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    TO205AD Search Results

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    Catalog Datasheet MFG & Type Document Tags PDF

    2N3421

    Abstract: 2N3419 2N3420 1000C 2N3418 2N3418S 2N3419S 2N3420S
    Text: TECHNICAL DATA 2N3418, S, JAN, TX, TXV 2N3419, S, JAN, TX, TXV 2N3420, S, JAN, TX, TXV 2N3421, S, JAN, TX, TXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/393 NPN SILICON MEDIUM-POWER TRANSISTOR 2N3418, 2N3419, 2N3420, 2N3421 TO- 5 MAXIMUM RATINGS Ratings


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    2N3418, 2N3419, 2N3420, 2N3421, MIL-PRF-19500/393 2N3421 1000C 2N3421 2N3419 2N3420 2N3418 2N3418S 2N3419S 2N3420S PDF

    2N3868

    Abstract: 2N3867S 2N3867 2N3868S JTX 2N3867 2N3868S JAN
    Text: TECHNICAL DATA 2N3867 JAN, JTX, JTXV 2N3867S JAN, JTX, JTXV 2N3868 JAN, JTX, JTXV 2N3868S JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/350 PNP SILICON SWITCHING TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage


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    2N3867 2N3867S 2N3868 2N3868S MIL-PRF-19500/350 2N3867 2N3867S 2N3868 2N3868S 2N3867, JTX 2N3867 2N3868S JAN PDF

    2N6660 JANTX

    Abstract: No abstract text available
    Text: 2N6660JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS


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    2N6660JAN/JANTX/JANTXV 2N6659/2N6660, VQ1004J/P VNDQ06 P-37515--Rev. 04-Jul-94 2N6660 JANTX PDF

    IRF150CF

    Abstract: GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTF152 YTFP150 2SK747
    Text: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Max (V) Clsa Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 BUZ349 BUZ349 SFN152 YTFP152


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    BUZ349 SFN152 YTFP152 YTF152 IRFP152 RFH35Nl0 RFK35Nl0 PB125N60HM PB125N60HP IRF150CF GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTFP150 2SK747 PDF

    2N5781

    Abstract: No abstract text available
    Text: 2N5781 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


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    2N5781 O205AD) 1-Aug-02 2N5781 PDF

    BSX46

    Abstract: No abstract text available
    Text: BSX46 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


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    BSX46 O205AD) 1-Aug-02 BSX46 PDF

    2N5333

    Abstract: No abstract text available
    Text: 2N5333 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


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    2N5333 O205AD) 1-Aug-02 2N5333 PDF

    CV7727

    Abstract: No abstract text available
    Text: CV7727 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


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    CV7727 O205AD) 1-Aug-02 CV7727 PDF

    2N6303

    Abstract: No abstract text available
    Text: 2N6303 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016)


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    2N6303 O205AD) 1-Aug-02 2N6303 PDF

    2N4272A

    Abstract: No abstract text available
    Text: 2N4272A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 140V 0.41 (0.016)


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    2N4272A O205AD) 1-Aug-02 2N4272A PDF

    2N1132A

    Abstract: 2N3495 2N5415 2n1132a transistor 2N3494 2N2800 2N4033 2N2904 2N2905 2N3467
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PN P TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637 2N3743


    OCR Scan
    O-5/TO205AD/TO-39 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3495 2n1132a transistor 2N3494 2N4033 2N3467 PDF

    2N4033

    Abstract: 2N3494 2N5415
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V cE O Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637


    OCR Scan
    O-5/TO205AD/TO-39 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N4033 2N3494 PDF

    2N 3495

    Abstract: 2N5415
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PINT TRANSISTOR TO-5/TO205AD/TO-39 PACKAG E D E V IC E T Y PE VcEO sus VOLTS Ic (m ax) AM PS TO -5 T O 205A D 2N 1132A 40 0.6 2N 2800 35 2N 2904 i T O -39 fn ^FE @ V V CE m in/m ax @ m A /V VcE(sat) @ I c/I b V @ m A /m A


    OCR Scan
    O-5/TO205AD/TO-39 2N 3495 2N5415 PDF

    2N4405

    Abstract: 2N4890 2N4036 2N4929 2N4037 2N4404 2N4406 2N4407 2N4928 2N5022
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 IC/ V c e min/max @ mA/V @ Ic/IB V @ mA/mA c <p P MHz 1.0 40/140@150/10 0.65@150/15 30 60 40 1.0 50/250@l 50/10 1.4@150/15 30 60 2N4404 80 1.0 40/120@ 150/5 0.2@150/15 10 200 2N4405


    OCR Scan
    T0-5/T02Ã 5AD/T0-39 T0205AD 2N4036 2N4037 2N4404 2N4405 2N4406 2N4407 2N4890 2N4929 2N4928 2N5022 PDF

    2N3019A

    Abstract: 2N3501A
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE TO-5 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N2270 2N3019A 2N3020 2N3053A 2N3114 2N3300 2N3498A 2N3499A 2N3500A 2N3501A 2N3724 2N3725


