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    Samsung Semiconductor KM416C256BJ-7T

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    Onlinecomponents.com KM416C256BJ-7T 174
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    Samsung Semiconductor KM416C256DT-L6

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    Samsung Semiconductor KM416C254BT-6

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    SEC KM416C254DJ-5

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    Samsung Semiconductor KM416C1200CJ-6

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    Quest Components KM416C1200CJ-6 216
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    KM416C Datasheets (244)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    KM416C1000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    KM416C1000B Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C1000BJ-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM416C1000BJ-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM416C1000BJ-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Original PDF
    KM416C1000BJL-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM416C1000BJL-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM416C1000BJL-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Original PDF
    KM416C1000BT-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM416C1000BT-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM416C1000BT-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Original PDF
    KM416C1000BTL-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM416C1000BTL-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM416C1000BTL-7 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 70ns Original PDF
    KM416C1000C Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C1000CJ-5 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Original PDF
    KM416C1000CJ-5 Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C1000CJ-6 Samsung Electronics 1M x 16-Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Original PDF
    KM416C1000CJ-6 Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM416C1000CJ-L-5 Samsung Electronics 1M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    ...

    KM416C Datasheets Context Search

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    C1000B

    Abstract: 3020C
    Text: KM416C1000BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		KM416C1000BT 16Bit 1Mx16 7Tb4142 DD3D23b C1000B 3020C PDF

    km416c1200j

    Abstract: km416c1200 MAS 10 RCD 71FC
    Text: SAMSUNG ELECTRONICS INC b?E ]> • 7Tmi4E D01b3ña 731 SMGK CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynam ic Random A ccess Memory. Its


    OCR Scan     		KM416C1200 KM416C1200-7 130ns KM416C1200-8 150ns KM416C1200-10 100ns 180ns cycles/16ms km416c1200j MAS 10 RCD 71FC PDF

    km416c254b

    Abstract: No abstract text available
    Text: CMOS DRAM KM416C254B, KM416V254B 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,


    OCR Scan     		KM416C254B, KM416V254B 256Kx 256Kx16 00E02M3 km416c254b PDF

    Untitled

    Abstract: No abstract text available
    Text: High Speed KM416C254D CMOS DRAM High Speed 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -4 , power consumption(Normal or Low power) and package type(SOJ or TSOP-II)


    OCR Scan     		KM416C254D 16Bit 256Kx16 DD371Ã PDF

    KM416C64

    Abstract: No abstract text available
    Text: KM416C64 CMOS DRAM 6 4 K x 1 6 B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 65,536 x 16 bit Extended Date Out CMOS DRAMs. Extended Date Out Mode offers high speed random access of memory cells within the same row. Access time 55, 60 or 70 , power consumption


    OCR Scan     		KM416C64 64Kx16 KM416C64/L KM416C64 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D 7 ^4 1 4 2 0 G1 S Ö 73 ‘t ë ô CMOS DRAM KM416C256A/AL/ALL 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tcAc tRC 60ns 15ns 110ns KM416C256A/AÜALL-7 70ns 20ns 130ns


    OCR Scan     		KM416C256A/AL/ALL 256Kx 110ns KM416C256A/AÃ 130ns KM416C256A/AL/ALL-8 150ns KM416C256A/AUALL-6 40-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C1204A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: KM416C1204A-6/A-L6/A-F6 tRAC tCAC tRC tHPC 60ns 17ns 110ns 24ns KM416C1204A-7/A-L7/A-F7 70ns 20ns 130ns 29ns KM416C1204A-8/A-L8/A-F8


    OCR Scan     		KM416C1204A/A-L/A-F KM416C1204A-6/A-L6/A-F6 110ns KM416C1204A-7/A-L7/A-F7 130ns KM416C1204A-8/A-L8/A-F8 150ns cycle/16m cycle/128msCLE 71b4142 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C256D, KM416V256D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5,-6,-7), power consumption(Normal or Low power) and


    OCR Scan     		KM416C256D, KM416V256D 16Bit 256Kx16 0G372DS PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7^4142 GGlb343 S73 ■ SMGK KM416C1000 CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1000 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its


    OCR Scan     		GGlb343 KM416C1000 KM416C1000 130ns KM416C1000-8 150ns KM416C1000-10 100ns 180ns KM416C1000-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D KM416C1200L/LL • 7^4142 DDlbmO TG6 « S H C K CMOS DRAM 1 M x 1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1200L/LL is a CMOS high speed 1,048,576 b itx 1 6 D ynam ic Random A ccess Memory.


