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    G50N Search Results

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    G50N Price and Stock

    Cal-Chip Electronics GMC02CG180G50NT

    CAP0201 COG 18PF 2% 50V
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    DigiKey GMC02CG180G50NT Reel 15,000 15,000
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    GMC02CG180G50NT Digi-Reel 15,000 1
    • 1 $0.1
    • 10 $0.021
    • 100 $0.0122
    • 1000 $0.00742
    • 10000 $0.0055
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    GMC02CG180G50NT Cut Tape 15,000 1
    • 1 $0.1
    • 10 $0.021
    • 100 $0.0122
    • 1000 $0.00742
    • 10000 $0.0055
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    Cal-Chip Electronics GMC10CG220G50NTD

    CAP0603 COG 22PF 2% 50V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GMC10CG220G50NTD Cut Tape 10,000 1
    • 1 $0.1
    • 10 $0.043
    • 100 $0.0252
    • 1000 $0.01589
    • 10000 $0.01215
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    GMC10CG220G50NTD Digi-Reel 10,000 1
    • 1 $0.1
    • 10 $0.043
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    • 1000 $0.01589
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    GMC10CG220G50NTD Reel 10,000 10,000
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    Cal-Chip Electronics GMC21CG152G50NTD

    CAP0805 COG 1500PF 2% 50V
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    DigiKey GMC21CG152G50NTD Cut Tape 10,000 1
    • 1 $0.38
    • 10 $0.221
    • 100 $0.1403
    • 1000 $0.09771
    • 10000 $0.08044
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    GMC21CG152G50NTD Reel 10,000 10,000
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    GMC21CG152G50NTD Digi-Reel 10,000 1
    • 1 $0.38
    • 10 $0.221
    • 100 $0.1403
    • 1000 $0.09771
    • 10000 $0.08044
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    Cal-Chip Electronics GMC10CG121G50NT

    CAP0603 COG 120PF 2% 50V
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    DigiKey GMC10CG121G50NT Cut Tape 4,000 1
    • 1 $0.1
    • 10 $0.05
    • 100 $0.0295
    • 1000 $0.01881
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    GMC10CG121G50NT Digi-Reel 4,000 1
    • 1 $0.1
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    • 100 $0.0295
    • 1000 $0.01881
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    GMC10CG121G50NT Reel 4,000 4,000
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    Bristol Electronics GMC10CG121G50NT 6,800
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    Cal-Chip Electronics GMC10CG361G50NT

    CAP0603 COG 360PF 2% 50V
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    DigiKey GMC10CG361G50NT Cut Tape 4,000 1
    • 1 $0.7
    • 10 $0.423
    • 100 $0.2788
    • 1000 $0.2022
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    GMC10CG361G50NT Digi-Reel 4,000 1
    • 1 $0.7
    • 10 $0.423
    • 100 $0.2788
    • 1000 $0.2022
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    GMC10CG361G50NT Reel 4,000 4,000
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    G50N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    G50N60HS

    Abstract: G50N60 G50N60*HS SGW50N60HS SGW50N60HS equivalent 207E-04 g50n SGW50N60 200nC IDP45E60
    Text: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    SGW50N60HS PG-TO-247-3-21 Eoff25 G50N60HS G50N60HS G50N60 G50N60*HS SGW50N60HS SGW50N60HS equivalent 207E-04 g50n SGW50N60 200nC IDP45E60 PDF

    G50N60

    Abstract: g50n60hs G50N60*HS SGW50N60HS g50n60h IDP45E60 PG-TO-247-3 SGW50N60HS equivalent SGW50N60
    Text: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    SGW50N60HS PG-TO-247-3 Eoff25 G50N60HS G50N60 g50n60hs G50N60*HS SGW50N60HS g50n60h IDP45E60 PG-TO-247-3 SGW50N60HS equivalent SGW50N60 PDF

    G50N60*HS

    Abstract: g50n60hs 200nC Eoff25 G50N60 SGW50N60HS
    Text: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    SGW50N60HS Eoff25 PG-TO-247-3-21 SGW50N60HS 100stances. G50N60*HS g50n60hs 200nC G50N60 PDF

    G50N60

    Abstract: G50N60F NGTG50N60FWG g50n NGTB50N60FWG
    Text: G50N60FWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original
    NGTG50N60FWG NGTG50N60FWD G50N60 G50N60F g50n NGTB50N60FWG PDF

