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    Samsung Electronics Co. Ltd KM23V4100DG-12

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    KM23V4100D Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM23V4100D Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23V4100DET Samsung Electronics 4M-Bit (512K x 8 /256x16) CMOS MASK ROM Original PDF
    KM23V4100DG Samsung Electronics 4M-Bit (512K x 8 /256K x 16) CMOS MASK ROM Original PDF
    KM23V4100DT Samsung Electronics 4M-Bit (512K x 8 /256x16) CMOS MASK ROM Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: KM23V4100D E T CMOS MASK ROM 4M-Bit (512Kx8 /256x16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    Original     		PDF KM23V4100D 512Kx8 /256x16) 100ns 120ns 44-TSOP2-400 44-TSOP2-400)

    KM23V4100D

    Abstract: KM23V4100DG 40DIP600 40-DIP-600
    Text: KM23V4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    Original     		PDF KM23V4100D 512Kx8 /256Kx16) 100ns 120ns KM23V4100D 40-DIP-600 KM23V4100DG 40-SOP-525 KM23V4100DG 40DIP600 40-DIP-600

    Untitled

    Abstract: No abstract text available
    Text: KM23V4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    Original     		PDF KM23V4100D 512Kx8 /256Kx16) 100ns 120ns KM23V4100D 40-DIP-600 KM23V4100DG 40-SOP-525

    KM23V4100D

    Abstract: KM23V4100DET KM23V4100DT
    Text: KM23V4100D E T CMOS MASK ROM 4M-Bit (512Kx8 /256x16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    Original     		PDF KM23V4100D 512Kx8 /256x16) 100ns 120ns 44-TSOP2-400 KM23V4100DET KM23V4100DT

    KM23V4100D

    Abstract: KM23V4100DG
    Text: KM23V4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    Original     		PDF KM23V4100D 512Kx8 /256Kx16) 100ns 120ns KM23V4100D 40-DIP-600 KM23V4100DG 40-SOP-525 KM23V4100DG

    KM23V4100D

    Abstract: KM23V4100DET KM23V4100DT 256x16 rom
    Text: KM23V4100D E T CMOS MASK ROM 4M-Bit (512Kx8 /256x16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    Original     		PDF KM23V4100D 512Kx8 /256x16) 100ns 120ns 44-TSOP2-400 KM23V4100DET KM23V4100DT 256x16 rom

    Untitled

    Abstract: No abstract text available
    Text: KM23V4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION » Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation: 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    OCR Scan     		PDF KM23V4100D 512Kx8 /256Kx16) 100ns 120ns KM23V4100D 40-DIP-600 KM23V41000G 40-50P-525 KM23V41

    Untitled

    Abstract: No abstract text available
    Text: KM23V4100D E T 4M-Bit (5 1 2 K X 8 /2 5 6 x 1 6 ) CMOS MASK ROM CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switehabte organization 524,288 x 8(byte mode) 262,144 x 16{word mode) • Fast access tine 3.3V Operation: 100ns(Max.) 3.0V Operation: 120ns(Max.)


    OCR Scan     		PDF KM23V4100D 100ns 120ns 44-TSOP2-4QO 100pF

    23V4100DG

    Abstract: 40-SO
    Text: KM23V4100D G CMOS MASK ROM 4M-Bit (512Kx8 256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    OCR Scan     		PDF KM23V4100D 512Kx8 256Kx16) 100ns 120ns KM23V4100D 40-DIP-600 23V4100DG 40-SO P-525 23V4100DG

    Untitled

    Abstract: No abstract text available
    Text: KM23V41 OOD G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable orginization 524,288 x 8 (byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    OCR Scan     		PDF KM23V41 512Kx8 /256Kx16) 100ns 120ns 23V4100D 40-DIP-600 23V4100DG 40-SO P-525

    Untitled

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction . 11 2. Product Guide . 14 3. Ordering Information . 16


    OCR Scan     		PDF KM23C4000D KM23C4100D KM23C41 KM23V64000T. KM23V64005AG KM23V64005ATY. KM23V64205ASG KM23SV32205T

    48TSOP1

    Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
    Text: MEMORY ICs 1. FUNCTION GUIDE INTRODUCTION 4M bit \ KM23C400QD G -8 512KX8 [- 1 KM23C4QOOD(G)-10 KM23C40QQD(E)TY-8 \ |— KM23C4Q00D(G)-12 ]- 1 KM23C4Q00D(E)'TY-10 |- 1 KM23C4000D(E)7Y-12 — [ KM23V4000D(E)TY-10 |- 1 KM23V4000D{E)TY-12 |-j KM23V4000D(E)TY-15


    OCR Scan     		PDF 512KX8 KM23C400QD KM23C4QOOD KM23C4Q00D KM23C40QQD TY-10 KM23C4000D 7Y-12 KM23V4000D 48TSOP1 MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12