2N6116
Abstract: 2N6118 2N6117 2n6116 motorola Unijunction motorola programmable unijunction
Text: MOTOROLA SC DIODES/OPTO S5E D b3b7255 OQflOltS 1 • 2N6116 2N6117 2N6118 Silicon Program m able U nijunction Transistors . . . d e sign e d to enable the engineer to " p r o g r a m " unijunction characteristics such a s Rbb> V i lv> and Ip ^ m erely selecting tw o resistor values, Application includes
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b3b7255
2N6116
2N6117
2N6118
2n6116 motorola
Unijunction
motorola programmable unijunction
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HP6218A
Abstract: MFOE108F MC10116 application MC10116 MFOE107F Q1 sym 602 motorola application notes 227240-3 SIECOR Fiber Optic cable MOTOROLA FIBER OPTIC
Text: MOTOROLA SC m DIODES/OPTO & 0 ä ik > T Ö R Ö lb D b3b7255 QQ337Qb b I MOT? L Ä MF0E107F MF0E108F » S E M IC O N D jU C irQ R S J § O • -^ g ^ ^ ^ T -4 1 -0 7 P.Q5SOXp091g-i PHOENIX^ARÎZoFTA'SSQâS^j^^ ^ ^ FIBER OPTICS A IG aA s FIBER O PTIC EM ITTER
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b3b7255
QQ337Qb
Q5SOXp091g-i
MF0E107F
MF0E108F
MFOD405F
MC10116
MC3302
MF0D102F
HP6218A
MFOE108F
MC10116 application
MC10116
MFOE107F
Q1 sym 602
motorola application notes
227240-3
SIECOR Fiber Optic cable
MOTOROLA FIBER OPTIC
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MOC8060
Abstract: ANSI 60 CE01 Motorola optoisolator lead form options
Text: MO TO R O L A SC D I O D E S / O P T O b3b7255 0GÔ312Ô G K3MOT? 3^E » Order this data sheet by MQC8060/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MOC8O6O 6-Pin DIP Optoisolator AC Input/Darlington Output This device consists of two gallium arsenide infrared emitting diodes connected in inverseparallel, optically coupled to a silicon photodarlington detector which has integral base-emitter
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b3b7255
MQC8060/D
E54915^
C13S0
OJJ20
730B-02
730C-02
730D-Q2
MOC8060
ANSI 60
CE01
Motorola optoisolator lead form options
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2N3866 MOTOROLA s parameters
Abstract: MPS3866A 2n3866A 2C3866 2N3866 2N3866 MOTOROLA
Text: MOTOROLA s c -CDIODES/OPTOÏ — 34 de |b3b7255 003ÔD51 î I 6 3 6 7 2 5 5 MOTOROLA SC ' - • 34c D I O D E S / O PTO> 3805 1 D v SILICON RF tRA N SISTO R DICE (continued T ~ 3 /- 2 3 2C3866 DIE NO. — NPN LINE SOURCE — RF502.151 This die provides performance equal to or better than that of
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b3b7255
RF502
2C3866
2N3866
2N509O
MPS3866
2N3866 MOTOROLA s parameters
MPS3866A
2n3866A
2C3866
2N3866 MOTOROLA
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2N1595 MOTOROLA
Abstract: 2n1595
Text: MOTOROLA SC DIODES/OPTO tiME D • b3b7255 OOäSTGl M0T7 2N 1595 thru S ilico n Controlled Rectifiers 2N 1599 Reverse Blocking Triode Thyristors These devices are glassivated planar construction designed for gating operation in mA//iA signal or detection circuits.