    OCR Scan     		KM416C1200L/LL KM416C1200L/LL KM416C1200L/LL-7 130ns KM416C1200L/LL-8 KM416C1200LVLL-10 100ns 180ns Dlb432 PDF

    km416c60j

    Abstract: KM416C60
    Text: KM416C60 CMOS DRAM 64Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 65,536 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time 55,60 or 70 power consumption (Normal


    OCR Scan     		KM416C60 64Kx16 KM416C60/L DQ8-DQ15 D02314b km416c60j KM416C60 PDF

    VG264265B

    Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
    Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D


    OCR Scan     		256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference PDF

    KM416C256ALJ-7

    Abstract: No abstract text available
    Text: KM416C256ALJ-7 1/2 IL00 * C-MOS 4M (256K X 16)-BIT DYNAMIC RAM WITH FAST PAGE MODE -TOP VIEW- 16 DQ1 I/O 1 VDD(+5V) 2 GND 40 39 DQ16 I/O 17 18 19 DQ2 I/O 3 38 DQ15 I/O DQ3 I/O 4 37 DQ14 I/O DQ4 I/O 5 36 DQ13 I/O 22 23 24 25 6 VDD(+5V) DQ5 I/O 7 GND 35


    Original     		KM416C256ALJ-7 144X16 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C256D, KM416V256D CMOS DRAM 2 5 6 K x 16 Bit C M O S Dynamic RA M with Fast Page Mode DESCRIPTION This is a family of 262.144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage -*-5.0V or +3.3V , access time


    OCR Scan     		KM416C256D, KM416V256D 256Kx16 DQODQ15 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-ll) are optional features of this family. All of this family have CASbefore-RAS refresh, ftAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in t-version. This


    OCR Scan     		KM416C1000C, KM416C1200C KM416V1000C, KM416V1200C 16Bit 1Mx16 64ms/16ms PDF

    C254D

    Abstract: e5a5
    Text: High Speed KM416C254D CMOS DRAM High Speed 256K x 16Bit CM OS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -4 , power consumption(Normal or Low power) and package type(SOJ or TSOP-II)


    OCR Scan     		KM416C254D 16Bit 256Kx16 C254D e5a5 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C256B, KM416V256B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


    OCR Scan     		KM416C256B, KM416V256B 256Kx16 PDF

    la 1004a

    Abstract: No abstract text available
    Text: KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A CMOS ORAM 1 M x 1 6B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Dxtended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply


    OCR Scan     		KM416C1004A, KM416C1204A KM416V1004A, KM416V1204A 1Mx16 la 1004a PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C1004A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1004A/A-L/A-F is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance


    OCR Scan     		KM416C1004A/A-L/A-F KM416C1004A/A-L/A-F 42-LEAD 44-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C1OOOA/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC 60ns 15ns 110ns KM416C1000A-7/A-L7/A-F7 70ns 20ns 130ns KM416C1000A-8/A-L8/A-F8 80ns 20ns 150ns KM416C1000A-6/A-L6/A-F6


    OCR Scan     		KM416C1OOOA/A-L/A-F KM416C1000A/A-L/A-F KM416C1 DQ1-DQ16 42-LEAD 44-LEAD PDF

    e5as

    Abstract: No abstract text available
    Text: KM416C254D, KM416V254D CMOS DRAM 256K x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or + 3.3V , Access time (-5,-6 or -7), power consumption(Normal or


    OCR Scan     		KM416C254D, KM416V254D 16Bit 256Kx16 e5as PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		KM416C1200 KM416C1200-7 KM416C1200-8 KM416C1200-10 100ns 130ns 150ns 180ns KM416C1200 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000A, KM416C1200A KM416V1 OPPA, KM416V12PPA CMOS DRAM 1M x 16Bit CM O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		KM416C1000A, KM416C1200A KM416V1 KM416V12PPA 16Bit 1Mx16 DQ8DQ15 PDF

    KM416C1000-7

    Abstract: No abstract text available
    Text: KM416C1000 CMOS DRAM 1 M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1000 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized fo r high performance applications


    OCR Scan     		KM416C1000 KM416C1000-7 KM416C1000-8 KM416C1000-10 100ns 130ns 150ns 180ns KM416C1000 PDF