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    BF98 Price and Stock

    ams OSRAM Group SPL BF98-40-5 (966 +/-2NM)

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    ams OSRAM Group SPL BF98-50-5 (969 +/-2NM)

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    ams OSRAM Group SPL BF98-40-5 (971 +/-2NM)

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    BF98 Datasheets (70)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BF980 Philips Semiconductors Silicon N-Channel Dual gate MOSFET Original PDF
    BF980 Unknown Cross Reference Datasheet Scan PDF
    BF980 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF980 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF980 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BF980 Unknown Silicon N-channel dual gate MOSFET Scan PDF
    BF980A Philips Semiconductors Silicon N-Channel dual gate MOSFET Original PDF
    BF980A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF980A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF980A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BF980A Unknown Silicon N-Channel dual gate MOSFET Scan PDF
    BF980A Philips Semiconductors SILICON N-CHANNEL DUAL GATE MOS-FET Scan PDF
    BF980A Philips Semiconductors SILICON N-CHANNEL DUAL GATE MOS-FET Scan PDF
    BF981 Philips Semiconductors Silicon N-Channel Dual Gate MOS FET Original PDF
    BF981 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BF981 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BF981 Unknown Cross Reference Datasheet Scan PDF
    BF981 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF981 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF981 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    BF98 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF989

    Abstract: MOSFET 4466 BP317 SCA52 dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF989 FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF989 OT143 SCA52 117061/00/02/pp8 BF989 MOSFET 4466 BP317 SCA52 dual-gate

    BF988

    Abstract: BF988A BF988B
    Text: BF988 Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF- and UHF- tuners. Features D D D D D High AGC-range


    Original     		PDF BF988 BF988 D-74025 08-Jul-99 BF988A BF988B

    PCF8548

    Abstract: cof lcd BF9864A BF986
    Text: BO LYMIN BF9864A Feature 1. FSTN Transflective LCD, COF package 2. Built-in driver PCF8548, serial I2C data bus 3. 1/64 duty cycle 4. +3V power supply 5. With FPC and ZIF connector Unit mm mm mm mm Pin Assignment Pin Symbol Function LCD power supply 1 Vlcd


    Original     		PDF BF9864A PCF8548, PC854 PCF8548 cof lcd BF9864A BF986

    BF988

    Abstract: BF988A BF988B
    Text: BF988 Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF- and UHF- tuners. Features D D D D D High AGC-range


    Original     		PDF BF988 BF988 D-74025 08-Jul-99 BF988A BF988B

    BF988

    Abstract: BF988A BF988B 4584 applications
    Text: BF988 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages of VHF- and UHF-tuners. Features D D D D Integrated gate protection diodes D High AGC-range


    Original     		PDF BF988 BF988 D-74025 29-Jan-97 BF988A BF988B 4584 applications

    BF988A

    Abstract: bf988 BF988B
    Text: BF988 Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF- and UHF- tuners. Features D D D D D High AGC-range


    Original     		PDF BF988 BF988 D-74025 08-Jul-99 BF988A BF988B

    TO50 package

    Abstract: BF988 BF988A BF988B
    Text: BF988 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High gain High AGC-range Low feedback capacitance


    Original     		PDF BF988 2002/95/EC 2002/96/EC 08-Apr-05 TO50 package BF988 BF988A BF988B

    BF988A

    Abstract: BF988B TO50 package
    Text: BF988 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High gain High AGC-range Low feedback capacitance


    Original     		PDF BF988 2002/95/EC 2002/96/EC BF988 BF988A BF988B D-74025 15-Apr-05 TO50 package

    BF988

    Abstract: BF988A BF988B
    Text: BF988 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages of VHF- and UHF-tuners. Features D D D D Integrated gate protection diodes D High AGC-range


    Original     		PDF BF988 BF988 D-74025 29-Jan-97 BF988A BF988B

    Untitled

    Abstract: No abstract text available
    Text: BF989 Transistors N-Channel; Dual-Gate Tetrode MOSFET V BR DSS (V)20 V(BR)GSS (V) I(D) Max. (A)30m I(DM) Max. (A) Pulsed I(D) @Temp (øC) Absolute Max. Power Diss. (W)200m¥ Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Amb.460


    Original     		PDF BF989

    S852T

    Abstract: BF579 T0-50 BF964S BF96 BFP183T
    Text: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15


    OCR Scan     		PDF BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T S852T BF579 T0-50 BF96 BFP183T

    BF980

    Abstract: BF980A
    Text: BF980A SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected. Intended for UHF applications, such as UHF television tuners, with 12 V supply voltage and professional communication equipment.


