KM48S2020CT-G10
Abstract: hy57v168010a HY57V168010ATC10 en210b HY57V168010a-tc-10 KM416S4030AT-F10 KM416V4104AS-L6 D4516821 THA04D04 M5M4V16s30
Text: R E L I A B I L I T Y A N D 6 C O M P A T I B I L I T Y Reliability and Compatibility Price is not an issue, make sure the one you are having with excellent reliability and compatibility. T o insure the product quality, the rigorous tested before product shipping is
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10BaseT
100BaseTx
XJ4336J
FMC-560
3C563C-TP
APA-1460A
PRD-250WN
KM48S2020CT-G10
hy57v168010a
HY57V168010ATC10
en210b
HY57V168010a-tc-10
KM416S4030AT-F10
KM416V4104AS-L6
D4516821
THA04D04
M5M4V16s30
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KM416S4030AT
Abstract: ZX-03 KM416S4030AT-G
Text: KM416S4030AT SDRAM ELECTRONICS 1M x 16Bitx 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.
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KM416S4030AT
16Bitx
KM416S4030A/KM416S4031A
KM416S4030AT)
KM416S4030AT
ZX-03
KM416S4030AT-G
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Untitled
Abstract: No abstract text available
Text: KMM366S824AT NEW JEDEC SDRAM MODULE KMM366S824AT SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S824AT is a 8M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung
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KMM366S824AT
KMM366S824AT
8Mx64
4Mx16,
400mil
168-pin
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KM416S4030A
Abstract: km416s4031 KM416S4030AT-G
Text: K M 4 16 S 4 0 3 1 AT SDRAM ELECTRONICS 1 M x 16Bitx 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.
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16Bitx
KM416S4030A/KM416S4031A
416S4031AT)
KM416S4030A
km416s4031
KM416S4030AT-G
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KMM366S424AT-G2
Abstract: circuit diagram for auto on off KMM366S424AT
Text: KMM366S424AT NEW JEDEC SDRAM MODULE KMM366S424AT SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424AT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM366S424AT
KMM366S424AT
4Mx64
4Mx16,
400mil
168-pin
KMM366S424AT-G2
circuit diagram for auto on off
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KM416S4030AT
Abstract: No abstract text available
Text: KMM466S824AT NEW JEDEC SDRAM MODULE KMM466S824AT SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S824AT is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM466S824AT
KMM466S824AT
8Mx64
4Mx16,
400mil
144-pin
144-pln
KM416S4030AT
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KM416S4030A
Abstract: KM416S4030AT KM416S4030AT-G
Text: KM416S4030A CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES •• •• •• - GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs CAS Latency 2 & 3
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KM416S4030A
16Bit
KM416S4030A
KM416S4030AT
KM416S4030AT-G
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KMM466S824AT2F0
Abstract: No abstract text available
Text: KMM466S824AT2 NEW JEDEC SDRAM MODULE KMM466S824AT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S824AT2 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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PDF
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KMM466S824AT2
KMM466S824AT2
8Mx64
4Mx16,
400mii
144-pin
KMM466S824AT2F0
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Untitled
Abstract: No abstract text available
Text: KMM466S424AT NEW JEDEC SDRAM MODULE KMM466S424AT SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S424AT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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OCR Scan
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PDF
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KMM466S424AT
KMM466S424AT
4Mx64
4Mx16,
400mil
144-pin
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