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b3b7255
2N1596
2N1599
2N1595 MOTOROLA
2n1595
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Untitled
Abstract: No abstract text available
Text: M O T O R O L A SC D I O D E S / O P T O b4 D b3b7255 GQbflEbfl 7 • M0T7 T -4 1 -5 0 r,;:0D?302 F IB E R P T iC S P H O T O D A R L IN G T O N T R A N S IS T O R FO R FIB ER O P T IC S Y S T E M S N P N S IL IC O N PHOTO D A R L IN G T O N T R A N S IS T O R
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b3b7255
C24614
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1n3903 diode
Abstract: MR1386 1N3903 PIC18f13k50 example codes tmr2 motorola opto n3903 1N3899 1N3901 1N3902 1N3999
Text: MOTOROLA SC DIODES/OPTO b4E Í b3b7255 MOTOROLA DGÛL. 231 147 1N3899 thru 1N3903 MR1386 SEMICONDUCTOR TECHNICAL DATA 1N3901 and MR1386are Motorola Preferred Devices D e s ig n e r s D a ta S h e e t FAST REC O VERY POWER R EC TIFIE R S STUD M O U N TE D
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b3b7255
1N3899
1N3903
MR1386
1N3901
MR1386
1n3903 diode
PIC18f13k50 example codes tmr2
motorola opto
n3903
1N3902
1N3999
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC -CDIODES/OPTOJ i 6367255 M OT O R O L A Im SC ¡>F|b3b7255 D03ÖS4B h |~~ D IO D E S /O P TO 34C 38243 D 7^ 0 3 - C f SOT23 (continued) BAV70 DEVICE NO. SMALL-SIGNAL SWITCHING DIODE T0P VIEW r— « I Common cathode dual diode specially designed for high
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b3b7255
BAV70
BAV70
1505C
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MR2400F
Abstract: MR2401 MR2402F 1N4001 1N4933 IN4723 MR2404F MR2406F S1N4001 ITT 1N4001
Text: MOTOROLA SC D I O D E S / O P T O bM E » b3b7255 GGflti4l43 7 20 • MOT ? MR2400F MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA MR2406F MR2402F and MR2406F are Motorola Preferred Devices FAST RECOVERY TAB-MOUNTED FAST RECOVERY POWER RECTIFIERS POWER RECTIFIERS
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b3b75SS
GGAb4i43
MR2400F
MR2406F
MR2402F
MR2406F
T0-220AB
MR2400F
MR2401
0-27nH
1N4001
1N4933
IN4723
MR2404F
S1N4001
ITT 1N4001
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DIODE MOTOROLA 2101
Abstract: marking 4p sot23 MMBV2104 Diode marking 4R MMBV2102 MMBV2100 MMBV diode marking 4p MMBV2106 diode marking 4K
Text: 34 MOTOROLA SC {DIODE S/ OP T O} 6367255 MOTOROLA SC DE"|b3b7255 003Û3S3 5 <D I O D E S / O P T O 3<tC 3 8 3 5 3 D SOT23 continued) d e v ic e no. MMBV2097 thru MMBV2109 SMALL-SIGNAL TUNING DIODES T 0 P VIEW | i • D esigned for general-frequency control and tuning applications.
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b3b7255
MMBV2097
MMBV2109
MMBV-2097
MMBV-2098
MMBV-2099
MMBV-2100
MMBV-2101
MMBV-2102
MMBV-2103
DIODE MOTOROLA 2101
marking 4p sot23
MMBV2104
Diode marking 4R
MMBV2102
MMBV2100
MMBV
diode marking 4p
MMBV2106
diode marking 4K
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2N4893
Abstract: 2N4894 UJT 2N4871 UJT 2N4852 90VSS transistor 2n4871 ujt 2n2647 2N4949 2n4852 ujt transistor
Text: 34 M O T O R O L A SC O I O D E S / O P T O J S 6367255 MOTOROLA SC De | b3b7255 0G3Ö1S0 D DIODES/OPTO 34C 38150 D ^ -3 5 -3 j SELICON THYRISTOR DIE (continued) die n o . 2C4871 LINE SOURCE — DTL58 Device assembled from this die type are similar to the fol
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b3b7255
2C4871
DTL58
2N2647
2N39B0
2N4852
2N4853
2N4871
2N4893
2N4894
UJT 2N4871
UJT 2N4852
90VSS
transistor 2n4871
ujt 2n2647
2N4949
ujt transistor
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2N3440 MOTOROLA
Abstract: MM421 MOTOROLA transistor 413 MM420 SILICON SMALL-SIGNAL DICE
Text: MOTOROLA SC 34 -CDIODES/OPTO} D " I b3b7255 34 C □037105 37982 T - i S '- t s ' SILICON SMALL-SIGNAL TRANSISTOR DICE continued 2C3439 DIE NO. — NPN LINE SOURCE — DSL242 & This die provides performance simifar to that of the following device types:
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b3b7255
DSL242
2C3439
2N3439
2N3440
MM420
MM421
2N3440 MOTOROLA
MM421
MOTOROLA transistor 413
SILICON SMALL-SIGNAL DICE
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1N4726A
Abstract: zener diode 1N4726a motorola 1N4740A 1N4733A motorola 1N4726 MOTOROLA 1N4751A Motorola 1N4739A motorola 1N4761A 1N4734A Motorola 1N4730A
Text: 31E J> MOTOROLA SC DIODES/OPTO B b3b7255 OOâBôlQ 1N4728Athru 1N4764A E3MOT? T-Î1-13 ‘ E L E C T R IC A L C H A R A C T E R IS T IC S (TA = 25°C unless otherwise noted) VF = 1.2 V Max, If = 200 mA for all types. Nominal Zener Voltaqe Maximum Zener Impedance (Note 4)