    OCR Scan     		PDF BF980A BF980 BF980A

    BF982

    Abstract: Transistor BF982
    Text: BF982 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type fie ld -e ffe ct transistor in a plastic X-package w ith source and substrate interconnected. Intended fo r V H F applications, such as VHF television tuners, FM tuners, w ith 12 V supply voltage. This MOS-FET te tro de is protected against excessive in p u t voltage surge« b y integrated back-to-back


    OCR Scan     		PDF BF982 lD-20/iA Tamb-25 BF982 Transistor BF982

    Untitled

    Abstract: No abstract text available
    Text: *OT » * 1990 Philips Com ponents D a te s h e e t s ta tu s P re lim in a ry s p e c ific a tio n d a te o f is s u e O c to b e r 1d 90 FEATURES • Short channel transistor with high ratio [YfelTCia. • Low noise gain controlled amplifier to 1 GHz. BF988


    OCR Scan     		PDF BF988 bbS3131

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE DbE D h b S a ^ l 001ETA2 3 A BF980 T- SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for u.h.f. applications, such as u.h.f. television tuners, with 12 V supply voltage.


    OCR Scan     		PDF 001ETA2 BF980

    Untitled

    Abstract: No abstract text available
    Text: BF980A J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected. Intended for UHF applications, such as UHF television tuners, with 12 V supply voltage and professional communication equipment.


    OCR Scan     		PDF BF980A CA10S 003ST43 bti53t131 0035T44

    BF981

    Abstract: bf981 TRANSISTOR gs gl 317 tv tuner SOT103 transistor Bf981
    Text: BF981 J v _ _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type fietd-effect transistor in a plastic X-package with source and substrate interconnected, intended for V H F applications, such as V H F television tuners, FM tuners and professional communi­


    OCR Scan     		PDF BF981 BF981 bf981 TRANSISTOR gs gl 317 tv tuner SOT103 transistor Bf981

    BF981

    Abstract: bf981 TRANSISTOR sot103
    Text: 7110fl2b G0b7S53 MTT « P H I N BF981 J v _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r VHF applications, such as VHF television tuners, FM tuners and professional com m uni­


    OCR Scan     		PDF 7110fl2b G0b7S53 BF981 7110fl2b 00b7SS7 7Z82691 7Z82690 711Dfl2b BF981 bf981 TRANSISTOR sot103

    dual-gate

    Abstract: No abstract text available
    Text: Short-form product specification Philips Sem iconductors Silicon N-channel dual-gate MOS-FET BF980A APPLICATIONS • UHF applications such as UHF television tuners with 12 V supply voltage and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic X-package


    OCR Scan     		PDF BF980A dual-gate

    bf982

    Abstract: dual-gate Transistor BF982
    Text: Short-form product specification Philips Semiconductors Silicon N-channel dual-gate MOS-FET BF982 APPLICATIONS • VHF applications such as VHF television tuners and FM tuners with 12 V supply voltage. d DESCRIPTION Depletion type field-effect transistor in a plastic X-package


    OCR Scan     		PDF BF982 bf982 dual-gate Transistor BF982

    BF982

    Abstract: No abstract text available
    Text: BF982 _ / v_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for VHF applications, such as VHF television tuners, FM tuners, with 12 V supply voltage.


    OCR Scan     		PDF BF982 DQ35T55 BF982

    BF989

    Abstract: SS MARKING CODE mosfet marking code gg
    Text: 71 1 0 0 2 b OübfibTb fc,b2 H P H I N BF989 J V_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T 1 4 3 microminiature envelope with source and substrate interconnected. This M O S -F E T tetrode is intended for use in u.h.f. applications in television


    OCR Scan     		PDF 711002b BF989 OT143 20/iA BF989 SS MARKING CODE mosfet marking code gg

    BF988

    Abstract: LTA 703 S BF988A
    Text: Tem ic BF988 Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Applications Electrostatic sensitive device. Observe precautions for handling jk Input and mixer stages of VHF- and UHF-tuners. Features • • • • Integrated gate protection diodes


    OCR Scan     		PDF BF988 BF988 29-Jan-97 LTA 703 S BF988A

    BF980

    Abstract: BF980A SOT-103 transistor SOT103 mosfet
    Text: Tlioaab C0b7547 ITS M P H I N BF980A SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected. Intended fo r UHF applications, such as UHF television tuners, w ith 12 V supply voltage and professional


    OCR Scan     		PDF cob7547 BF980A BF980 BF980A SOT-103 transistor SOT103 mosfet