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    Nexperia PMBF170,215

    MOSFET N-CH 60V 300MA TO236AB
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    DigiKey PMBF170,215 Reel 234,000 3,000
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    PMBF170,215 Cut Tape 3,748 1
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    Mouser Electronics PMBF170,215 70,858
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    Verical PMBF170,215 42,000 3,000
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    PMBF170,215 11,448 439
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    Arrow Electronics PMBF170,215 42,000 6 Weeks 3,000
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    PMBF170,215 15,000 2,786
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    PMBF170,215 12,785 1
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    PMBF170,215 Cut Strips 11,448 6 Weeks 439
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    PMBF170,215 3,000 6 Weeks 3,000
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    Quest Components PMBF170,215 200
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    Rochester Electronics PMBF170,215 96,000 1
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    TTI PMBF170,215 Reel 75,000 3,000
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    TME PMBF170,215 5,560 10
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    New Advantage Corporation PMBF170,215 210,000 1
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    Nexperia PMBF170,235

    MOSFET N-CH 60V 300MA TO236AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PMBF170,235 Reel 60,000 10,000
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    PMBF170,235 Cut Tape 14,994 1
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    Mouser Electronics PMBF170,235 31,768
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    TTI PMBF170,235 Reel 20,000
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    Flip Electronics PMBF4391

    JFET N-CH 40V TO236AB
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    DigiKey PMBF4391 Reel 21,535 500
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    Switchcraft Conxall VMPMBF

    ADAPTER, MICRO BNC TO MIDSIZE WE
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    DigiKey VMPMBF Bulk 20 1
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    Mouser Electronics VMPMBF 10
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    Sager VMPMBF 10
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    Switchcraft Conxall VMMPMBF

    ADAPTER, MICRO BNC TO MICRO WECO
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    DigiKey VMMPMBF Bulk 20 1
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    Mouser Electronics VMMPMBF 9
    • 1 $23.89
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    TTI VMMPMBF Bulk 10 1
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    Sager VMMPMBF 10
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    Find more PMBF price and stock on Findchips.com

    PMBF Datasheets (174)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PMBF107 Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor Original PDF
    PMBF107 Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor Original PDF
    PMBF107 Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor Original PDF
    PMBF107 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    PMBF107T/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    PMBF170 Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor Original PDF
    PMBF170 Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF
    PMBF170 Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor Original PDF
    PMBF170 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    PMBF170-03 Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF
    PMBF170,215 NXP Semiconductors N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 5000@10V5300@4.5V mOhm; VDSmax: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    PMBF170,235 NXP Semiconductors N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 5000@10V5300@4.5V mOhm; VDSmax: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
    PMBF170/DG,215 NXP Semiconductors PMBF170/DG - N-channel TrenchMOS intermediate level FET, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel Original PDF
    PMBF170T/R NXP Semiconductors N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 5000@10V5300@4.5V mOhm; VDSmax: 60 V Original PDF
    PMBF170TR Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF
    PMBF170T/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    PMBF4391 NXP Semiconductors PMBF4391 - N-channel FETs - CRS: 3.5 pF; IDSS: 50 to 150 mA; IDSS max.: 150 mA; IDSS min.: 50 mA; IG: 50 mA; RDS(on): 30 Ohm; toff: 20 ns; ton: 15 ns; -V(P)GS: 4 to 10 V; V(P)GS: 4 V; V(P)GS: 10 V; VDSmax: 40 V Original PDF
    PMBF4391 Philips Semiconductors N-channel FETs Original PDF
    PMBF4391 Philips Semiconductors N-Channel FET Original PDF
    PMBF4391 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    ...

