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    64MBIT Search Results

    64MBIT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    AT25DF641A-MH-T Renesas Electronics Corporation 64Mbit, 2.7V to 3.6V Range SPI Serial Flash Memory with Dual I/O Support Visit Renesas Electronics Corporation
    AT25SF641B-MHB-T Renesas Electronics Corporation 64Mbit, 2.7V Minimum SPI Serial Flash Memory with Dual I/O Support Visit Renesas Electronics Corporation
    AT45DB641E-MHN2B-T Renesas Electronics Corporation 64Mbit, 1.7 V to 3.6 V Range SPI Serial Flash Memory Visit Renesas Electronics Corporation
    AT45DB641E-UUN-T Renesas Electronics Corporation 64Mbit, 1.7 V to 3.6 V Range SPI Serial Flash Memory Visit Renesas Electronics Corporation
    AT25SF641-SUB-T Renesas Electronics Corporation 64Mbit, 2.7V Minimum SPI Serial Flash Memory with Dual I/O Support Visit Renesas Electronics Corporation
    AT45DB641E-SHN-B Renesas Electronics Corporation 64Mbit, 1.7 V to 3.6 V Range SPI Serial Flash Memory Visit Renesas Electronics Corporation

    64MBIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    123401

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVEF29LV065U32SJ08-XX 32MB FLASH SIMM, based on AMD Am29LV065D Uniform Sector Flash Memory DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVEF29LV065U32SJ08-XX is a Flash Memory SIMM, composed of four 64Mbit CMOS flash memories, each organized as 8M X 8 bits mounted on a substrate


    Original     		PDF AVEF29LV065U32SJ08-XX Am29LV065D AVEF29LV065U32SJ08-XX 64Mbit 80-pin 120ns 123401

    LH28F640BFHG-PBTL70A

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F640BFHG-PBTL70A Flash Memory 64Mbit 4Mbitx16 (Model Number: LHF64FH9) Spec. Issue Date: September 27, 2004 Spec No: FM045022A LHF64FH9 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


    Original     		PDF LH28F640BFHG-PBTL70A 64Mbit 4Mbitx16) LHF64FH9) FM045022A LHF64FH9 LH28F640BFHG-PBTL70A

    Enhanced SDRAM

    Abstract: No abstract text available
    Text: 64Mbit – Enhanced SDRAM 8Mx8, 4Mx16 ESDRAM Preliminary Data Sheet Overview Features • • • • • • • • • • • • • • High Performance 166 MHz Superset to SDRAM 100% Pin Compatible with SDRAM 100% Function and Timing Compatible with JEDEC


    Original     		PDF 64Mbit 4Mx16 SM2603T-6 SM2604T-6 SM2603T-7 SM2604T-7 SM2603T-10 SM2604T-10 54-pin Enhanced SDRAM

    SM2603

    Abstract: No abstract text available
    Text: 64Mbit - Enhanced SDRAM 8Mx8, 4Mx16 ESDRAM Product Brief Features • 100% Pin Compatible with SDRAM • 100% Function and Timing Compatible with JEDEC standard SDRAM • Integrated 16Kbit SRAM Row Cache • Four Bank Architecture • Synchronous Operation up to 166MHz


    Original     		PDF 64Mbit 4Mx16 16Kbit 166MHz SM2603T-6 SM2604T-6 SM2603T-7 SM2604T-7 SM2603T-10 SM2604T-10 SM2603

    SM3603

    Abstract: Enhanced Memory Systems 8mx8 SM3604T-7
    Text: 64Mbit – High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Data Sheet Features Description • • • • The Enhanced Memory Systems SM3603 and SM3604 HighSpeed SDRAM HSDRAM devices are high performance versions of the proposed JEDEC PC-133 SDRAM. While compatible with standard SDRAM, they provide the faster


    Original     		PDF 64Mbit 4Mx16 SM3603 SM3604 PC-133 SM3603T-7 54-pin SM3604T-7 Enhanced Memory Systems 8mx8

    Untitled

    Abstract: No abstract text available
    Text: V54C365 16/80/40 4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns


    Original     		PDF V54C365 64Mbit

    Untitled

    Abstract: No abstract text available
    Text: V54C365 16/80/40 4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns


    Original     		PDF V54C365 64Mbit

    Untitled

    Abstract: No abstract text available
    Text: V54C365 16/80/40 4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3 5.4 ns 5.4 ns 5.4 ns


    Original     		PDF V54C365 64Mbit

    Untitled

    Abstract: No abstract text available
    Text: HY51V S 64403HG/HGL 16M x 4Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 16,777,216 x 4 bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time(45ns or 50ns) and refresh cycle(8K ref ) and power consumption


    Original     		PDF HY51V 64403HG/HGL 64Mbit 400mil 32pin

    Untitled

    Abstract: No abstract text available
    Text: M25P64 64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 64Mbit of Flash Memory 2.7 to 3.6V Single Supply Voltage SPI Bus Compatible Serial Interface 50MHz Clock Rate maximum


    Original     		PDF M25P64 50MHz 64Mbit 512Kbit) 64Mbit) 2017h) 20-Year

    Untitled

    Abstract: No abstract text available
    Text: HY51V S 65163HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal