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b3b7255
1N4728Athru
1N4764A
1N4726A
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
zener diode 1N4726a
motorola 1N4740A
1N4733A motorola
1N4726
MOTOROLA 1N4751A
Motorola 1N4739A
motorola 1N4761A
1N4734A Motorola
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MURD620CT
Abstract: MURD610CT
Text: MOTOROLA SC DIODES/OPTO b4E D • b3b7255 GDf i b S3 7 30ñ hot? MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers DPAK Surface Mount Package . . . designed fo r use in sw itching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the follow in g features:
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b3b7255
MURD605CT
MURD610CT
MURD615CT
MURD620CT
MURD620CT
b3b7255
MURD605CT,
MURD610CT,
MURD615CT,
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2N6078
Abstract: No abstract text available
Text: MOTOROLA SC -CDIODES/OPTO} 34 ]>E.| b3b7255 0037^44 T f §337255 M O T O R O L A SC D I O D E S /O P T O 34C 3 7 9 4 4 D T '3 3 '0 1 SILICON POWER TRANSISTOR DICE (continued) 2C6235 DIE NO. — NPN LINE SOURCE — PL500.746 This die provides performance equal to or better than that of
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b3b7255
PL500
2N6077
2N6078
2N6233
2N6234
2N6235
2C6235
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One W att Darlington Transistors MPSW13 MPSW14 NPN Silicon COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating C ollecto r- Emitter Voltage Symbol Value Unit Vdc VCES 30 C ollector-B ase Voltage VCBO 30 Vdc E m itter-B ase Voltage
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MPSW13
MPSW14
00T34b3
MPSW13
b3b7255
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV609LT1/D SEMICONDUCTOR TECHNICAL DATA S ilico n Tim ing Diode MMBV609LT1 This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configuration for minimum
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MMBV609LT1/D
MMBV609LT1
OT-23
b3b72S5
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TTL to Differential PECL Translator MC10ELT20 MC100ELT20 The MC1OELT/100ELT20 is a TTL to differential PECL translator. Because PECL Positive ECL levels are used only +5V and ground are required. The small outline 8-lead SOIC package and the single gate of
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MC10ELT20
MC100ELT20
MC1OELT/100ELT20
ELT20
10ELT
100ELT
BR1330
b3b7255
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor BF493S PNP Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Voltage VCEO -350 Vdc Collector-Base Voltage v CBO -350 Vdc Emitter-Base Voltage Ve b o -6.0
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BF493S
b3b7255
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T2T TRANSISTOR
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Sm all-Signal Darlington Transistor BSP52T1 M otorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is
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BSP52T1
OT-223
BSP52T1
inch/1000
BSP52T3
inch/4000
b3b72S5
T2T TRANSISTOR
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motorola an569
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors BCW69LT1 BCW70LT1 PNP Silicon COLLECTOR 3 2 EMITTER CASE 3 1 8 -0 8 , STYLE 6 S O T -23 TO -236A B MAXIMUM RATINGS Symbol Rating Value Unit Vdc Collector-Emitter Voltage VCEO -45 Emitter-Base Voltage
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BCW69LT1
BCW70LT1
-236A
AN-569.
b3b7255
motorola an569
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MURF820/D SEMICONDUCTOR TECHNICAL DATA Advance Information MURF820 SWITCHMODE Power Rectifier Motorola Preferred Device Designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features:
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MURF820/D
MURF820
b3b72s5
0QH071Ã
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5211DW1T1 SERIES Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a
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MUN5211DW1T1
MUN5211DW1T1
T-363
b3b72SS
MUN5215DW1T1
3b7255
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper Transistor N-Channel — Depletion MAXIMUM RATINGS Rating D r a in -G a te Voltage G a te -S o u rc e Voltage Symbol Value Unit VD G -3 5 V dc VG S -3 5 V dc G ate C urrent 'g 50 m Adc Total Device D issipation @ T a = 25°C
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b3b72S5
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