    PMBF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBB691

    Abstract: MBB076 MAR 745 TRANSISTOR MBB692 MSB003 PMBF107
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBF107 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b 1998 Mar 06 Philips Semiconductors Product specification


    Original     		PDF M3D088 PMBF107 SC13b SCA54 135108/00/03/pp8 MBB691 MBB076 MAR 745 TRANSISTOR MBB692 MSB003 PMBF107

    13006 TRANSISTOR

    Abstract: transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D
    Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 01 — 11 May 2004 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken


    Original     		PDF PMBFJ620 OT363 MSC895 13006 TRANSISTOR transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D

    Untitled

    Abstract: No abstract text available
    Text: PMBFJ110 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25.0 V(BR)GSS (V)25.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)3.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V).5


    Original     		PDF PMBFJ110

    Untitled

    Abstract: No abstract text available
    Text: PMBFJ310 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25.0 V(BR)GSS (V)25.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V)2.0


    Original     		PDF PMBFJ310

    Untitled

    Abstract: No abstract text available
    Text: PMBFJ176 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30.0 V(BR)GSS (V)30.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)20.0 V(GS)off Min. (V)1.0


    Original     		PDF PMBFJ176

    Untitled

    Abstract: No abstract text available
    Text: PMBFJ111 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)40.0 V(BR)GSS (V)40.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V)3.0


    Original     		PDF PMBFJ111

    PMBFJ620,115

    Abstract: No abstract text available
    Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken


    Original     		PDF PMBFJ620 OT363 PMBFJ620,115

    pmbfj310

    Abstract: No abstract text available
    Text: 3 SO T2 PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION


    Original     		PDF PMBFJ308; PMBFJ309; PMBFJ310 PMBFJ308 pmbfj310

    PMBFJ108

    Abstract: MAM385 PMBFJ109 PMBFJ110
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs


    Original     		PDF PMBFJ108; PMBFJ109; PMBFJ110 PMBFJ108) MAM385 PMBFJ108 MAM385 PMBFJ109 PMBFJ110

    pmbfj174

    Abstract: marking p6s P6S SMD
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification P-channel silicon field-effect transistors


    Original     		PDF PMBFJ174 MAM386 marking p6s P6S SMD

    MRC165

    Abstract: PMBF4416 PMBF4416A MRC168 mrc160
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBF4416; PMBF4416A N-channel field-effect transistor Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A


    Original     		PDF PMBF4416; PMBF4416A MAM385 PMBF4416: PMBF4416A: MRC165 PMBF4416 PMBF4416A MRC168 mrc160

    Untitled

    Abstract: No abstract text available
    Text: PMBFJ108 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25.0 V(BR)GSS (V)25.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)3.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V)3.0


    Original     		PDF PMBFJ108

    Untitled

    Abstract: No abstract text available
    Text: PMBFJ113 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)40.0 V(BR)GSS (V)40.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V).5


    Original     		PDF PMBFJ113

    Untitled

    Abstract: No abstract text available
    Text: PMBFJ109 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25.0 V(BR)GSS (V)25.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)3.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V)2.0


    Original     		PDF PMBFJ109

    PMBFJ174

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel


    Original     		PDF PMBFJ174 MAM386 R77/02/8

    philips ET-E 60

    Abstract: No abstract text available
    Text: Philips Semiconductors • bbSBTBl D02HQ41 OTB HIAPX AMER PH IL IPS /DISCRETE N-channel field-effect transistors PMBF5484; PMBF5485; PMBF5486 QUICK REFERENCE DATA FEATURES MIN. MAX. UNIT - 25 V PMBF5484 1 5 mA PMBF5485 4 10 mA • Low noise SYMBOL • Interchangeability of drain and


    OCR Scan     		PDF D02HQ41 PMBF5484; PMBF5485; PMBF5486 PMBF5484 PMBF5485 -SOT23 philips ET-E 60

    PMBFJ174

    Abstract: No abstract text available
    Text: bb Sim i 002405b 524 H A P X N APIER P H IL IP S/ D IS CR ET E b?E I> PMBFJ174 to 177 _ J V _ P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in plastic microminiature SOT-23 envelopes. They are intended for application with analogue switches, choppers, commutators etc. using SMD


