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Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • 7^4142 GGlb343 S73 ■ SMGK KM416C1000 CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1000 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its
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GGlb343
KM416C1000
KM416C1000
130ns
KM416C1000-8
150ns
KM416C1000-10
100ns
180ns
KM416C1000-7
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MT28F002B1VG-8 B
Abstract: No abstract text available
Text: PRELIMINARY MT28F002B1 256K x 8 FLASH MEMORY MICRON U QUANTUM DEVtCEft, INC. FLASH MEMORY 256K x 8 S m artV o ltag e, FEATURES • Five erase blocks: 16KB boot block protected Two 8KB parameter blocks Two main memory blocks • Deep Power-Down Mode: 8(aA at 5V Vcc; 8|xA at
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MT28F002B1
100ns
110ns,
150ns
40-Pin
VMT28F002B1
001b34b
MT28F002B1VG-8 B
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