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    J108 - TRANSISTOR Search Results

    J108 - TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    J108 - TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor j109

    Abstract: transistor dg sot-23 J109 J110 MMBFJ108 PN2222N CBVK741B019 F63TNR J108 J108-110
    Text: J108 / J109 / J110 / MMBFJ108 MMBFJ108 J108 J109 J110 G S SOT-23 D Mark: I8 G S TO-92 NOTE: Source & Drain are interchangeable D N-Channel Switch This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 58.


    Original     		PDF MMBFJ108 OT-23 transistor j109 transistor dg sot-23 J109 J110 MMBFJ108 PN2222N CBVK741B019 F63TNR J108 J108-110

    transistor j109

    Abstract: MMBFJ108 J108 - TRANSISTOR I8 SOT23 CBVK741B019 F63TNR J108 J108-110 J109 J110
    Text: J108 / J109 / J110 / MMBFJ108 MMBFJ108 J108 J109 J110 G S SOT-23 D Mark: I8 G S TO-92 NOTE: Source & Drain are interchangeable D N-Channel Switch This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 58.


    Original     		PDF MMBFJ108 OT-23 transistor j109 MMBFJ108 J108 - TRANSISTOR I8 SOT23 CBVK741B019 F63TNR J108 J108-110 J109 J110

    CRS15

    Abstract: J110 J108 J109 Silicon Junction FETs transistor j109 equivalent
    Text: DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon junction FETs


    Original     		PDF

    J108

    Abstract: J109 J110 Silicon Junction FETs J109 7
    Text: DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon junction FETs


    Original     		PDF

    transistor j109

    Abstract: transistor j109 equivalent J108 J109 SMPJ108 SMPJ109 tOD22 j109 transistor
    Text: Databook.fxp 1/14/99 1:02 PM Page B-49 B-49 01/99 J108, J109 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Choppers ¥ Commutators ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


    Original     		PDF NJ450 226AA SMPJ108, SMPJ109 transistor j109 transistor j109 equivalent J108 J109 SMPJ108 SMPJ109 tOD22 j109 transistor

    PN5432

    Abstract: CBVK741B019 F63TNR J108 PN2222N PN5433 PN5434
    Text: PN5432 / PN5433 / PN5434 PN5432 PN5433 PN5434 G S TO-92 D N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 58. See J108 for characteristics. Absolute Maximum Ratings*


    Original     		PDF PN5432 PN5433 PN5434 PN5432 PN5433 CBVK741B019 F63TNR J108 PN2222N PN5434

    Untitled

    Abstract: No abstract text available
    Text: N-Channel MOSFET Transistors Part No. Drain-Source On-State Braekdown DS Current Voltage Static DS Resistance Part No. MOSFET Drain-Source On-State Braekdown DS Current Voltage Static DS Resistance Package Bulk/Reel BVDSS V ID(ON)(A) RDS(ON)(Ω) BVDSS(V)


    Original     		PDF 2N7000 2N7000A IRF510 IRF610 IRF620 IRF624 IRF630 IRF633 IRF634 IRFZ14

    NJ450

    Abstract: D45 TRANSISTOR IFN363 IFN146 IFN147 f36 transistor J108 J110 J110A 2SK363
    Text: Databook.fxp 1/13/99 2:09 PM Page F-36 F-36 01/99 NJ450 Process Silicon Junction Field-Effect Transistor ¥ LOW R on Switch ¥ Low-Noise, High Gain Amplifier S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts


    Original     		PDF NJ450 2SK363 IFN146, IFN147 IFN363 J110A D45 TRANSISTOR IFN363 IFN146 IFN147 f36 transistor J108 J110 J110A 2SK363

    J177. P-CHANNEL. TO-92

    Abstract: 2N4393 2N5021 2N4856 2N5116 datasheet for transistor 2n4860 interfet J174 smp4856 2N4391
    Text: Databook.fxp 1/14/99 11:30 AM Page B-13 B-13 01/99 2N4391, 2N4392, 2N4393 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Low On Resistance Analog Switches ¥ Choppers ¥ Commutators 2N4391 At 25°C free air temperature


    Original     		PDF 2N4391, 2N4392, 2N4393 2N4391 2N4392 O-226AB O-92/18) J177. P-CHANNEL. TO-92 2N4393 2N5021 2N4856 2N5116 datasheet for transistor 2n4860 interfet J174 smp4856 2N4391