    Original     		PDF HY51V 65163HG/HGL 16Bit 64Mbit 100us. 400mil 50pin

    Untitled

    Abstract: No abstract text available
    Text: K4S640832E CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S640832E CMOS SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM


    Original     		PDF K4S640832E 64Mbit K4S640832E A10/AP

    Untitled

    Abstract: No abstract text available
    Text: HY51V64400HG 16M x 4Bit Fast Page DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 16,777,216 x 4 bit configuration with Fast Page mode CMOS DRAMs. Fage page mode offers high speed of random access memory within the same row. The


    Original     		PDF HY51V64400HG 64Mbit 400mil 32pin

    BA102

    Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65
    Text: TC58FVM6 T/B 2A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FVM6T2A/B2A features commands for


    Original     		PDF TC58FVM6 64MBIT TC58FVM6T2A/B2A 67108864-bit, BA102 TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65

    Untitled

    Abstract: No abstract text available
    Text: TRAILING EDGE PRODUCT - MINIMUM ORDER APPLIES 8M x 8 SRAM MODULE SYS88000RKX - 70/85/10/12 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax.+44 (0191) Issue 1.4 : January 1999 2590997 Description Features The SYS88000RKX is a plastic 64Mbit Static RAM


    Original     		PDF SYS88000RKX 64Mbit 512Kx8 100ns 120ns

    74FCT245

    Abstract: No abstract text available
    Text: 8M x 8 SRAM MODULE SYS88000RKX - 70/85/10/12 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Issue 1.4 : January 1999 Description Features The SYS88000RKX is a plastic 64Mbit Static RAM Module housed in a standard 38 pin Single In-Line


    Original     		PDF SYS88000RKX 64Mbit 512Kx8 100ns 120ns 74FCT245

    Untitled

    Abstract: No abstract text available
    Text: K4S641632E-TI P CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 January 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Jan. 2001 K4S641632E-TI(P) CMOS SDRAM Revision History


    Original     		PDF K4S641632E-TI 64Mbit 16Bit

    512k x 8 chip block diagram

    Abstract: 512K x 8 bit sram 32 pin 2M x 32 chip block diagram 512k x 8 SRAM
    Text: 2M x 32 SRAM MODULE SYS322000ZK-015/020/025 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Description The SYS322000ZK is a plastic 64Mbit Static RAM Module offered in a low profile 72 pin ZIP package, organised as 2M x 32. The module


    Original     		PDF SYS322000ZK-015/020/025 SYS322000ZK 64Mbit SYS322000ZKI-15 512k x 8 chip block diagram 512K x 8 bit sram 32 pin 2M x 32 chip block diagram 512k x 8 SRAM

    IS66WVE4M16ALL-70TLI

    Abstract: No abstract text available
    Text: IS66WVE4M16ALL Advanced Information 1.8V Core Async/Page PSRAM Overview The IS66WVE4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several


    Original     		PDF IS66WVE4M16ALL IS66WVE4M16ALL 64Mbit IntrapaWVE4M16ALL-70TLI 48-ball 48-pin MO-207 IS66WVE4M16ALL-70TLI

    LH28F640BFHE-PtTL70

    Abstract: LH28F640BFHE-PTTL70A
    Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F640BFHE-PTTL70A Flash Memory 64Mbit 4Mbitx16 (Model Number: LHF64FG7) Spec. Issue Date: September 2, 2004 Spec No: EL165127A LHF64FG7 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


    Original     		PDF LH28F640BFHE-PTTL70A 64Mbit 4Mbitx16) LHF64FG7) EL165127A LHF64FG7 LH28F640BFHE-PtTL70 LH28F640BFHE-PTTL70A

    Untitled

    Abstract: No abstract text available
    Text: M28W320FSU M28W640FSU 32Mbit 2Mb x16 and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 2.7V to 3.6V for Input/Output


    Original     		PDF M28W320FSU M28W640FSU 32Mbit 64Mbit 64-KWord M28W320FSU: M28W640FSU:

    Untitled

    Abstract: No abstract text available
    Text: Memory Systems Inc. 3 !nd^ st^ TenJPo i S am 64Mbit - High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Preliminary Data Sheet Features Description • • • • The Enhanced Memory Systems SM3603 and SM3604 HighSpeed SDRAM HSDRAM devices are high performance versions of the proposed JEDEC PC-133 SDRAM. The


    OCR Scan     		PDF 64Mbit 4Mx16 SM3603 SM3604 PC-133 3603T-7 54-pin 3604T-7

    Untitled

    Abstract: No abstract text available
    Text: J5SEnhanced Memory ^sterns Inc. 64Mbit - High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Preliminary Data Sheet Features Description • • • The Enhanced Memory Systems SM3603 and SM3604 HighSpeed SDRAM HSDRAM devices are high performance versions of the proposed JEDEC PC-133 SDRAM. While


    OCR Scan     		PDF 64Mbit 4Mx16 SM3603 SM3604 PC-133 SM3603T-7 SM3604T-7

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HYB39S64400/800/160AT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: Multiple Burst Operation -8 -8B -10 Units fCKmax. 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns Automatic Command and Read with Single Write Controlled


    OCR Scan     		PDF HYB39S64400/800/160AT 64MBit