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    Microchip Technology Inc JANTX2N2369A

    Bipolar Transistors - BJT Small-Signal BJT
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    Mouser Electronics JANTX2N2369A 150
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    Microchip Technology Inc Jan2N2369A

    Bipolar Transistors - BJT Small-Signal BJT
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    Mouser Electronics Jan2N2369A 150
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    Microchip Technology Inc Jantx2N2369AUB

    Bipolar Transistors - BJT Small-Signal BJT
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    Mouser Electronics Jantx2N2369AUB 87
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    Microchip Technology Inc JANTXV2N2369A

    Bipolar Transistors - BJT Small-Signal BJT
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    Mouser Electronics JANTXV2N2369A
    • 1 $5.15
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    Microchip Technology Inc Jantx2N2369AUA

    Bipolar Transistors - BJT Small-Signal BJT
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    Mouser Electronics Jantx2N2369AUA
    • 1 $37.43
    • 10 $37.4
    • 100 $34.75
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    J 2N2369 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    J 2N2369 Thomson-CSF Condensed Data Book 1977 Scan PDF
    J2N2369 Thomson-CSF Condensed Data Book 1977 Scan PDF
    J-2N2369 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    J.2N2369 Thomson-CSF Condensed Data Book 1977 Scan PDF

    J 2N2369 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    voltage regulator 16-Pin 15 Volt

    Abstract: 12 volt 200 Amp PWM SG1524 application 1N914 2N2369 IP1524 IP1524B IP1524BJ IP2524B IP3524B
    Text: IP1524B SERIES SEME LAB REGULATING PULSE WIDTH MODULATORS TOP VIEW INV. INPUT 1 16 VREF N. I. INPUT 2 15 VIN OSC. OUTPUT 3 14 EB +C.L. SENSE 4 13 CB –C.L. SENSE 5 12 CA RT 6 11 EA CT 7 10 SHUTDOWN GROUND 8 9 FEATURES COMPENSATION J Package – 16 Pin Ceramic DIP


    Original     		PDF IP1524B IP1524 voltage regulator 16-Pin 15 Volt 12 volt 200 Amp PWM SG1524 application 1N914 2N2369 IP1524BJ IP2524B IP3524B

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    2N2147

    Abstract: 2N2075 2N2148 2N2160 2N1545 2N1924 2n2222 book TRANSISTOR 2N2222 2N2016 2N2219 transistor
    Text: DIGITRON ELECTRONIC CORP 3LE D • 2045^07 DOOOODM 0 ■ DGE ' 2 ^} ~ 0 \ Page #4 DIQITRON ELECTRONIC CORF 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 F a x No. J O H N J. SCHWARTZ ENGINEERING D I G I T R O N E L E C T R O N I C S , CORP ,


    OCR Scan     		PDF 2N1542A 2N1599 2N1671A 2N1811 2N2077A 2N2192B 2N1543 2N1606 2N1671B 2N1812 2N2147 2N2075 2N2148 2N2160 2N1545 2N1924 2n2222 book TRANSISTOR 2N2222 2N2016 2N2219 transistor

    2N2148

    Abstract: 2N2148 transistor 2N2147 2n2222 2N1545 2N2160 2N1906 transistor 2N2147 transistor 2n1906 2N1924
    Text: DIGITRON ELECTRONIC CORP 3LE D • 2045^07 DOOOODM 0 ■ DGE ' 2 ^} ~ 0 \ Page #4 DIQITRON ELECTRONIC CORF 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 F a x No. J O H N J. SCHWARTZ ENGINEERING D I G I T R O N E L E C T R O N I C S , CORP ,


    OCR Scan     		PDF 2N1542A 2N1599 2N1671A 2N1811 2N2077A 2N2192B 2N1543 2N1606 2N1671B 2N1812 2N2148 2N2148 transistor 2N2147 2n2222 2N1545 2N2160 2N1906 transistor 2N2147 transistor 2n1906 2N1924

    Untitled

    Abstract: No abstract text available
    Text: RAY THE ON/ SEM IC O N D U C T OR 7597360 "TM RAYTHEON. D Ë J 75=1731.0 0005551 b SE M IC O N D U C T O R 94D Product Specifications Small Signal Transistors 0555 1 D 712S~-/3~ C J N PN Raytheon Ultra High Speed Switches CJ NPN Description High speed gold doped silicon epitaxial tran­


    OCR Scan     		PDF 100mA. 2N2369A/JAN 2N4137 2N706A 2N2368 27BSC -050BSC 54BSC

    HP6218A

    Abstract: MFOE108F MC10116 application MC10116 MFOE107F Q1 sym 602 motorola application notes 227240-3 SIECOR Fiber Optic cable MOTOROLA FIBER OPTIC
    Text: MOTOROLA SC m DIODES/OPTO & 0 ä ik > T Ö R Ö lb D b3b7255 QQ337Qb b I MOT? L Ä MF0E107F MF0E108F » S E M IC O N D jU C irQ R S J § O • -^ g ^ ^ ^ T -4 1 -0 7 P.Q5SOXp091g-i PHOENIX^ARÎZoFTA'SSQâS^j^^ ^ ^ FIBER OPTICS A IG aA s FIBER O PTIC EM ITTER


