200N60 Search Results

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IXYS Corporation IXGN200N60B3 IGBT MOD 600V 300A 830W SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGN200N60B3	Tube	720		1	1 $56.6 10 $43.054 100 $41.196 1000 $41.196 10000 $41.196	Buy Now
Mouser Electronics	IXGN200N60B3		289			1 $54.91 10 $49.92 100 $44.93 1000 $44.93 10000 $44.93	Buy Now
Newark	IXGN200N60B3	Bulk			1	1 $45.21 10 $42.18 100 $36.62 1000 $36.62 10000 $36.62	Buy Now
TTI	IXGN200N60B3	Tube	60		10	1 - 10 $44.37 100 $44.37 1000 $44.37 10000 $44.37	Buy Now
TME	IXGN200N60B3				1	1 $48.5 10 $38.56 100 $38.56 1000 $38.56 10000 $38.56	Get Quote
IXYS Corporation IXXN200N60B3 IGBT MOD 600V 280A 940W SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXXN200N60B3	Tube	291		1	1 $28.19 10 $25.046 100 $21.9063 1000 $18.69338 10000 $18.69338	Buy Now
Mouser Electronics	IXXN200N60B3					1 - 10 - 100 - 1000 $21.9 10000 $21.9	Get Quote
TTI	IXXN200N60B3	Tube			300	1 - 10 - 100 - 1000 $25.77 10000 $25.77	Buy Now
TME	IXXN200N60B3				1	1 $42.2 10 $33.59 100 $33.59 1000 $33.59 10000 $33.59	Get Quote
IXYS Corporation IXXX200N60B3 IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXXX200N60B3	Tube	9		1	1 $19.64 10 $19.64 100 $15.897 1000 $13.55908 10000 $13.55908	Buy Now
Mouser Electronics	IXXX200N60B3					1 - 10 - 100 - 1000 $15.01 10000 $15.01	Get Quote
TTI	IXXX200N60B3	Tube			300	1 - 10 - 100 - 1000 $17.14 10000 $17.14	Buy Now
TME	IXXX200N60B3				1	1 $28.06 10 $22.32 100 $20.11 1000 $20.11 10000 $20.11	Get Quote
IXYS Corporation IXXX200N60C3 IGBT 600V 200A PLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXXX200N60C3	Tube	1		1	1 $12.84 10 $12.84 100 $10.761 1000 $10.761 10000 $10.761	Buy Now
Mouser Electronics	IXXX200N60C3					1 - 10 - 100 - 1000 $12.84 10000 $12.84	Get Quote
TTI	IXXX200N60C3	Tube			300	1 - 10 - 100 - 1000 $17.14 10000 $17.14	Buy Now
IXYS Corporation IXGN200N60 IGBT MOD 600V 200A 600W SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGN200N60	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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200N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
200n60 Abstract: robot control Text: Preliminary Data Sheet HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat tfi = = = = 600 V 175 A 2.1 V 160ns E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	PDF	200N60B 160ns 227TM 728B1 200n60 robot control
200N60A Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGN 200N60A VCES IC25 VCE sat tfi = = = = 600 V 200 A 2.5 V 200 ns Preliminary data E Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient	Original	PDF	200N60A 200N60A
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT VCES IXGN 200N60 IXGN 200N60A 600 V 600 V IC25 VCE sat 200 A 2.5 V 200 A 2.7 V E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient	Original	PDF	200N60 200N60A OT-227B,
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.3 V 160ns E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient	Original	PDF	200N60B 160ns 227TM IXGN200N60B 405B2
Untitled Abstract: No abstract text available Text: IXGN 200N60A2 IGBT Optimized for Switching up to 5 kHz VCES IC25 VCE sat = 600 V = 200 A = 1.35 V Preliminary Data Sheet E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20	Original	PDF	200N60A2 OT-227B, IC110 728B1 123B1 728B1 065B1
200n60 Abstract: No abstract text available Text: Advance Technical Information HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat = 600 V = 175 A = 2.1 V E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	PDF	200N60B 227TM 25crease 728B1 200n60
Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE sat = 600 V = 200 A = 2.1 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient	Original	PDF	200N60B OT-227B,
200n60 Abstract: IXGN200N60B robot control RG200 Text: HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE sat = 600 V = 200 A = 2.1 V Preliminary Data E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V Transient ±30 V IC25 TC = 25°C	Original	PDF	200N60B OT-227B, 728B1 200n60 IXGN200N60B robot control RG200
200N60B Abstract: 200n60 IXGN200N60B SOT227B package SOT227B 123B16 Text: HiPerFASTTM IGBT IXGE 200N60B E Symbol Test Conditions VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.3 V 160ns ISOPLUS 227TM (IXGE) Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient	Original	PDF	200N60B 160ns 227TM IXGN200N60B 405B2 200N60B 200n60 SOT227B package SOT227B 123B16
200N60B Abstract: 200n60 Text: HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE sat = 600 V = 200 A = 2.1 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V Transient ±30 V IC25 TC = 25°C 200 A IL Terminal Current Limit	Original	PDF	200N60B OT-227B, 200N60B 200n60
200N60 Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGN 200N60 IXGN 200N60A VCES IC25 VCE sat 600 V 600 V 200 A 200 A 2.5 V 2.7 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	200N60 200N60A OT-227B, T100A
200n60 Abstract: UPS SIEMENS 200N60A2 123B16 Text: IXGN 200N60A2 IGBT Optimized for Switching up to 5 kHz Preliminary Data Sheet Symbol = 600 V = 200 A = 1.35 V E Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V Transient ±30	Original	PDF	200N60A2 OT-227B, IC110 728B1 123B1 728B1 065B1 200n60 UPS SIEMENS 200N60A2 123B16
200n60 Abstract: ixgn200N60 200N60A IXGN200N60A Text: HiPerFASTTM IGBT IXGN 200N60 IXGN 200N60A VCES IC25 VCE sat 600 V 600 V 200 A 200 A 2.5 V 2.7 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	200N60 200N60A OT-227B, 200n60 ixgn200N60 200N60A IXGN200N60A
200n60 Abstract: No abstract text available Text: Advanced Technical Information HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE sat = 600 V = 200 A = 2.1 V E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V Transient ±30	Original	PDF	200N60B OT-227B, 200n60

