Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KM416C1200J Search Results

    SF Impression Pixel

    KM416C1200J Price and Stock

    Samsung Semiconductor KM416C1200J-7

    FAST PAGE DRAM, 1MX16, 70NS, CMOS, PDSO42
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM416C1200J-7 2
    • 1 $15
    • 10 $15
    • 100 $15
    • 1000 $15
    • 10000 $15
    		Buy Now

    KM416C1200J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    km416c1200j

    Abstract: km416c1200 MAS 10 RCD 71FC
    Text: SAMSUNG ELECTRONICS INC b?E ]> • 7Tmi4E D01b3ña 731 SMGK CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynam ic Random A ccess Memory. Its


    OCR Scan     		PDF KM416C1200 KM416C1200-7 130ns KM416C1200-8 150ns KM416C1200-10 100ns 180ns cycles/16ms km416c1200j MAS 10 RCD 71FC

    KM416C1200

    Abstract: TCA 1085 km416c1200j
    Text: CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: The S am sung KM416C1200 is a CMOS h ig h speed 1,048,576 bit x 16 D ynam ic Random A ccess Memory. Its de sig n is op tim ize d fo r high pe rform ance a p p lica tio n s


    OCR Scan     		PDF KM416C1200 KM416C1200-7 KM416C1200-8 KM416C1200-10 130ns 150ns 180ns KM416C1200 TCA 1085 km416c1200j

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM416C1200 KM416C1200-7 KM416C1200-8 KM416C1200-10 100ns 130ns 150ns 180ns KM416C1200

    IR014

    Abstract: ABB B45 SD411664400001 I0603B C6050 pbe-4 ic 14069 C611U 8oC51 vadem 468
    Text: S33,S35,R3 4 ,W3 5,A L I 9,AN3 5 FOR VCC PXN142/119 1T C153 100U/6.3V CP7243 JV1 «JP_V R D 025_013 11 1 1 14 92 < P A [3.31i S7d9 7170 vvvv cccc cccc DD VV I §11 40 VV S cc V CA4A ? g CA4B ^ CA3 C R C S A # /C E# CRCSB#/ADSC# CROEA#/OE# CROEB#/ADV# CRWO#


    OCR Scan     		PDF PXN142/119 100U/6 CP7243 C147x-pv 1C104- 1996lSheet 8OC51 IR014 ABB B45 SD411664400001 I0603B C6050 pbe-4 ic 14069 C611U vadem 468

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM416C1200 KM416C1200 130ns KM416C1200-8 KM416C1200-10 KM416C1200-7 100ns 180ns 150ns

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM416C1200 1 M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM416C1200 KM416C1200 KM416C1200-7 130ns KM416C1200-8 150ns 100ns 180ns KM416C1200-10

    5362203

    Abstract: No abstract text available
    Text: DRAM MODULE 8 Mega Byte KMM5362203W/WG Fast Page Mode 2Mx36 DRAM SIMM , 1K Refresh, 5V Using 1Mx16 BAN DRAM and 1Mx4 Quad CAS DRAM G E N E R A L DESCRIPTIO N FEATURES • Performance Range. The Sam sung KM M 5362203W is a 2M bit x 36 D ynam ic RAM high density m em ory m odule The


    OCR Scan     		PDF KMM5362203W/WG 2Mx36 1Mx16 362203W 72-pin KMM5322203W 5362203

    KM416C1200

    Abstract: No abstract text available
    Text: S A MS UN G E L E C T R O N I C S INC b7E D • KM416C1200 7 T m i 4 E 0 0 1 b 3 ññ 731 CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM416C1200 is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its


    OCR Scan     		PDF KM416C1200 KM416C1200 KM416C1200-7 130ns KM416C1200-8 150ns KM416C1200-10 100ns 180ns 200/is

    4mx4

    Abstract: 24-PIN
    Text: M E M O R Y IC s Dynamic RAM Capacity FUNCTION G UIDE Continued Part Number Organization KM44C4002T Speed(ns) Technology CMOS Static Column CMOS CMOS CMOS Static Column Static Column Static Column CMOS CMOS Static Column Static Column 24 Pin TSOP-ll(Reverse)


    OCR Scan     		PDF KM44C4002T KM44C4002TR KM44C4102J KM44C4102T KM44C4102TR KM44C4010J KM44C4010T KM44C4010TR KM44C4110J KM44C4110T 4mx4 24-PIN

    1Mx4

    Abstract: No abstract text available
    Text: DRAM MODULE 4 Mega Byte KMM5361203W/WG Fast Page Mode 1Mx36 DRAM SIMM , 1K Refresh, 5V Using 1Mx16 B/W DRAM and 1Mx4 Quad CAS DRAM GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5361203W is a 1M bit x 32 Dynamic RAM high density memory module The


    OCR Scan     		PDF KMM5361203W/WG 1Mx36 1Mx16 KMM5361203W 42-pin 24-pin 72-pin 1Mx4