    OCR Scan     		PDF b3b7255 QQ337Qb Q5SOXp091g-i MF0E107F MF0E108F MFOD405F MC10116 MC3302 MF0D102F HP6218A MFOE108F MC10116 application MC10116 MFOE107F Q1 sym 602 motorola application notes 227240-3 SIECOR Fiber Optic cable MOTOROLA FIBER OPTIC

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bTE J> m bbSB'lBl DDEfiOT? ?Qb « A P X 2N2369A SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-18 metal envelope prim arily intended for high-speed saturated switching and high frequency am plifier applications. Q U IC K R E F E R E N C E D A T A


    OCR Scan     		PDF 2N2369A 7Z79604 7Z79606

    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


    OCR Scan     		PDF CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756

    TO205AD

    Abstract: 2N4033 MOTOROLA TO205AD to-205ad 2N3635 MOTOROLA 2N3440 MOTOROLA
    Text: 4bE J> m b3b?254 OOlEbfil 0 •flOTb T-91-60 MOTOROLA SC XSTRS/R F Small-Signal Transistors, Bipolar (continued) Switching Transistors The following devices are intended primarily for use in general-purpose switching, but can be used in amplifier and driver


    OCR Scan     		PDF T-91-60 2N914 2N708 2N2369A 2N3227 2N3735 2N3506 2N3507 2N3737 O-206AC TO205AD 2N4033 MOTOROLA TO205AD to-205ad 2N3635 MOTOROLA 2N3440 MOTOROLA

    2n4208

    Abstract: FTS04124 27575 2n4239 4235 schlumberger 2N4123 2N4124 2N4125 2N4126
    Text: FAIRCHILD SEMICONDUCTOR " ~S4 F e J| 34LTL74 00B7S71 T 3469674 FAIRCHILD SEMICONDUCTOR 84D 27571 2N4123/FTS04123 2N4124/FTS04124 f a ip c h il d A Schlum berger C om pany NPN Small Signal General Purpose Am plifiers & Switches • • • • . . . 25 V Min (2N/FTS04124)


    OCR Scan     		PDF 34LTL74 00B7S71 2N4123/FTS04123 2N4124/FTS04124 O-236AA/AB O-236AA/AB 2N4237/2N4238 2N4239 2n4208 FTS04124 27575 2n4239 4235 schlumberger 2N4123 2N4124 2N4125 2N4126

    2N9308

    Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
    Text: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5


    OCR Scan     		PDF 00DDS7Ã T-A7-01 2N497 12/3S 30/S9 2N3725A 2N3947 2N4080 2N4137 2N4207 2N9308 2N221BA 2N69S 2N3304 2M2193 2NI893 2N236S 2N408 2N238

    CMPZ4124

    Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
    Text: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches


    OCR Scan     		PDF OT-23 350mW CMPT8099 CMPT2222A OT-23 OT-223 OT-89 CQ89D CQ89DS CMPS5061 CMPZ4124 CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B

    2N3055E specification

    Abstract: 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package
    Text: BS/CECC Type No. Polarity 2N 2906\ CV-0 PNP 2N2906A; PNP 1CV' ° 2N2907 1 f f j CV-0 PNP CV-0 PNP 2N2907A 2N2913y 1 50002-186 NPN Dual '2N3054 >2N3055 / ^2N3055E r rX2N3209 1 ^¿2N3209L / • ° 50004-042 50003-020 50004-XXX 50004-XXX 2N3347 2N3348 2N3349


    OCR Scan     		PDF ai331 2N2906\ 2N2906A* 2N2907 2N2907A 2N2913y 2N2914\ 2N2915 2N2916 2N2917 2N3055E specification 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package

    J 2N2369

    Abstract: PIN CONFIGURATION 2N2222 2N2221 2N2221A 2N2222 2N2222A 2N2368 2N2369 2N2369A
    Text: r TO*î8 FL \ PIN CONFIGURATION 1. Emitter 2. Base 3. Collector DIM MIN A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 MAX E - F - 1,27 G - 2,97 0,76 H 0,91 1,17 J 0,71 1,21 K 12,7 L 45 DEG - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN


    OCR Scan     		PDF 2N2222A 2N2368 2N2369 2N2369A J 2N2369 PIN CONFIGURATION 2N2222 2N2221 2N2221A 2N2222

    2N2368

    Abstract: 2N2475 2n2369 2N2476 2N2220 N2904 2N2218 2N2219 2N2221 2N2222
    Text: NPN SW ITCHING - continued Type Max VcEO lc V mA Max VcE sat at V hFE >C mA >B mA Min at Max 'c mA Switching Times (Max) at f j Min at lc MHz mA toff ns ton ns lc Package Comple­ ment mA 30 1000 0 -35 150 15 40 150 50 50 55* 360* 150 TO-39 2N2218 30 800 0 -4


