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IXYS Corporation IXGN320N60A3 IGBT MOD 600V 320A 735W SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGN320N60A3	Tube	1,752		1	1 $39.08 10 $30.151 100 $39.08 1000 $39.08 10000 $39.08	Buy Now
Mouser Electronics	IXGN320N60A3		102			1 $43.18 10 $38.48 100 $33.77 1000 $32.57 10000 $32.57	Buy Now
TTI	IXGN320N60A3	Tube			300	1 - 10 - 100 - 1000 $39.82 10000 $39.82	Buy Now
TME	IXGN320N60A3				1	1 $40.35 10 $31.97 100 $31.97 1000 $31.97 10000 $31.97	Get Quote
ComSIT USA	IXGN320N60A3		134			1 - 10 - 100 - 1000 - 10000 -	Get Quote

New Advantage Corporation	IXGN320N60A3		220		1	1 - 10 $42.27 100 $42.27 1000 $39.45 10000 $39.45	Buy Now
IXYS Corporation IXGN200N60B3 IGBT MOD 600V 300A 830W SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGN200N60B3	Tube	720		1	1 $51.06 10 $41.196 100 $41.196 1000 $41.196 10000 $41.196	Buy Now
Mouser Electronics	IXGN200N60B3		285			1 $56 10 $42.94 100 $41.2 1000 $41.2 10000 $41.2	Buy Now
TTI	IXGN200N60B3	Tube	60		10	1 - 10 $42.86 100 $42.86 1000 $42.86 10000 $42.86	Buy Now
TME	IXGN200N60B3				1	1 $48.4 10 $38.48 100 $38.48 1000 $38.48 10000 $38.48	Get Quote
IXYS Corporation IXGN200N170 IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGN200N170	Tube	300		300	1 - 10 - 100 - 1000 $41.29063 10000 $41.29063	Buy Now
Mouser Electronics	IXGN200N170		384			1 $55.08 10 $50.04 100 $45.03 1000 $45.03 10000 $45.03	Buy Now
TTI	IXGN200N170	Tube			300	1 - 10 - 100 - 1000 $41.29 10000 $41.29	Buy Now
TME	IXGN200N170				1	1 $88.87 10 $70.67 100 $70.67 1000 $70.67 10000 $70.67	Get Quote
New Advantage Corporation	IXGN200N170		24		1	1 - 10 $117.41 100 $109.59 1000 $109.59 10000 $109.59	Buy Now
IXYS Corporation IXGN72N60C3H1 IGBT MOD 600V 78A 360W SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGN72N60C3H1	Tube	300		1	1 $26.58 10 $20.1 100 $26.58 1000 $26.58 10000 $26.58	Buy Now
Mouser Electronics	IXGN72N60C3H1		526			1 $29.13 10 $25.87 100 $22.63 1000 $21.14 10000 $21.14	Buy Now
TTI	IXGN72N60C3H1	Tube			300	1 - 10 - 100 - 1000 $25.41 10000 $25.41	Buy Now
TME	IXGN72N60C3H1				1	1 $39.69 10 $31.53 100 $31.53 1000 $31.53 10000 $31.53	Get Quote
IXYS Corporation IXGN400N60B3 IGBT MOD 600V 430A 1000W SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGN400N60B3	Tube	275		1	1 $57.02 10 $47.008 100 $47.008 1000 $47.008 10000 $47.008	Buy Now
Mouser Electronics	IXGN400N60B3		358			1 $62.66 10 $56.95 100 $51.27 1000 $51.27 10000 $51.27	Buy Now
TTI	IXGN400N60B3	Tube			300	1 - 10 - 100 - 1000 $62.68 10000 $62.68	Buy Now
TME	IXGN400N60B3				1	1 $61.74 10 $49.06 100 $49.06 1000 $49.06 10000 $49.06	Get Quote
New Advantage Corporation	IXGN400N60B3		24		1	1 - 10 $115.05 100 $107.38 1000 $107.38 10000 $107.38	Buy Now

