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    Samsung Semiconductor K4S561632B-TC75

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    Bristol Electronics K4S561632B-TC75 10
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    Quest Components K4S561632B-TC75 13
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    Samsung Electronics Co. Ltd K4S561632BTC75

    4M X 16BIT X 4 BANKS SYNCHRONOUS DRAM LVTTL Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54
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    ComSIT USA K4S561632BTC75 21
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    Samsung Electro-Mechanics K4S561632B-TC75T

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    Chip 1 Exchange K4S561632B-TC75T 4,273
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    K4S561632B Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    K4S561632B Samsung Electronics 256Mbit SDRAM 4M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S561632B-TC/L Samsung Electronics 4MB x 16-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S561632B-TC-L Samsung Electronics 4MB x 16-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S561632B-TC/L1H Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. Original PDF
    K4S561632B-TC/L1L Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. Original PDF
    K4S561632B-TC/L75 Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. Original PDF
    K4S561632B-TC/L, TI/P Samsung Electronics 4MB x 16-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S561632B-TI-P Samsung Electronics 4MB x 16-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF

    K4S561632B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4S561632B

    Abstract: No abstract text available
    Text: Preliminary K4S561632B-TI P CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 January 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Jan. 2001 Preliminary K4S561632B-TI(P)


    Original     		PDF K4S561632B-TI 256Mbit 16bit 256Mb K4S561632B

    K4S561632B

    Abstract: No abstract text available
    Text: K4S561632B CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 May.2000 K4S561632B CMOS SDRAM Revision 0.1 March 10, 2000


    Original     		PDF K4S561632B 256Mbit 16bit 133MHz" A10/AP K4S561632B

    samsung date code

    Abstract: 16MX64 sdram samsung
    Text: SERIAL PRESENCE DETECT PC100 SODIMM PC100 SODIMM 144pin SPD Specification (256Mb B-die base) Rev. 0.1 Apr. 2000 Rev 0.1 Apr. 2000 SERIAL PRESENCE DETECT PC100 SODIMM M464S1654BT1-L1H/L1L, C1H/C1L • Organization : 8MX64 • Composition : 16MX16 *4 • Used component part # : K4S561632B-TL1H/TL1L,TC1H/TC1L


    Original     		PDF PC100 144pin) 256Mb M464S1654BT1-L1H/L1L, 8MX64 16MX16 K4S561632B-TL1H/TL1L 4K/64ms samsung date code 16MX64 sdram samsung

    Untitled

    Abstract: No abstract text available
    Text: M464S3254BT1 PC133 SODIMM Revision History Revision 0 May, 2000 - PC133 First Published. Rev. 0 May. 2000 M464S3254BT1 PC133 SODIMM M464S3254BT1 SDRAM SODIMM 32Mx64 SDRAM SODIMM based on 16Mx16,4Banks,8K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION


    Original     		PDF M464S3254BT1 PC133 M464S3254BT1 32Mx64 16Mx16

    M464S1654BT2

    Abstract: M464S1654BT2-L75
    Text: M464S1654BT2 PC133 SODIMM Revision History Revision 0 Oct. 2000 -PC133 First Published. Rev. 0.0 Oct. 2000 M464S1654BT2 PC133 SODIMM M464S1654BT2 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16,4Banks,8K Refresh 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION


    Original     		PDF M464S1654BT2 PC133 -PC133 M464S1654BT2 16Mx64 16Mx16 M464S1654BT2-L75

    Untitled

    Abstract: No abstract text available
    Text: M464S1654BT1 PC133 SODIMM Revision History Revision 0 May. 2000 -PC133 First Published. Rev. 0 May. 2000 M464S1654BT1 PC133 SODIMM M464S1654BT1 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16,4Banks,8K Refresh 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION


    Original     		PDF M464S1654BT1 -PC133 PC133 M464S1654BT1 16Mx64 16Mx16

    Untitled

    Abstract: No abstract text available
    Text: M464S1654BT1 PC133 SODIMM Revision History Revision 0 May. 2000 -PC133 First Published. Revision 0.1 (Sep. 2000) -Typo error corrections at Package dimensions. Rev. 0.1 Sep. 2000 M464S1654BT1 PC133 SODIMM M464S1654BT1 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16,4Banks,8K Refresh 3.3V Synchronous DRAMs with SPD


