT