KS32P6632
Abstract: NAND FLASH 64MB sample code read and write flash memory PCMCIA FLASH CARD 10MB TSOP 14X20 lexar cf 64mb controller Datasheet toshiba NAND Flash MLC vending machine source code pcmcia flash memory 8MB ata VG365
Text: Mass Storage Application Memory Product & Technology Division 2000.03.15 Product Planning & Application Engineering The Leader in Memory Technology ELECTRONICS Mass MassStorage StorageApplication ApplicationArea Area Flash Card Small Form Factor Card PCMCIA Card Form Factor
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056KB
KS32P6632
NAND FLASH 64MB
sample code read and write flash memory
PCMCIA FLASH CARD 10MB
TSOP 14X20
lexar cf 64mb controller
Datasheet toshiba NAND Flash MLC
vending machine source code
pcmcia flash memory 8MB ata
VG365
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K6R1008V1D
Abstract: No abstract text available
Text: PRELIMINARY for AT&T CMOS SRAM K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify
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K6R1008V1D
64Kx16
100mA
32-TSOP2-400CF
002MIN
K6R1008V1D
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K6X4016C3F
Abstract: K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q
Text: CMOS SRAM K6X4016C3F Family Document Title 256Kx16 bit Low Power full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 26, 2002 Preliminary 0.1 Revised Added Commercial Product. Deleted 44-TSOP2-400R Package Type.
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K6X4016C3F
256Kx16
44-TSOP2-400R
K6X4016C3F-B
K6X4016C3F-F
K6X4016C3F-Q
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K6R1004C1D
Abstract: No abstract text available
Text: PRELIMINARY Preliminary PRELIMINARY K6R1004C1D CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial release with Preliminary. Current modify 1. Delete 15ns speed bin.
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K6R1004C1D
256Kx4
32-SOJ-400
K6R1004C1D
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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K6R4004C1D-JC
Abstract: K6R4004V1D K6R4016V1D-J
Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary
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K6R4004V1D
110mA
130mA
115mA
100mA
32-SOJ-400
K6R4004C1D-JC
K6R4004V1D
K6R4016V1D-J
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tsop 48 PIN type2
Abstract: 48BGA MR0A16AMA35
Text: MR0A16A FEATURES 64K x 16 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, Extended Temperatures • Data always non-volatile for >20-years at temperature
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MR0A16A
20-years
MR0A16A
576-bit
EST354
tsop 48 PIN type2
48BGA
MR0A16AMA35
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0.35mm pitch BGA
Abstract: MR4A08BCYS35R MR4A08B MR4A08BC mr4a08bcys MR4A08BCYS35
Text: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages
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MR4A08B
20-years
AEC-Q100
MR4A08B
216-bit
MR4A08B,
EST356
0.35mm pitch BGA
MR4A08BCYS35R
MR4A08BC
mr4a08bcys
MR4A08BCYS35
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Untitled
Abstract: No abstract text available
Text: K3N5V U 1000E-TC CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF
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1000E-TC
16M-Bit
/1Mx16)
100ns
120ns
100pF
44-TSOP2-400
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Untitled
Abstract: No abstract text available
Text: K3N7V U 1000B-TC CMOS MASK ROM 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF
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1000B-TC
64M-Bit
/4Mx16)
100ns
120ns
100pF
44-TSOP2-400
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Untitled
Abstract: No abstract text available
Text: K3P7V U 1000B-TC CMOS MASK ROM 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time Random Access Time/Page Access Time 3.3V Operation : 100/30ns(Max.)@CL=50pF,
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1000B-TC
64M-Bit
/4Mx16)
100/30ns
120/40ns
100pF
44-TSOP2-400
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K6T4016C3B-TB70
Abstract: K6T4016C3B-B
Text: CMOS SRAM K6T4016C3B Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996 Preliminary 1.0 Finalize December 17, 1996
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K6T4016C3B
256Kx16
15/75mA
130mA
100pF
K6T4016C3B-TB70
K6T4016C3B-B
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k6t4016c3c-tf70
Abstract: K6T4016C3C-TB70 K6T4016C3C-TB55 K6T4016C3C April 1999
Text: CMOS SRAM K6T4016C3C Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1998 Preliminary 1.0 Finalize April 17, 1999 Finalize The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K6T4016C3C
256Kx16
k6t4016c3c-tf70
K6T4016C3C-TB70
K6T4016C3C-TB55
April 1999
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Untitled
Abstract: No abstract text available
Text: K6F8008U2M Family CMOS SRAM Document Title 1M x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft August 25, 1999 Preliminary 1.0 Finalize - Adopt new code. - Improve VIN, VOUT max. on A
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K6F8008U2M
85/Typ.