    OCR Scan     		PDF 002405b PMBFJ174 OT-23 PMBFJ174 RMBFJ174

    pmbfj174

    Abstract: PMBFJ174 to 177 SMD 4B0
    Text: • ^3 3* 1 3 1 D O S H O S b 524 N A PIER P H I L I P S / D I S C R E T E IAPX b?E PMBFJ174 to 177 D J P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in plastic m icrom iniature SOT-23 envelopes. They are intended fo r application w ith analogue switches, choppers, commutators etc. using SMD


    OCR Scan     		PDF PMBFJ174 OT-23 PMBFJ174 7Z94962 PMBFJ174 to 177 SMD 4B0

    SNW-EQ-608

    Abstract: transistor d 1862
    Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES _ PMBF107 PINNING - SOT23 • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTION • High-speed switching 1 • No secondary breakdown. 2 g


    OCR Scan     		PDF SNW-EQ-608, SNW-FQ-302A SNW-FQ-302B. PMBF107 DA763 SNW-EQ-608 transistor d 1862

    Untitled

    Abstract: No abstract text available
    Text: P h ilip s C o m p o n e n t s Data sheet status Product specification date of issue November 1990 PMBF107 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA FEATURES SYM BOL PARAM ETER • Direct interface to C-M O S, TTL,


    OCR Scan     		PDF PMBF107 VCB711 003b2G5 BF107

    field-effect transistor

    Abstract: MRC160 pmbf4416a TRANSISTOR D 471
    Text: Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A FEATURES • Low noise • Interchangeability of drain and source connections • High gain. n DESCRIPTION N-channel symmetrical silicon junction FETs in a surface-mountable


    OCR Scan     		PDF PMBF4416; PMBF4416A MAM385 F4416A PMBF4416 PMBF4416A cPMBF4416A MRC166 field-effect transistor MRC160 TRANSISTOR D 471

    PMBF4416

    Abstract: PMBF4416A
    Text: Philips Semiconductors_ bb.53^31 DDSMOBS 6TT Product specification PMBF4416; PMBF4416A N-channel field-effect transistor N AMER PHILIPS/DISCRETE FEATURES APX b7E J> QUICK REFERENCE DATA • Low noise SYMBOL • Interchangeability of drain and source connections


    OCR Scan     		PDF bb53q31 PMBF4416; PMBF4416A PMBF4416 DD240MD PMBF4416 PMBF4416A

    TRANSISTOR SMD MARKING CODE pKX

    Abstract: TRANSISTOR SMD MARKING CODE DM smd code pKX TRANSISTOR SMD MARKING CODE ld smd transistor marking BL SMD TRANSISTOR MARKING code DD SMD CODE TRANSISTOR JA PMBF170 TRANSISTOR SMD MARKING CODE 2A SMD SOT23 transistor PMBF170
    Text: • bLiSB'm DÜBSÖIO b 7 4 ■ N AMER P H I L I P S / D I S C R E T E APX b7E PMBF170 D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed fo r use as a Surface Mounted Device SMD in thin and thick-film circuits w ith applications in relay, high-speed


    OCR Scan     		PDF PMBF170 200rnA bbS3T31 TRANSISTOR SMD MARKING CODE pKX TRANSISTOR SMD MARKING CODE DM smd code pKX TRANSISTOR SMD MARKING CODE ld smd transistor marking BL SMD TRANSISTOR MARKING code DD SMD CODE TRANSISTOR JA PMBF170 TRANSISTOR SMD MARKING CODE 2A SMD SOT23 transistor PMBF170

    TRANSISTOR code marking 2FI sot23

    Abstract: PMBF107 UCB710 U34 marking 11 sot23
    Text: Philips Components PMBF107 Data sheet status Product specification date of issue November 1990 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA FE A T U R E S SYM BOL PARAM ETER CONDITIONS MAX. UNIT • Direct interface to C-M O S, TTL,


    OCR Scan     		PDF PMBF107 003b20S TRANSISTOR code marking 2FI sot23 PMBF107 UCB710 U34 marking 11 sot23