Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    INTERFET Search Results

    INTERFET Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3369 InterFET N-Channel JFETS GENERAL - PURPOSE DEVICE TYPES Scan PDF
    2N3370 InterFET N-Channel JFETS GENERAL - PURPOSE DEVICE TYPES Scan PDF
    2N3458 InterFET N-Channel JFETS GENERAL - PURPOSE DEVICE TYPES Scan PDF
    2N3459 InterFET N-Channel JFETS GENERAL - PURPOSE DEVICE TYPES Scan PDF
    2N3460 InterFET N-CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES Scan PDF
    2N3821 InterFET N-Channel silicon junction field-effect transistor Original PDF
    2N3822 InterFET N-Channel silicon junction field-effect transistor Original PDF
    2N3823 InterFET N-Channel silicon junction field-effect transistor Original PDF
    2N3824 InterFET N-Channel silicon junction field-effect transistor Original PDF
    2N3954 InterFET N-Channel dual silicon junction field-effect transistor Original PDF
    2N3955 InterFET N-Channel dual silicon junction field-effect transistor Original PDF
    2N3955 InterFET N-Channel Dual Silicon Junction Field-Effect Transistor Original PDF
    2N3956 InterFET N-Channel dual silicon junction field-effect transistor Original PDF
    2N3957 InterFET N-Channel dual silicon junction field-effect transistor Original PDF
    2N3957 InterFET N-Channel Dual Silicon Junction Field-Effect Transistor Original PDF
    2N3958 InterFET N-Channel dual silicon junction field-effect transistor Original PDF
    2N3958 InterFET N-Channel Dual Silicon Junction Field-Effect Transistor Original PDF
    2N3967 InterFET N-Channel JFETS GENERAL - PURPOSE DEVICE TYPES Scan PDF
    2N3967A InterFET N-Channel JFETS GENERAL - PURPOSE DEVICE TYPES Scan PDF
    2N3968 InterFET N-Channel JFETS GENERAL - PURPOSE DEVICE TYPES Scan PDF
    ...

    INTERFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B1112

    Abstract: ADC10HT 1-6H005 BIT111 BN10
    Text: 1-6H005 12-Bit AID Converter 8-94 ITAC HYBRID TECHNOLOGY InterFET Features f-_ _-oBipolar Offset Parallel Digital Output :!!!:C1 }j "i f-oRef In L l1J iii!! 5:! B 12-81t SUccessive Approximation Register SAR Ref Out Input ""'''.I\/'-O L.-o JRange Select


    Original
    PDF 1-6H005 12-Bit 12-81t B1112 B1112 ADC10HT BIT111 BN10

    2SK105 Datasheet

    Abstract: 2SK105 2SK59 to-226aa 2sk105 jfet 2SK40 TO226AA 2SK17 2SK113 2d201
    Text: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions


    Original
    PDF 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 2SK105 Datasheet 2SK105 2SK59 to-226aa 2sk105 jfet 2SK40 TO226AA 2SK17 2SK113 2d201

    Application Papers

    Abstract: No abstract text available
    Text: Databook.fxp 1/13/99 2:10 PM Page H-13 H-13 01/99 Titles of Device Application Papers Abstracts and complete text available from InterFET upon request JFET for Completely Depleted High Resistivity Silicon V. Radeka, P. Rehak, S. Rescia Brookhaven National


    Original
    PDF

    2sk152 equivalent

    Abstract: IFN152 INTERFET 2SK152 2SJ44 IFP44 2SK113 10 V jfet databook 2SK363
    Text: Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P


    Original
    PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2sk152 equivalent IFN152 INTERFET 2SK152 2SJ44 IFP44 2SK113 10 V jfet databook 2SK363

    2SK105 DGS

    Abstract: 2SK105 V6010 2sj44
    Text: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions


    Original
    PDF 2SK17 IFN17 2SK40 IFN40 2SK59 IFN59 2SK105 IFN105 O-226AA 2SK105 DGS V6010 2sj44

    2SK146

    Abstract: 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2SK147 2sk152 equivalent Japanese Transistor
    Text: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions


    Original
    PDF 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 2SK146 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2SK147 2sk152 equivalent Japanese Transistor

    2SK146

    Abstract: 2SK147 equivalent 2sk146 datasheet 2sk146 equivalent 2SK147 IFN152 IFN146 2SK113 IFP44 2SJ44
    Text: Databook.fxp 1/13/99 2:09 PM Page D-3 D-3 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P


    Original
    PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2SK146 2SK147 equivalent 2sk146 datasheet 2sk146 equivalent 2SK147 IFN152 IFN146 2SK113 IFP44 2SJ44

    NPD5564

    Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
    Text: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership


    Original
    PDF IntegraU404 LSU405 LSU406 LS841 LS842 LS421 LS422 LS423 LS424 NPD5564 NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638

    Application Notes

    Abstract: matched pair JFET N CHANNEL jfet Low Noise Audio Amplifier jfet transistor for VCR "voltage controlled resistor" JFET APPLICATIONS igfet jfet differential transistor jfet p channel switch FET differential amplifier circuit
    Text: Databook.fxp 1/13/99 2:09 PM Page H-2 H-2 01/99 Junction Field Effect Transistors InterFET Application Notes Introduction T he field effect transistor was actually conceived before the more familiar bipolar transistor. Due to limited technology and later the


    Original
    PDF

    interfet

    Abstract: No abstract text available
    Text: 8-94 1-6HOOl ITAC HYBRID TECHNOLOGY InterFET Features • - 55°C to + 200°C Specifications • 300nA Max Input Bias Current at + 200°C ± 6 mV Max Input Offset Voltage at + 200°C ± 5 IJVJOC Typical Input Offset Voltage Coefficient 12 MHz Bandwidth Typical


    Original
    PDF 300nA 1-6H001 100kn 100mV) interfet

    2sk152 equivalent

    Abstract: 2SJ44 2SK113 2SK152
    Text: _ Japanese Equivalent JFET Types SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Process Unit Limit V M in Parameters


    OCR Scan
    PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L 2sk152 equivalent 2SJ44 2SK113 2SK152

    2SK105

    Abstract: 2SK59 SGD 2SK40 2SK40 SGD 2SK17 2SK105 E interfet 2SK59 2SK17 SGD IFN105
    Text: E2 9-97 Jagranes^guivalenUF^n^ges SILICON JUNCTION FIELD-EFFECT TRANSISTORS Japanese 2SK17 2SK40 2SK59 2SK105 InterFET IFN17 IFN40 IFN59 IFN105 Process NJ16 NJ16 NJ16 NJ16 Unit Limit N N N N Channel Channel Channel Channel V M in -2 0 -5 0 -3 0 -5 0 nA Max


    OCR Scan
    PDF 2SK17 2SK40 2SK59 2SK105 IFN17 IFN40 IFN59 IFN105 2SK59 SGD 2SK40 SGD 2SK105 E interfet 2SK17 SGD IFN105

    Untitled

    Abstract: No abstract text available
    Text: 9-97 E3 ^ ^ ^ ^ ^ ^ ^ ^^ ^ Jaj> an est^ c|u ivalen ^ F ^ n h £|jes SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit


    OCR Scan
    PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L

    2SK105

    Abstract: 2SK105 F aX 010 2SK105 E 2sk40 2sk59
    Text: 9-97 E2 Ja g a n e s ^ tju iv a le rv U F F T ^ g e ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ SILICON JUNCTION FIELD-EFFECT TRANSISTORS Japanese 2SK17 2SK40 2SK59 2SK105 InterFET IFN17 IFN40 IFN59 IFN105 Process NJ16 NJ16 NJ16 NJ16 N N N N Channel Channel Channel Channel -2 0


    OCR Scan
    PDF 2SK17 IFN17 2SK40 IFN40 2SK59 IFN59 2SK105 IFN105 2SK105 F aX 010 2SK105 E

    j174 transistor

    Abstract: No abstract text available
    Text: B 52 9-97 J 1 7 4 , J 1 75 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • CHOPPERS • COMMUTATORS • AN ALO G SWITCHES Absolute maximum ratings at T* = 2 5'C Reverse Gate Source & Reverse Gate Drain Voltage - 30 V Continuous Forward Gate Current