    G50N60

    Abstract: 50n60 50N6 IXGH50N60A IXGH50N60AS g50n 50N60A g50n60 application DSA002033
    Text: HiPerFASTTM IGBT IXGH50N60A VCES IXGH50N60AS IC25 VCE sat tfi Surface Mountable Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 75 A I C90 TC = 90°C


    Original
    IXGH50N60A IXGH50N60AS O-247 50N60AS) G50N60 50n60 50N6 IXGH50N60A g50n 50N60A g50n60 application DSA002033 PDF

    Untitled

    Abstract: No abstract text available
    Text: Index Part Number Index Product Description Page Introduction Intro Introducing the Glenair Power Connectors Series A2 IRT Series Connectors - Rectangular Multi Pole Power Connector Intoduction A4 Technical Characteristics A5 Mating and Unmating System A9


    Original
    IRT01R31-PM IRT01R31-SM IRT01P-31PM IRT01P-31SM IRT01R-31PE IRT01R-31SE IRT01P-31EM A6854 PDF

    150 g35 capacitor

    Abstract: 150 g25 capacitor G15CG0R3 Dielectric Laboratories G15CFR NS2R G10BG2R2
    Text: GAP CAPS dielectric laboratories Precision Series Capacitors for Microwave Applications Part Number G 15 BH 100 K 5 P X 10 Product Code Gap Width In Mils Case Size Test Code Material Code Termination Code Capacitance Code Voltage Rating WVDC Tolerance Code


    Original
    030BG180 5PX20 G30BH200 G30BH220 G30BH270 G30BH300 150 g35 capacitor 150 g25 capacitor G15CG0R3 Dielectric Laboratories G15CFR NS2R G10BG2R2 PDF

    G50N60HS

    Abstract: G50N60 G50N60*HS SGW50N60HS IDP45E60 PG-TO-247-3 207E-04 SGW50N60HS equivalent
    Text: SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    SGW50N60HS PG-TO-247-3 Eoff25 G50N60HS G50N60HS G50N60 G50N60*HS SGW50N60HS IDP45E60 PG-TO-247-3 207E-04 SGW50N60HS equivalent PDF

    g50n60hs

    Abstract: G50N60 G50N60*HS SGW50N60HS g50n60h SGW50N60HS equivalent G50N60hs IGBT 207E-04 SGW50N60 PG-TO247-3
    Text: o SGW50N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original
    SGW50N60HS Eoff25 PG-TO-247-3-1 SGW50N60HS 100substances. g50n60hs G50N60 G50N60*HS g50n60h SGW50N60HS equivalent G50N60hs IGBT 207E-04 SGW50N60 PG-TO247-3 PDF

    G50N60FL

    Abstract: G50N60F G50N60 NGTB50N60FLWG NGTG50N60FLWG solar inverters circuit diagram
    Text: G50N60FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original
    NGTG50N60FLWG 100ble NGTG50N60FLW/D G50N60FL G50N60F G50N60 NGTB50N60FLWG solar inverters circuit diagram PDF

    Railway Applications

    Abstract: High-Reliability Power Connectors for Railway Applications
    Text: High-Reliability Power Connectors for Railway Applications IRT Series Rectangular Multipole High Voltage  ITS 901 Reverse Bayonet Multi Pole Medium Voltage  ITS 500 Reverse Bayonet Single Pole High Voltage  UJ Series Connection System


    Original
    PDF

    Snubber circuit Design

    Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor
    Text: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac­ teristics are closely related each other and cannot be considered independently are further, very


    OCR Scan
    30U6P42 50U6P43 75U6P43 100U6P43 Snubber circuit Design MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor PDF

    MG100g2ys1

    Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1
    Text: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series


    OCR Scan
    EG50N2YS9* G15N2YSI MG25N2YS1 MG50N2YS1 G35Q2YSI MG25Q2YS1 MG50Q2YS1 MG25S2YS1 G25N1JS1 G50N1JS1 MG100g2ys1 mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1 PDF

    MG150N2YS40

    Abstract: MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40
    Text: Connection Maximum Bating VCES V ICÌAÌ 8 15 25 G T15J101* eoo G T8J101* G T8J102(SM )* G T15J102* GT15J103(SMJ* 50 75 G T60J101* <60A) G T 80J101* GT50J1Û2+ (80A) M G 50 J1B S 1 1 MG75J1SB11 100 150 200 300 400 500 G T50J101* Q T25J101* MG25J1BS11 MG100J1BS11 MG150J1BS11


    OCR Scan
    T8J101* T8J102 T15J101* T15J102* GT15J103 T25J101* MG25J1BS11 T50J101* T60J101* 80J101* MG150N2YS40 MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40 PDF