    OCR Scan
    O-5/TO205AD/TO-39 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N3019A 2N3501A PDF

    2n4929

    Abstract: 2N4405
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V ceo sus VOLTS Ic (max) AMPS ^FE @ IC/ VcE min/max @ mA/V VcE(wt) @ I c/I b V @ mA/mA C(P P ij (MHz) 2N4036 65 1.0 40/140@l 50/10 0.65@150/15 30 60 2N4037 40 1.0 50/250@l 50/10 1.4@150/15


    OCR Scan
    O-5/TO205AD/TO-39 T0205AD 2N4036 2N4037 2N4404 2N4405 2N4406 2N4407 2N4890 2N4928 2n4929 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 @ W VCE min/max @ mA/V @ L/I b V @ mA/mA C<^ P fT MHz 1.0 40/140@150/10 0.65@150/15 30 60 40 1.0 50/250@l 50/10 1.4@150/15 30 60 2N4404 80 1.0 40/120@ 150/5 0.2@150/15 10 200 2N4405


    OCR Scan
    O-5/TO205AD/TO-39 2N4404 2N4405 2N4406 2N4407 2N4890 2N4928 2N4929 2N4930 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 T O -5 TO 205A D t ri T O -3 9 20 @ W ^C m in /m a x D E V IC E su s Ic (m a x ) TYPE VOLTS AM PS @ m A /V 2N 697 40h 0 .8 4 1 0 /1 2 0 @ 150/10 2N 1711 50h 1.0 2N 1613 50h 2N 1893


    OCR Scan
    O-5/TO205AD/TO-39 PDF

    VP0300M

    Abstract: VP0300L VP0300B-2 VP0300B VP0300
    Text: VP0300 SERIES P-Channel Enhancement-Mode MOS Transistors HHSüSSÜS PRODUCT SUMMARY PART NUMBER V BR DSS (V) VP0300B -3 0 VP0300L VP0300M BOTTOM VIEW TO-39 (TO-205AD) •d "W (A) PACKAGE 2.5 -1 .2 5 TO -39 -3 0 2.5 -0 .3 2 TO -92 -3 0 2.5 - 0 .5 TO -237 1 SOURCE


    OCR Scan
    VP0300 VP0300B VP0300L VP0300M O-205AD) O-226AA) O-237 VP0300B2 VP0300L VP0300B. VP0300B-2 PDF

    2N6660

    Abstract: s0437 2N6660 siliconix VQ1004J
    Text: 2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V D-S Single and Quad MOSFETs PRODUCT SUMM ARY Part Number V (B R )D S S M i n ( V ) 2N6660 VQ1004J/P 60 r D S (o n) M a x ( Q ) V G S (th ) (V) I d (A) 3 @ V q s = 10 V 0.8 to 2 1.1 3.5 @ V qs = 10 V 0.8 to 2.5


    OCR Scan
    2N6660, VQ1004J/P 2N6660 VQ1004J/P S-04379-- 16-Jul-01 s0437 2N6660 siliconix VQ1004J PDF

    VN0808M

    Abstract: VNDQ09 VNDQ3CHP VN88A TO-205AD
    Text: VNDQ09 N-Channel Enhancement-Mode MOSFETs iTSS?SS.xd DEVICE TYPE PACKAGE Single TO-39 TO-205AD Single TO-237 VN0808M Single TO-220SD VN88AFD Quad 14-Pin Plastic • VQ1006J Quad 14-Pin Dual-ln-Line • VQ1006P Single Chip • Available as VNDQ3CHP


    OCR Scan
    VNDQ09 O-205AD) O-237 O-220SD 14-Pin 2N6661 VN0808M VN88AFD VQ1006J VNDQ3CHP VN88A TO-205AD PDF

    vn0300m

    Abstract: No abstract text available
    Text: SILICONIX INC 1ÔE D • GG3j MG7 4 b ■ VN0300 SERIES f X S ilicon ix X V 3254735 in c o r p o r a te d N-Channet Enhancement-Mode MOS Transistors T -S q -o S PRODUCT SUMMARY PART NUMBER TQ-205AD TO-39 V(BR)DSS fDS(ON) < ii) (V) Id (A) PACKAGE VN0300B


    OCR Scan
    VN0300 VN0300B O-205AD TQ-205AD VN0300L VN0300M O-237 VNDQ03 O-237 VN0300B. vn0300m PDF

    Untitled

    Abstract: No abstract text available
    Text: -BTSSKte 2N6661 JANTX, JANTXV N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY _ TO-39 TO-205AD h O (V) (A) 90 4 0.86 V (B R )D S S BO TTO M VIEW •d 2 GATE 3 & C AS E-D R A IN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


    OCR Scan
    2N6661 O-205AD) MIL-S-19500/547A. PDF

    2n3053A complementary

    Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
    Text: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697


    OCR Scan
    a00S72b 2N2102 2N4036 120MHz 2N697 2N1613 2N3053 2N2270 T0205AD/ 2N3053A 2n3053A complementary 40362 BUX40A 40319 2n4314 2N1893 PDF