    OCR Scan     		PDF BFY51 2N2218 N2904 2N2219 2N2905 2N2220 2N2221 N2906 2N2222 2N2907 2N2368 2N2475 2n2369 2N2476 N2904

    2n2301

    Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
    Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74


    OCR Scan     		PDF 2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815

    2N2243

    Abstract: No abstract text available
    Text: DEVICE TYPF pa c k a g e ByCEO BVC80 BVEBO ICBO @ VCB IV i M- N i V l M>N . MN i •• A1 MAX JV» HFE @ VC & IC MIN MAR .V COB J v*. FT 2N1507 2N1566 2N16I3 2N1711 2N1889 NPN NPN NPN NPN NPN ro-5 ro-5 TO 5 ro- 5 TO-5 30 60 50 50 60 60 00 75 75 100 5 5 7


    OCR Scan     		PDF BVC80 2N1507 2N1566 2N16I3 2N1711 2N1889 2NI890 2NI973 2N1974 2N1975 2N2243

    UM9C

    Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
    Text: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma


    OCR Scan     		PDF DDDQS16 2N2242 2N2368 2N2369 2N2369A 2N2410 N2475 2N2481 2N2501 2N2651 UM9C J 2N930 2N2651

    2N702

    Abstract: 2N834 MPS3564 MPS914 2N744 2N3011 2N5224 2N835 2N743 2N914
    Text: MOTOROLA I SC -CDIODES/OPTOJ- 6367255 MOTOROLA SC 34 D Ü j|fc .3 h 7 E 5 S D IO D E S /O P TO 34C □ U ^ Ï T r '5 37975 "I D T'35-J5 SILICO N SM A LL-SIG N A L TR A N SISTO R DICE (continued) 2C2369A DIE NO. — NPN LINE SOURCE — DMB103 This die provides performance similar to that of the following device types:


    OCR Scan     		PDF 35-J5 DMB103 2N702 2N703 2N706 2N708 2N743 2N744* 2N753* 2N834 MPS3564 MPS914 2N744 2N3011 2N5224 2N835 2N914

    BSX21

    Abstract: BC107C BC10B 2N718 pin configuration 2N915 BC109C pin configuration bfy76 BSY79 BC-108 2N2221A
    Text: TO-18 P IN C O N F I G U R A T I O N 1. E m itte r 2. B a s e 3. C o lle c to r DIM MIN A 5,24 MAX 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 0,76 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 DEG ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN


    OCR Scan     		PDF BCY59-9 BFY76 BSX21 BSX48 BSY79 CIL351 CIL352 BSX21 BC107C BC10B 2N718 pin configuration 2N915 BC109C pin configuration BC-108 2N2221A

    Untitled

    Abstract: No abstract text available
    Text: SbE m T> ^7057fl NPN SWITCHING Type BFY51 Max V CEO 'c 0 0 0 b ^ 6 ZETEX S E M I C O N D U C T O R S Continued M ax V CE sat at hFE 'b Min M ax 40 V •c V mA mA mA 30 1000 0.35 150 15 041 « Z E T B " F i b S ~ C > j fT Min at at - Switching times (Max.) at


    OCR Scan     		PDF 7057fl BFY51 2N2218 2N2904 2N2219 2N2905 2N2221 2N2369A 2N2368 2N2369

    Untitled

    Abstract: No abstract text available
    Text: TO-18 - A • T o P IN C O N F IG U R A T IO N 1. E m itte r 2. B a s e 3 . C o lle c to r DIM MIN A 5,24 5,84 B 4,52 4,97 MAX C 4,31 5,33 D 0,40 0,53 0,76 E - F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 L 45 DEG - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN


    OCR Scan     		PDF 2N2221 BSX48 CIL352 BSX21 BFY76 BCY59-9 BCY59-8 BCY59-7 BCY59-10 BCY59

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


    OCR Scan     		PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28

    2N2369 transistor pulse generator

    Abstract: 2N2369 philips 2N2369 J 2N2369 philips 2n2369
    Text: N AUER PHILIPS/DISCRETE LTE D • 1^53^31 □ D2A0'î4 TT7 W M A P X Ü N Ü iib y J L SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N tra n sisto r in a TO -18 m etal envelope w ith th e co lle c to r connected to th e case. T he 2N 236 9 is p rim a rily intended fo r use in ve ry high-speed saturated sw itching and v.h .f. a m p lific a tio n .


    OCR Scan     		PDF 890JL 220JL -15V-- 2N2369 transistor pulse generator 2N2369 philips 2N2369 J 2N2369 philips 2n2369