    Original     		PDF M464S1654BT1 PC133 -PC133 M464S1654BT1 16Mx64 16Mx16

    M464S1724CT2-L75

    Abstract: M464S3254BT2-L75 sdram pcb gerber m464s1654* samsung M464S3254BT2 K4S561632A
    Text: SERIAL PRESENCE DETECT PC133 SODIMM PC133 144pin Unbuffered SDRAM SODIMM SPD Specification Intel Gerber 1.2ver. base Rev. 0.0 Nov. 2000 Rev. 0.0 Nov. 2000 SERIAL PRESENCE DETECT PC133 SODIMM • Revision History [Revision 0.0] Nov. 03, 2000 Intel Gerber 1.2ver. based PC133 SODIMM SPD Published.


    Original     		PDF PC133 144pin M464S0424DT2-L75/C75 M464S0424ET2-L75/C75 M464S0824DT2-L75/C75 M464S0824ET2-L75/C75 M464S0924BT2-L75/C75 M464S1724CT2-L75 M464S3254BT2-L75 sdram pcb gerber m464s1654* samsung M464S3254BT2 K4S561632A

    m464s16* samsung

    Abstract: pc66 march 1999
    Text: SERIAL PRESENCE DETECT PC133 SODIMM PC133 Unbuffered SDRAM SODIMM 144pin SPD Specification Rev. 1.2 March. 2000 Rev. 1.2 March. 2000 SERIAL PRESENCE DETECT PC133 SODIMM • Revision History [Revision 0.0] Oct. 11, 1999 Jedec based PC133 SODIMM SPD Published.


    Original     		PDF PC133 144pin) byte62) 128Mb C-die/256Mb M464S0424CT1-L75/C75 M464S0424DT1-L75/C75 m464s16* samsung pc66 march 1999

    M464S1654BT1

    Abstract: M464S1654BT1-L1H M464S1654BT1-L1L
    Text: PC100 SODIMM M464S1654BT1 M464S1654BT1 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S1654BT1 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S1654BT1 consists of four CMOS 16M x 16 bit with


    Original     		PDF PC100 M464S1654BT1 M464S1654BT1 16Mx64 16Mx16, 400mil 144-pin M464S1654BT1-L1H M464S1654BT1-L1L

    k4s561632

    Abstract: 1M x 16-Bit x 4 Banks synchronous sRAM omap gpio k4s561632 application note interrupts of arm9 OMAP5910
    Text: Application Report SPRA888 – January 2003 OMAP5910 DSP External Memory Performance Jim Patterson North America DSP Applications ABSTRACT The DSP subsystem of the OMAP5910 can access the 192K bytes of OMAP5910 internal RAM and memory external to the OMAP5910 device, in addition to the 80K x 16 bits of DSP


    Original     		PDF SPRA888 OMAP5910 k4s561632 1M x 16-Bit x 4 Banks synchronous sRAM omap gpio k4s561632 application note interrupts of arm9

    M464S3254BT1-L1L

    Abstract: M464S3254BT1 M464S3254BT1-L1H
    Text: PC100 SODIMM M464S3254BT1 M464S3254BT1 SDRAM SODIMM 32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S3254BT1 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC100 M464S3254BT1 M464S3254BT1 32Mx64 16Mx16, 400mil 144-pin M464S3254BT1-L1L M464S3254BT1-L1H

    inductor 470uH

    Abstract: PXA255 jtag flash programming gp741 RP14B PXA255 Single Board Computer AUDIO JACK 3.5MM RP17B PXA255 intel 27869 intel PXA255
    Text: Intel Intel® PXA255 Processor Design Guide March, 2003 Order Number: 278694-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN


    Original     		PDF PXA255 8Mx16 100Kohms C186B 015uF 28F128 inductor 470uH PXA255 jtag flash programming gp741 RP14B PXA255 Single Board Computer AUDIO JACK 3.5MM RP17B intel 27869 intel PXA255

    R362B

    Abstract: R113B C307B C245B C268B r272b CONN-HEADER 3 pos u78b gp741 BT 217
    Text: Intel PXA26x Processor Family Design Guide — Revision 1.0 October 2002 Order Number: 278639-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN


    Original     		PDF PXA26x nPIOIS16 09Sept02 DCPXA26x DCPXA26x R362B R113B C307B C245B C268B r272b CONN-HEADER 3 pos u78b gp741 BT 217