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IXGN Datasheets (38)

Part	Manufacturer	Description	Datasheet Type	PDF
IXGN100N170	IXYS	IGBTs - Modules, Discrete Semiconductor Products, IGBT 1700V 160A GENX3 SOT-227B	Original	PDF
IXGN120N60A3	IXYS	IGBTs - Modules, Discrete Semiconductor Products, IGBT 200A 600V SOT-227B	Original	PDF
IXGN120N60A3D1	IXYS	IGBTs - Modules, Discrete Semiconductor Products, IGBT 200A 600V SOT-227B	Original	PDF
IXGN200N170	IXYS	Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT	Original	PDF
IXGN200N60	IXYS	HiPerFAST IGBT	Original	PDF
IXGN200N60A	IXYS	TRANS IGBT MODULE N-CH 600V 200A 4SOT-227B	Original	PDF
IXGN200N60A2	IXYS	IGBT Discretes: Low Saturation Voltage Types Single IGBT	Original	PDF
IXGN200N60B	IXYS	TRANS IGBT MODULE N-CH 600V 200A 4SOT-227B	Original	PDF
IXGN200N60B	IXYS	HiPerFASTTM IGBT	Original	PDF
IXGN200N60B3	IXYS	IGBTs - Modules, Discrete Semiconductor Products, IGBT 300A 600V SOT-227B	Original	PDF
IXGN200N60N	IXYS	600V HiPerFAST IGBT	Original	PDF
IXGN320N60A3	IXYS	IGBTs - Modules, Discrete Semiconductor Products, IGBT 600V SOT-227B	Original	PDF
IXGN32N60B	IXYS	600V HiPerFAST IGBT	Original	PDF
IXGN32N60BU1	IXYS	600V HiPerFAST IGBT with diode	Original	PDF

IXGN400N30A3	IXYS	IGBTs - Modules, Discrete Semiconductor Products, IGBT 300V SOT-227B	Original	PDF
IXGN400N60A3	IXYS	IGBTs - Modules, Discrete Semiconductor Products, IGBT 400A 600V SOT-227B	Original	PDF
IXGN400N60B3	IXYS	IGBTs - Modules, Discrete Semiconductor Products, IGBT 600V 430A SOT-227	Original	PDF
IXGN50N100	IXYS	Power MOSIGBTs	Scan	PDF
IXGN50N120C3H1	IXYS	IGBTs - Modules, Discrete Semiconductor Products, IGBT 1200V 95A SOT-227	Original	PDF
IXGN50N50	IXYS	Power MOSIGBTs	Scan	PDF