25/Typ.
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Untitled
Abstract: No abstract text available
Text: K6T8016C3M Family CMOS SRAM Document Title 512Kx16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft June 18, 1999 Advance 1.0 Finalize - Adopt New Code system. - Improve VIN, VOUT max. on A ’ BSOLUTE MAXIMUM RATINGS’from
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K6T8016C3M
512Kx16
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K6F8016U3A-TB55
Abstract: K6F8016U3A-RB55 K6F8016u3a
Text: K6F8016U3A Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft December 11, 2000 Preliminary 1.0 Finalize - Isb1 change : 25µA to 15µA
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K6F8016U3A
K6F8016U3A-TB55
K6F8016U3A-RB55
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K6R4008V1D
Abstract: K6R4016C1D 44-TSOP2
Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary
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K6R4004V1D
110mA
130mA
115mA
100mA
32-SOJ-400
K6R4008V1D
K6R4016C1D
44-TSOP2
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Untitled
Abstract: No abstract text available
Text: K6T4016V3B, K6T4016U3B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change: A to B September 19, 1996 Preliminary
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K6T4016V3B,
K6T4016U3B
256Kx16
10/45mA
KM616V4000BI,
KM616U4000B
KM616U4000BI
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K6R1016C10
Abstract: k6r1016c1c
Text: K6R1016C1C-C/C-L, K6R1016C1C-I/C-P CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with preliminary.
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K6R1016C1C-C/C-L,
K6R1016C1C-I/C-P
64Kx16
48-fine
K6R1016C1C-Z
K6R1016C1C-F
80/Typ.
25/Typ.
K6R1016C10
k6r1016c1c
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DQU12
Abstract: No abstract text available
Text: MR0A16A FEATURES 64K x 16 MRAM Memory • 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, and Extended Temperatures
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MR0A16A
44-pinâ
48-ballâ
1-877-347-MRAMâ
EST00354
MR0A16A
080512a
DQU12
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Untitled
Abstract: No abstract text available
Text: K6L1016C3B CMOS SRAM Document Title 64K x16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft August 12, 1995 Preliminary 1.0 Finalize - One datasheet for commercial and industrial part. April 15, 1996
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K6L1016C3B
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vdr10
Abstract: KM616FV2000A KM616FV2000ATI-10
Text: KM616FV2000A Family CMOS SRAM Document Title 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft for design target. November 18, 1998 Advance 0.1 Resive December 1, 1998
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KM616FV2000A
vdr10
KM616FV2000ATI-10
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54TSOP2
Abstract: No abstract text available
Text: PACKAGE DIMENSIONS CMOS DRAM PLASTIC THIN S M A LL OUT-LINE P A C K A G E TYPE II 44TSOP2-400F Unit : Millimeters #44 fl RFi fl ñR T lf HöHHb #1 0.005'to.oai & -M A X 1.20 18.41«o.io 0.725 «00S4 .y 0.047 1.00»o.io 0.039* 0 .00« TTnOTTOTPTÜTOOTÜ ,0 .605'
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OCR Scan
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44TSOP2-400F
50-TSOP2-400F
54-TSOP2-400F
86-TSOP2-400F
54TSOP2
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Scans-0012741
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM616V4002B/BL, KM616V4002BI/BLI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0
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KM616V4002B/BL,
KM616V4002BI/BLI
256Kx16
KM616V4002BI/BLI
44-SOJ-400
44-TSO
P2-400F
Scans-0012741
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