    Untitled

    Abstract: No abstract text available
    Text: M464S3254BT1 PC133 SODIMM Revision History Revision 0 May, 2000 - PC133 First Published. Revision 0.1 (Sep. 2000) -Typo error corrections at Package dimensions. Rev. 0.1 Sep. 2000 M464S3254BT1 PC133 SODIMM M464S3254BT1 SDRAM SODIMM 32Mx64 SDRAM SODIMM based on 16Mx16,4Banks,8K Refresh,3.3V Synchronous DRAMs with SPD


    Original     		PDF M464S3254BT1 PC133 M464S3254BT1 32Mx64 16Mx16

    pc66 march 1999 standards

    Abstract: No abstract text available
    Text: SERIAL PRESENCE DETECT PC133 SODIMM PC133 Unbuffered SDRAM SODIMM 144pin SPD Specification Rev. 1.2 March. 2000 Rev. 1.2 March. 2000 SERIAL PRESENCE DETECT PC133 SODIMM • Revision History [Revision 0.0] Oct. 11, 1999 Jedec based PC133 SODIMM SPD Published.


    Original     		PDF PC133 144pin) byte62) 128Mb C-die/256Mb M464S0424CT1-L75/C75 M464S0424DT1-L75/C75 pc66 march 1999 standards

    HC2500

    Abstract: rc73l2 RNA4A RC0402 GAL-5 MIC29152BU K4S561632B-TC75 GRM39X7R104J016AD 0603YC104JAT2A 293D476X9016D2T
    Text: # Board Station BOM file # date : Friday January 24, 2003; 13:5:20:00 PM # Variant : No_Stuff Valis Rev. X3 BOM Updated on 04/01/03 For 755 Processor Build Only. Add wire to C65 side faceing U8 to R88 via on Back Side. ITEM_NO COMPANY PART NO. GEOMETRY COUNT DESCRIPTION


    Original     		PDF 05085C104MA11A cc0508 0603YC104JAT2A cc0603 218-8LPST 293D476X9016D2T plug2x32 som16 cct7343 ieee1386 HC2500 rc73l2 RNA4A RC0402 GAL-5 MIC29152BU K4S561632B-TC75 GRM39X7R104J016AD 0603YC104JAT2A 293D476X9016D2T

    M366S1654BTS-C75

    Abstract: M366S1654BTS K4S561632B-TC75
    Text: M366S1654BTS PC133 Unbuffered DIMM Revision History Revision 0.0 Oct., 2000 • PC133 first published. REV. 0 Oct. 2000 M366S1654BTS PC133 Unbuffered DIMM M366S1654BTS SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF M366S1654BTS PC133 M366S1654BTS 16Mx64 16Mx16, M366S1654BTS-C75 K4S561632B-TC75

    K4S561632B

    Abstract: M464S1654BT2 M464S1654BT2-L75
    Text: M464S1654BT2 PC133 SODIMM Revision History Revision 0 Oct. 2000 -PC133 First Published. Rev. 0.0 Oct. 2000 M464S1654BT2 PC133 SODIMM M464S1654BT2 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16,4Banks,8K Refresh 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION


    Original     		PDF M464S1654BT2 PC133 -PC133 M464S1654BT2 16Mx64 16Mx16 K4S561632B M464S1654BT2-L75

    105-1089-00

    Abstract: C26C31 BI HM00 motorola c100 CBGA360 MNR14 TSSOP48 outline TSSOP48 AMP 120527-1 st c102
    Text: # Board Station BOM file # date : Thursday November 15, 2001;10:45:25 AM # Variant : No_Stuff REFERENCE C17 C1 C5 C47 C48 C49 C50 C51 C52 C53 C54 C55 C56 C6 C2 C3 C4 C16 C58 C59 C60 C61 C63 C64 C65 C66 C68 C69 C70 C72 C73 C74 C75 C77 C78 C79 C80 C97 C98 C99 C100 C101 C102


    Original     		PDF 05085C103MA11A 05085C104MA11A cc0508 0603YC103JAT2A 0603YC104JAT2A RM73B1JT101J RM73B1JT102J rc0603 105-1089-00 C26C31 BI HM00 motorola c100 CBGA360 MNR14 TSSOP48 outline TSSOP48 AMP 120527-1 st c102