IXGN Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
200N60A Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGN 200N60A VCES IC25 VCE sat tfi = = = = 600 V 200 A 2.5 V 200 ns Preliminary data E Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient	Original	PDF	200N60A 200N60A
IXGN60N60C2 Abstract: 60N60C2 60N60C2D1 ixgn60N60 IXGN60N60C2D1 IGBT 60N60C2D1 siemens igbt siemens igbt 75a high current igbt 60N60C2D Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 IXGN60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A	Original	PDF	60N60C2 IXGN60N60C2D1 OT-227B, IC110 2x61-06A IXGN60N60C2 60N60C2 60N60C2D1 ixgn60N60 IGBT 60N60C2D1 siemens igbt siemens igbt 75a high current igbt 60N60C2D
IXGN400N60B3 Abstract: No abstract text available Text: Preliminary Technical Information IXGN400N60B3 GenX3TM 600V IGBT VCES = 600V IC25 = 430A VCE sat ≤ 1.40V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600	Original	PDF	IXGN400N60B3 OT-227B, E153432 IC110 400N60B3 IXGN400N60B3
IXGN320N60A3 Abstract: No abstract text available Text: IXGN320N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 320A VCE sat ≤ 1.25V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IXGN320N60A3 OT-227B, E153432 IC110 320N60A3 3-08-A IXGN320N60A3
IXGN200N60B3 Abstract: 9V DC INPUT and gate ic 200N60B3 IGBT 100V 100A igbt 100a 150v SOT227B 123B16 Text: IXGN200N60B3 GenX3TM 600V IGBT VCES = 600V IC110 = 200A VCE sat ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IXGN200N60B3 IC110 5-40kHz OT-227B, E153432 200N60B3 8-08-A IXGN200N60B3 9V DC INPUT and gate ic IGBT 100V 100A igbt 100a 150v SOT227B 123B16
Untitled Abstract: No abstract text available Text: Preliminary Technical Information GenX3TM 600V IGBT IXGN120N60A3 IXGN120N60A3D1 VCES = 600V IC110 = 120A VCE sat ≤ 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching D1 E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C	Original	PDF	IXGN120N60A3 IXGN120N60A3D1 IC110 OT-227B, E153432 IF110 2x61-06A
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT VCES IXGN 200N60 IXGN 200N60A 600 V 600 V IC25 VCE sat 200 A 2.5 V 200 A 2.7 V E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient	Original	PDF	200N60 200N60A OT-227B,
ixgn100n170 Abstract: 100N170 IC1700 ixgn100n Text: Preliminary Technical Information High Voltage IGBT IXGN100N170 VCES = 1700V IC90 = 95A VCE sat ≤ 3.0V E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V VGES	Original	PDF	IXGN100N170 OT-227B, E153432 100N170 ixgn100n170 IC1700 ixgn100n
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGN 50N60B VCES IC25 VCE sat tfi(typ) = = = = 600 V 75 A 2.3 V 120ns Preliminary data sheet E Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient	Original	PDF	50N60B 120ns OT-227B E153432 728B1
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBTs with Diode VCES = IC110 = VCE sat ≤ trr = IXGN60N60C2 IXGN60N60C2D1 C2-Class High Speed IGBTs E E 60C2 60C2D1 600V 60A 2.5V 35ns SOT-227B, miniBLOC E153432 E¦ Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR	Original	PDF	IC110 IXGN60N60C2 IXGN60N60C2D1 60C2D1 OT-227B, E153432 2x61-06A
Untitled Abstract: No abstract text available Text: IXGN 200N60A2 IGBT Optimized for Switching up to 5 kHz VCES IC25 VCE sat = 600 V = 200 A = 1.35 V Preliminary Data Sheet E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20	Original	PDF	200N60A2 OT-227B, IC110 728B1 123B1 728B1 065B1
Untitled Abstract: No abstract text available Text: Advance Technical Information GenX3TM 1200V IGBT w/ Diode IXGN50N120C3H1 VCES IC110 VCE sat = 1200V = 50A ≤£ 4.2V High-Speed PT IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200	Original	PDF	IXGN50N120C3H1 IC110 OT-227B, E153432 IF110 50N120C3H1 3-01-10-A
60n60 igbt Abstract: ic 307 ex 60N60 Text: Ultra-Low VCE sat IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient	Original	PDF	60N60 OT-227B 60n60 igbt ic 307 ex 60N60
BD3 diode Abstract: 50N60BD2 w a2a Text: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD2 IXGN 50N60BD3 Buck & boost configurations IGBT .BD2 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75	Original	PDF	50N60BD2 50N60BD3 Applic100 BD3 diode w a2a