    Diode j106

    Abstract: SSP6N60 TD13002 BUD620 BUF620 BUF640A BUF642 BUF644 TD13003 TD13004
    Text: Switching Power Transistors Part No. and Polarity NPN Operating Temperature: -65 o C to 150oC Maximum Ratings P TOT @ Tcase PNP IC VCES Characteristics V CEO tf @ IC hFE @ IC & VC E VCE SAT @ I C and h FE (W) (°C) (A) (V) (V) (µs) (A) (A) (V) (V) (A) BUD620


    Original     		PDF 150oC BUD620 TD13003 TD13004 TD13004D1 IRF730 IRF740 IRFZ14 IRFZ24 IRFZ34 Diode j106 SSP6N60 TD13002 BUD620 BUF620 BUF640A BUF642 BUF644 TD13003 TD13004

    2SK170BL

    Abstract: 2SK508 tcxo philips 4322 BFG135 power amplifier for 900Mhz 2SK147BL 2sk162 hitachi 2sk170y toshiba 2sk170bl BF1009SW philips rf manual
    Text: 4th edition RF Manual product & design manual for RF small signal discretes Page: 1 Philips RF Manual product & design manual for RF small signal discretes 4 edition March 2004 th / discretes/documentation/rf_manual


    Original     		PDF BF1107/8 BGA2715-17 BGA6x89 2SK170BL 2SK508 tcxo philips 4322 BFG135 power amplifier for 900Mhz 2SK147BL 2sk162 hitachi 2sk170y toshiba 2sk170bl BF1009SW philips rf manual

    transistor 2N3563

    Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
    Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .


    Original     		PDF

    2SK163

    Abstract: BB142 BF245c SMD BF245A spice ON4831-2 BB184LX BF1109 spice bf998 2SK508 BFG480W
    Text: RF!๮֩!‫ڼ‬7Ӳ RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2005౎11ሆ ݀քන೺;!!2005౎11ሆ! ࿔ॲຩႾࡽǖ!9397 750 15371 Henk Roelofs-!ޭጺ֋!&!ጺঢ়૙!RFׂ೗ Ⴞჾ ࣌ᆓ۩ለ‫ڼ‬7ӲRF๮֩ă࿢்ඓ႑Ljएᇀᆌᆩ႑တ‫ڦ‬ඇ঍ࢻ๕֡ፕႎঋ‫ࣷॽۅ‬๑౞इᅮ‫ݩ‬റLj࿢்‫ڦ‬


    Original     		PDF TZA30x6 2SK163 BB142 BF245c SMD BF245A spice ON4831-2 BB184LX BF1109 spice bf998 2SK508 BFG480W

    2SK163 spice model

    Abstract: BF256B spice model bf245b spice model TRANSISTOR SMD wb BGY88 spice model bf1202 Microwave GaAs FET catalogue 2sk163 BSS83 spice model BAW 62 SOT23
    Text: RF Manual 7 edition th Application and design manual for RF products November 2005 date of release: November 2005 document order number: 9397 750 15371 Henk Roelofs,Vice President & General Manager RF Products Introduction Welcome to the 7th edition of our RF Manual. We knew that the new focus of applicationbased information with fully interactive operation would pay off, but the appreciation expressed


    Original     		PDF

    J107

    Abstract: MOTOROLA J110
    Text: MOTOROLA SC XSTRS/R F 1 2 E D I t i3 t i7 a S M 0 G f l b ? a f l fl | * J1 0 7 thru J110 CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Sym bol Value Drain-Gate Voltage VDG -2 5 Vdc Gate-Source Voltage Vq S -2 5 Vdc Rating Unit 1 Drain Gate Current


    OCR Scan     		PDF O-226AA) J107 MOTOROLA J110

    Bsv80

    Abstract: 2N4092 2N4392 Philips J176 PMBF PMBFJ111 PMBFJ174
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs JUNCTION FETS FOR SWITCHING OVERVIEW PRODUCT DATA: PAGES 39-40 leaded N/P TO-18 surface-mount TO-72 TO-92 SOT23 SOT 143 SOT223 N BSV78


    OCR Scan     		PDF BSV78 BSV79 BSV80 BSR56 BSR57 BSR58 PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 Bsv80 2N4092 2N4392 Philips J176 PMBF PMBFJ174

    BF991

    Abstract: BF545 BFT46 PMBFJ310 PMBFJ177 PMBFJ211 BF908R BF98 PMBFJ111 PMBFJ174
    Text: Philips Semiconductors Small-signal Field-effect Transistors Index Types added to the range since the last issue of Handbook SC07 1996 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE 2N5484 80 BF909R 165 J174 288 2N5485