200n60 Abstract: No abstract text available Text: Advanced Technical Information HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE sat = 600 V = 200 A = 2.1 V E Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V Transient ±30	Original	PDF	200N60B OT-227B, 200n60
200n60 Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40	Original	PDF	PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
200n60 Abstract: 200N60A Text: VCES HiPerFAST IGBT ^C25 IXGN 200N60 600V 200A IXGN 200N60A 600V 200A V * CE sat tf. 2.5 V 350ns 2.7 V 200ns G é i V minIBLOC, SOT-227 B T e s t C o n d itio n s V CES T j = 25°C to150°C v CGR ^ v GES v’' gem Continuous ±20 V Transient ±30 V Tc = 25°C	OCR Scan	PDF	200N60 200N60A 350ns 200ns to150 OT-227 E153432 IXGN200N6Q
200n60 Abstract: u265 IXGM200N60 200N60A Text: v* CES HiPerFAST IGBT IC25 j vw C E sat t IXGN 200N60 600V 200A f 2.5 V 1350 ns IXGN 200N60A 600V 200A i 2.7 V 200 ns Symbol Maximum Ratings Test C onditions miniBLOC, SOT-227 B TO V CES T j =2 5°C to 150°C 600 V V CGR T,J = 25cC to 15 0°C; Rtab „ = 1 MQ	OCR Scan	PDF	200N60 200N60A OT-227 E153432 u265 IXGM200N60
ci 555 Abstract: ci555 C.I.555 Text: Advanced Technical Information HiPerFAST IGBT IXGN 200N60B CES ^C25 VCE sat Test Conditions Symbol Maximum Ratings SOT-227B, miniBLOC V CES Tj = 25° C to 150° C 600 V Vw CGR Tj = 25° C to 150eC; RGE = 1 MQ 600 V V GES Continuous ±20 V v GEM Transient	OCR Scan	PDF	200N60B OT-227B, 150eC; ci 555 ci555 C.I.555
7N60B Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28	OCR Scan	PDF	30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh
40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	PDF	5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
SMD diode b24 Abstract: diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode Text: QIXYS HtPerFAST _ fG&T G-Series ^ Contents A \ v CES V TO-220 IXGP TO-247 ^ TO-263 (IXGA) TO-247 SMD/.S* T0-204 miniBLOC Page 300 60 60 1.6 1.8 IXGH 30N30/.S IXGH 40N30/.S B2-4 B2-6 600 40 76 75® 75 1.8 1.8 2.5 1.8 IXGH IXGH IXGH IXGH B2-64	OCR Scan	PDF	12N100 O-220 O-263 O-247 O-247 T0-204 30N30/. 40N30/. 31N60 SMD diode b24 diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode
ixgh 1500 Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•	OCR Scan	PDF	10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a
120n60b Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *	OCR Scan	PDF	O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B

200N60 Search Results

200N60 Price and Stock

IXYS Corporation IXGN200N60B3

IXYS Corporation IXXN200N60B3

IXYS Corporation IXXX200N60B3

IXYS Corporation IXXX200N60C3

IXYS Corporation IXGN200N60

200N60 Datasheets Context Search

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200N60B

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ci 555

7N60B

40n80

SMD diode b24

ixgh 1500

120n60b