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Catalog Datasheet	MFG & Type	Document Tags	PDF
KMM366S424BT-GL Abstract: CADD-30 Text: KMM366S424BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(Inputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV.	Original	KMM366S424BT PC100 100MHz 100MHz KMM366S424BT-GL CADD-30	PDF
KM416S4030BT-G10 Abstract: KMM366S424BTL-G0 KMM366S424BTL Text: KMM366S424BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200mV.	Original	KMM366S424BTL 200mV. 66MHz KM416S4030BT-G10 KMM366S424BTL-G0 KMM366S424BTL	PDF
Untitled Abstract: No abstract text available Text: KMM366S424BT PC100 SDR AM M O D U L E Re vis ion Hist ory Revision .0 February 1998 -Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5uA to ± 1uA, llL(DQ) : ± 5uA to ± 1.5uA. -C in to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V REF =1,4V ± 200 mV.	OCR Scan	KMM366S424BT PC100 54Max) 4Mx16 KM416S4030BT	PDF
KMM366S424BT-GL Abstract: No abstract text available Text: KMM366S424BT PC100 SDRAM MODULE KMM366S424BT SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424BT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung	OCR Scan	KMM366S424BT KMM366S424BT PC100 4Mx64 4Mx16, 400mil 168-pin KMM366S424BT-GL	PDF
Untitled Abstract: No abstract text available Text: Preliminary Intel 1.0 SDRAM MODULE KMM366S424BTL_ Revision History Revision .l November 1997 This spec has changed in accordance with New Binning [s F ' ELECTROftSSCS - 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM366S424BTL KMM366S424BTL SDRAM DIMM	OCR Scan	KMM366S424BTL_ KMM366S424BTL KMM366S424BTL 366S424BTL 400mil 168-pin 54Max) 416S4030BT	PDF
KMM366S424BTL-G0 Abstract: KMM366S424BTL Text: KMM366S424BTL PC66 SDRAM MODULE KMM366S424BTL SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424BTL is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung	OCR Scan	KMM366S424BTL KMM366S424BTL 4Mx64 4Mx16, 400mil 168-pin KMM366S424BTL-G0	PDF
KMM366S424BTL-G0 Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT Text: TABLE OF CONTENTS \| I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .	OCR Scan	KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT 1Mx16 KM44S16020BT KM48S8020BT KM416S4020BT ------------------------------------16Mx4 4Mx64 KMM366S424BTL-G0 KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT	PDF