    OCR Scan     		PDF 2N5484 2N5485 2N5486 BF245A BF245B BF245C BF410A BF410B BF410C BF410D BF991 BF545 BFT46 PMBFJ310 PMBFJ177 PMBFJ211 BF908R BF98 PMBFJ111 PMBFJ174

    bfw11 jfet

    Abstract: jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960
    Text: Small Signal Leaded Devices Field Effect Transistors J-FET cont. ±V DS •d s s -vh{P) GS Pkg (V) (mA) (V) T O -18 T O -18 T O -18 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-18 TO-18 TO-18 TO-72 TO-72 TO-72 TO-72


    OCR Scan     		PDF 2N4859 2N4860 2N4861 BF245A/0 BF245A BF245B BF245C BF247A BF247B BF247C bfw11 jfet jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960

    mpf3002

    Abstract: MPF4093 Motorola 2N4393 2N4393 MOTOROLA MPF4092 2N3971 2N5463 MOTOROLA 2N5639 MOTOROLA MPF4392 BF246A
    Text: FIELD-EFFECT TRANSISTORS continued Switches and Choppers (continued) N-Channel JFETs rds(on) Package TO - Device (Q) MAX VGS(0ff) •d s s 0/) (m A) V(BR)GSS v (BR)GDO ^ is s ^rss *on *off @ (D (HA) MIN MAX MIN MAX (V) MIN (pF) MAX (pF) MAX (ns) MAX (ns)


    OCR Scan     		PDF 2N4860A 2N4857 2N4860 N4092 MPF4092 2N4392 MPF4392 2N4858A 2N4861A 2n3909 mpf3002 MPF4093 Motorola 2N4393 2N4393 MOTOROLA 2N3971 2N5463 MOTOROLA 2N5639 MOTOROLA BF246A

    BF247A

    Abstract: bs250 bs170 PMBFJ111 PMBFJ174 BSR56 BFT46 PHC21025 BF909WR
    Text: Philips Semiconductors Small-signal Field-effect Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC07 1994 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE 150 BS170 347 150


    OCR Scan     		PDF BS170 BS208 BF904 BF904R BF904WR BS250 BC264D BF908 BSD12 BF245A BF247A bs250 bs170 PMBFJ111 PMBFJ174 BSR56 BFT46 PHC21025 BF909WR

    2N4092

    Abstract: PMBFJ112 bsv79 PMBFJ111
    Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs N-CHANNEL JUNCTION FETS FOR SWITCHING ratings type number ± v DS max. V characteristics 'g max. (mA) min. (mA) LEADED TYPES BSV78


    OCR Scan     		PDF OT223 OT223 BSR56 BSR57 BSR58 PMBF4391 PMBF4392 PMBF4393 PMBFJ108 2N4092 PMBFJ112 bsv79 PMBFJ111

    pn5114

    Abstract: PN5432
    Text: ,HARRIS SEMICOND SECTOR 4302271 QQ15bqa H M HAS 27E » T-33'ZS Switching Transistors Continued Junction FETs — N-Channel (Continued) PART NUMBER rDS(ON) n PACKAGE * Max vP V Min Max Iq ss pA Max BVqs S V Min •iHOFF) pA Max •dss mA Min Max *ap ns Max


    OCR Scan     		PDF QQ15bqa PN4091 PN4092 PN4093 2N3382 2N5018 2N5019 RS-468) pn5114 PN5432

    U1898

    Abstract: No abstract text available
    Text: F8 9-97 Small Outline Surface Mount Package Devices N ^H A N N E rsÌLÌcO N T Ù N C T ÌO N T ÌE L D -E F F E C T TRANSISTORS Id s s V g s (O FF ) •g s s BVGSS Device Type Conditions Limits Min @IG Max @Vqs Min Max VDS M m (nA) (V) (V) (V) (V) Id (nA)


    OCR Scan     		PDF BF244C BF246A BF246B BF246C BF256A NJ132 NJ26L U1898

    PN4416

    Abstract: BF98 BF991 BF998 BF909WR BF1105WR
    Text: Philips Semiconductors Small-signal field-effect transistors Selection guide N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER PACKAGE ±VDs V •g (mA) •d s s iytsl (mS) ~V(P)GS (V) min - max (mA) Crs (PF) PAGE General purpose analog applications


    OCR Scan     		PDF PMBFJ210 PMBFJ211 PMBFJ212 BF245A BF245B BF245C BF545A BF545B BF545C BF556A PN4416 BF98 BF991 BF998 BF909WR BF1105WR