    OCR Scan
    PDF T0-226 000G772 j174 transistor

    Untitled

    Abstract: No abstract text available
    Text: B 47 9 -9 7 IFN5911, IFN5912 N-CHANNEL DUAL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25eC icicpe * u « n r a . » n m .-n -n r.n -. . . Continuous Forward Gate Current Continuous Device Power Dissipation • WIDEBAND DIFFERENTIAL AMPLIFIERS


    OCR Scan
    PDF IFN5911, IFN5912 FN5911 IFN9912 NJ30L 00G07b7

    Untitled

    Abstract: No abstract text available
    Text: B 33 9 -9 7 IF1801 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE, HIGH GAIN AM PLIFIER Absolute maximum ratings = TA at 25‘ C Reverse Gate Source Voltage & Gate Drain Voltage - 20 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation


    OCR Scan
    PDF IF1801 NJ1800DL

    Untitled

    Abstract: No abstract text available
    Text: B 48 9 -9 7 IFN6449, IFN6450 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR HIGH VOLTAGE Absolute maximum ratings at T* = 25°C IFN6449 Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation


    OCR Scan
    PDF IFN6449, IFN6450 IFN6449 46BbBÃ 00007bÃ

    2N3994

    Abstract: No abstract text available
    Text: B8 9 -9 7 2N3994, 2N3994A P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • CHOPPERS • HIGH SPEED COMMUTATORS Absolute maximum ratings at Ta = 25°C Reverse Gate Source Voltage Reverse Gate Drain Voltage 25 V 25 V Continuous Forward Gate Current Continuous Device Power DIssipation


    OCR Scan
    PDF 2N3994, 2N3994A 2N3994 2N3994

    S0014

    Abstract: No abstract text available
    Text: inter f e t corp t,SE D • Mfl2bôflfl OO O O b O S 074 ■ IF C C 5 IF210 6 N-CHANNEL SILICON ENHANCEMENT MODE VERTICAL DMOS FET Absolute maximum ratings at TA = 25°C Drain Source Voltage Continuous Drain Current Gate Source Voltage Maximum Power Dissipation


    OCR Scan
    PDF IF210 IF2106 S0014

    Untitled

    Abstract: No abstract text available
    Text: F4 9-97 Small O utline Surface M ount Package Devices N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS BVgsS Device Type >GSS VgS(OFF) Limits Conditions Min Max Vos to Min Max @Vds (mA) (mA) (V) Min @Ig Max @VGS (V) (UA) (nA) (V) SMP 4340 SMP4341 SMP 4391


    OCR Scan
    PDF SMP4341 SMP245

    2N5396

    Abstract: 2n5397
    Text: 9-97 B 20 2N5397, 2N5398 N -C H A N N E L S IL IC O N J U N C T IO N FIELD-EFFECT T R A N SIST O R LOW NOISE HIGH POWER GAIN HIGH TRANSCONDUCTANCE MIXERS OSCILLATORS VHF AMPLIFIERS Absolute maximum ratings at T* * 25"C Reverse Gate Source & Reverse Gate Drain Voltage


    OCR Scan
    PDF 2N5397, 2N5398 2N5397 000074G 2N5396 2n5397

    Untitled

    Abstract: No abstract text available
    Text: D6 9 -9 7 J553, J554, J555, J556, J557 CURRENT REGULATOR DIODE • CURRENT REGULATION • CURRENT LIMITING • BIASING Absolute maximum ratings at TA = 25'C. Peak Operating Voltage Continuous Reverse Gate Current Continuous Device Power Dissipation 50 V 50 mA


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: 9 -9 7 D 2 DPAD1, DPAD2, PPAD5, DPAD10 DUAL PICO-AMP DIODE • H IGH IMPEDANCE PROTECTION CIRCUITS Absolute maximum ratings at TA = 25‘ C Continuous Forward Gate Current 50 mA Storage Temperature Range DPAD1 At 25°C free air temperature: Min Electrical Characteristics


    OCR Scan
    PDF DPAD10