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    2N930 Search Results

    2N930 Datasheets (140)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N930 Microsemi NPN Low Power Silicon Transistor Original PDF
    2N930 Semelab Bipolar NPN Silicon Amplifier Transistors - Pol=NPN / Pkg=TO18 / Vceo=45 / Ic=30m / Hfe=100-300 / fT(Hz)=30M / Pwr(W)=0.3 Original PDF
    2N930 Semico Chip Type 2C2484 Geometry 0307 Polarity NPN - Pol=NPN / Pkg=TO18 / Vceo=45 / Ic=30m / Hfe=100-300 / fT(Hz)=30M / Pwr(W)=0.3 Original PDF
    2N930 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N930 Bharat Electronics Transistor Selection Guide Scan PDF
    2N930 Boca Semiconductor Amplifier Transistor NPN Scan PDF
    2N930 Central Semiconductor BJT: NPN: Amplifier Transistor: IC 0.03A Scan PDF
    2N930 Central Semiconductor NPN METAL-CAN SATURATED SWITCH / LOW NOISE LEVEL AMPLIFIER Scan PDF
    2N930 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N930 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N930 Dionics Transistor Chips Scan PDF
    2N930 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    2N930 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N930 Ferranti Semiconductors Shortform Data Book 1971 Scan PDF
    2N930 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N930 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    2N930 General Diode Transistor Selection Guide Scan PDF
    2N930 General Electric Semiconductor Data Book 1971 Scan PDF
    2N930 General Transistor Small Signal Transistor Selection Guide Scan PDF
    2N930 ITT Semiconductors Semiconductor Summary 1969 Scan PDF
    ...
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    2N930 Price and Stock

    Microchip Technology Inc JANTX2N930

    TRANS NPN 45V 0.03A TO18
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    Microchip Technology Inc JANTX2N930 1,312
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    Microchip Technology Inc 2N930

    TRANS NPN 45V 0.03A TO18
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    Microchip Technology Inc 2N930UB

    NPN TRANSISTOR
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    Microchip Technology Inc JAN2N930

    TRANS NPN 45V 0.03A TO18
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    Microchip Technology Inc JANS2N930

    NPN TRANSISTOR
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    2N930 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N930

    Abstract: 2N930A
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO


    Original     		PDF 2N930 2N930A C-120 281102E 2N930 2N930A

    Untitled

    Abstract: No abstract text available
    Text: 2N930A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products


    Original     		PDF 2N930A O206AA) 2-Aug-02

    2N930 JANTX

    Abstract: No abstract text available
    Text: 2N930 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products


    Original     		PDF 2N930 O206AA) 5/10u 2-Aug-02 2N930 JANTX

    Untitled

    Abstract: No abstract text available
    Text: 2N930 Silicon NPN Transistor Data Sheet Description Applications Semicoa Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N930J • JANTX level (2N930JX)


    Original     		PDF 2N930 MIL-PRF-19500 2N930J) 2N930JX) 2N930JV) MIL-STD-750 MIL-PRF-19500/253 6x10-4

    Untitled

    Abstract: No abstract text available
    Text: SEME 2N930CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR


    Original     		PDF 2N930CSM 30MHz x10-6

    Untitled

    Abstract: No abstract text available
    Text: 2N930B Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)30m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)2.0n @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)10m


    Original     		PDF 2N930B

    Untitled

    Abstract: No abstract text available
    Text: 2N930+JAN Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)10m


    Original     		PDF 2N930

    Untitled

    Abstract: No abstract text available
    Text: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR AMPLIFIER TRANSISTORS 2N930, A TO-18 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION


    Original     		PDF 2N930, 2N930 2N930A C-120 ARev280701

    Untitled

    Abstract: No abstract text available
    Text: 2N930/TNT Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)30m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2N930/TNT Freq30M

    2N930

    Abstract: 2N930 JANTX
    Text: 2N930 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N930J • JANTX level (2N930JX)


    Original     		PDF 2N930 MIL-PRF-19500 2N930J) 2N930JX) 2N930JV) MIL-STD-750 MIL-PRF-19500/253 6x10-4 2N930 2N930 JANTX

    2N930

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/253 Devices Qualified Level 2N930 JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation


    Original     		PDF MIL-PRF-19500/253 2N930 O-206AA) 2N930

    Untitled

    Abstract: No abstract text available
    Text: 2N930A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products


    Original     		PDF 2N930A O206AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N930 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products


    Original     		PDF 2N930 O206AA) 5/10u 19-Jun-02

    2N930

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/253 Devices Qualified Level 2N930 JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation


    Original     		PDF MIL-PRF-19500/253 2N930 O-206AA) 2N930

    Untitled

    Abstract: No abstract text available
    Text: 2N930 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products