Untitled Abstract: No abstract text available Text: VCES = 600V IC110 = 200A VCE sat ≤ 1.50V IXGN200N60B3 GenX3TM 600V IGBT Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 E¦ Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IC110 IXGN200N60B3 5-40kHz OT-227B, E153432 200N60B3 8-08-A
Untitled Abstract: No abstract text available Text: VCES = 300V IC25 = 400A VCE sat ≤ 1.15V IXGN400N30A3 GenX3TM 300V IGBT Ultra-Low-Vsat PT IGBT for up to 10kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IXGN400N30A3 10kHz OT-227B, E153432 IC110 400N30A3 1-18-08-A
Untitled Abstract: No abstract text available Text: VCES = 600V IC25 = 320A VCE sat ≤ 1.25V IXGN320N60A3 GenX3TM 600V IGBT Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IXGN320N60A3 OT-227B, E153432 IC110 320N60A3 3-08-A
ixgn50n120c3h1 Abstract: g50n IF110 g50n120c3 Text: Advance Technical Information IXGN50N120C3H1 GenX3TM 1200V IGBT w/ Diode VCES IC110 VCE sat = 1200V = 50A ≤£ 4.2V High-Speed PT IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200	Original	PDF	IXGN50N120C3H1 IC110 OT-227B, E153432 IF110 50N120C3H1 3-01-10-A ixgn50n120c3h1 g50n IF110 g50n120c3
IXGN82N120C3H1 Abstract: IF110 s7900 Text: Advance Technical Information IXGN82N120C3H1 GenX3TM 1200V IGBT w/ Diode VCES IC110 VCE sat = 1200V = 58A ≤£ 3.9V High-Speed PT IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200	Original	PDF	IXGN82N120C3H1 IC110 OT-227B, E153432 IF110 338B2 IXGN82N120C3H1 IF110 s7900
50N6 Abstract: xs 004 a Text: ADVANCED TECHNICAL INFORMATION v v IXGN 50N60BD3 HîPerFÂST K1BT with HiPerFRED CES ^C25 CE sat = 600 V • 75 A = 2.5 V Buck configuration Symbol B CM Test Conditions SOT-227B, miniBLOC T, = 25°C to 150°C 600 V T. = 25°C to 150°C; RGE = 1 MO 600	OCR Scan	PDF	50N60BD3 OT-227B, 50N6 xs 004 a
7N60B Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28	OCR Scan	PDF	30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh
ixgn60n60 Abstract: No abstract text available Text: H Î Y Y ^JLsIk»!? flHVw AUltra-Low VCE sat IGBT ixgn vCES 60N60 ^C25 VCE(sat) 600 V 100 A 1.6 V Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 MQ 600 V v GES Continuous	OCR Scan	PDF	60N60 OT-227BminiBLOC ixgn60n60
Untitled Abstract: No abstract text available Text: □ IXYS Preliminary data HiPerFAST IGBT IXGN 50N60B V CES I C25 V CE sat = 600 V = 75 A = 2.5 V « Maximum Ratings Symbol Test Conditions VCES Td = 25°C to 150°C 600 V VCGR Td = 25°C to 150°C; RGE = 1 M£i 600 V VGES Continuous ±20 V VGEM Transient	OCR Scan	PDF	50N60B
Untitled Abstract: No abstract text available Text: n î Y V JlQO ÌmI X A HiPerFAST IGBT with HiPerFRED IXGN 50N60BD3 V CES I C25 V CE sat = 600 V = 75 A = 2.5 V Buck configuration Preliminary data sheet Sym bol tù ¡ l i Test C onditions V CES ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 MQ	OCR Scan	PDF	50N60BD3 OT-227B, 50N60BD3

IXGN Search Results

IXGN Price and Stock

IXYS Corporation IXGN320N60A3

IXYS Corporation IXGN200N60B3

IXYS Corporation IXGN200N170

IXYS Corporation IXGN72N60C3H1

IXYS Corporation IXGN400N60B3

IXGN Datasheets (38)

IXGN Datasheets Context Search

200N60A

IXGN60N60C2

IXGN400N60B3

IXGN320N60A3

IXGN200N60B3

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ixgn100n170

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60n60 igbt

BD3 diode

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ixgn50n120c3h1

IXGN82N120C3H1

50N6

7N60B

ixgn60n60

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