    Original     		PDF 2N930 O206AA) 5/10u 16-Jul-02

    2N5548

    Abstract: 2N930 TAA170 2000C 2N3548 2N950 2N354B
    Text: 2N930 > 2N3548 COMPLEMENTARY SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS *- . • * :« ;- ïv - • .V 'i-w H § • n- ; -y\ ¿ “¡V •iKv*rlr CASE TO-18 NPN AND 2N3548 (FNP) ARE SILIC' TAXIAL TRANSISTORS FOR USE IN AF AL AMPLIFIERS AND DIRECT COUPLED


    OCR Scan     		PDF 2N930 2N3548 2N930 2N3548 100mA 300mV 100mA 400mW 2N5548 TAA170 2000C 2N950 2N354B

    2n2301

    Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
    Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74


    OCR Scan     		PDF 2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815

    JIDC

    Abstract: No abstract text available
    Text: SE M IC O N D U C T O R TECHNICAL DATA 2N930JAN, JTX Processed per MIL-S-19500/253 NPN Silicon Sm all-Signal Transistor CRYSTALOWCS 2805 Veterans Highway Suite 14 designed fot i o * powuf am putar applicano* RonkOTkOfTì*. N.Y. 11779 MAXIMUM R A T IN G S


    OCR Scan     		PDF 2N930JAN, MIL-S-19500/253 -65IO200 JIDC

    BC238

    Abstract: BCY59A ZTX304 ZTX302 BC107A BC107B BC182 BC237 BC546A BC546B
    Text: SEMICONDUCTOR DICE NPN SMALL SIGNAL TRANSISTORS V CBO V CEO IcBO Min. Min. Max. at V CB Volts Volts BC 546A BC546B Z TX304 BC Y65EA BC182 BC 107A BC107B BC237 BC 547A BC547B BC550B BC550C B C Y59A BC Y59B BCY59C BCY59D 2N930 Z TX303 BC183 BC184 ZTX302 ZTX301


    OCR Scan     		PDF BC546A BC546B ZTX304 BCY65EA BC182 BC107A BC107B BC237 BC547A BC548B BC238 BCY59A ZTX302

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D • bb53T31 0Q2fl0b2 4^7 2N930 IAPX N -P-N SILICON PLANAR TRANSISTOR N-P-N transistors in TO-18 metal envelopes with the collector connected to the case. These devices are primarily intended for use in high performance, low-level, low-noise amplifier appli­


    OCR Scan     		PDF bb53T31 2N930

    2n930

    Abstract: 2N930 Motorola 2N930A
    Text: 2N930, A M AXIMUM RATINGS Symbol 2N930 2N930A Unit C o llector-E m itter Voltage Rating v CEO 45 45 Vdc Collector-Base Voltage VCBO 45 60 Vdc vebo 5.0 6.0 Em itter-Base Voltage C ollector C urrent Vdc >C 30 m Adc = 25 C PD 0.5 3.33 W mW'°C Total Device D issipation '</ T q = 25 C


    OCR Scan     		PDF 2N930, 2N930 2N930A O-206AA) 2N930 Motorola

    2N930A

    Abstract: No abstract text available
    Text: 0 /V E F ^ IP 2N930A NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL NPN TRANSISTORS • LOW LEAKAGE • HIGH CURRENT GAIN • LOW SATURATION VOLTAGE M A X IM U M R A T IN G S R A T IN G S Collector-Em itter Voltage Collector-Base Voltage Emitter-Base Voltage


    OCR Scan     		PDF 2N930A 2N930A

    2N930 NPN transistor FREE

    Abstract: 2n930
    Text: 2N930 1 * 2 * - PHILIPS INTERNATIONAL 5LE D n _j L 7110flSb DDM25ti2 GST M P H I N N -P-N SILICON PLANAR TRANSISTOR N-P-N transistors in T O -18 metal envelopes w ith the collector connected to the case. These devices are prim arily intended fo r use in high performance, low-level, low-noise amplifier appli­


    OCR Scan     		PDF 2N930 7110flSb 10itA 711DflSb T-29-17 2N930 NPN transistor FREE 2n930

    2N2711

    Abstract: No abstract text available
    Text: Low Level and General Purpose Amplifiers H,re CASI 2N929A 2N930 2N930A 2N2511 2N2586 N N N N N TO-18 TO-18 TO-18 TO-18 TO-18 500 500 500 360 300 30 30 30 200 100 45 45 45 50 45 45 100 100 240 120 2N2605 2N2711 SN2712 2N2714 2N2716 P N N N N TO-18 TO-92B TO-92B


    OCR Scan     		PDF 2N929A 2N930 2N930A 2N2511 2N2586 2N2605 2N2711 SN2712 2N2714 2N2716