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onsemi NVD360N65S3T4G SF3 EASY AUTO 360MOHM DPAK
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DigiKey	NVD360N65S3T4G	Digi-Reel	7,271		1	1 $2.92 10 $1.895 100 $1.3098 1000 $0.9793 10000 $0.9793	Buy Now
	NVD360N65S3T4G	Cut Tape	7,271		1	1 $2.92 10 $1.895 100 $1.3098 1000 $0.9793 10000 $0.9793	Buy Now
	NVD360N65S3T4G	Reel	5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.921	Buy Now
Avnet Americas	NVD360N65S3T4G	Reel		0 Weeks, 2 Days	685	1 - 10 - 100 - 1000 $0.92447 10000 $0.86925	Buy Now
	NVD360N65S3T4G	Reel		15 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.88755	Buy Now
Richardson RFPD	NVD360N65S3T4G				2,500	1 - 10 - 100 - 1000 - 10000 $0.92	Buy Now
Chip 1 Exchange	NVD360N65S3T4G		2,944			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	NVD360N65S3T4G			16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	NVD360N65S3T4G			17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
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Wuhan P&S	NVD360N65S3T4G		2,265		1	1 $2.57 10 $2.57 100 $1.64 1000 $1.25 10000 $1.25	Buy Now
onsemi FCMT360N65S3 MOSFET N-CH 650V 10A 4PQFN
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DigiKey	FCMT360N65S3	Digi-Reel	3,000		1	1 $2.61 10 $2.601 100 $2.0604 1000 $1.735 10000 $1.735	Buy Now
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Avnet Americas	FCMT360N65S3	Reel		0 Weeks, 2 Days	417	1 - 10 - 100 - 1000 $1.5908 10000 $1.5744	Buy Now
	FCMT360N65S3	Reel		11 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $1.67229	Buy Now
Rochester Electronics	FCMT360N65S3		5,410		1	1 $1.93 10 $1.93 100 $1.81 1000 $1.64 10000 $1.64	Buy Now
Richardson RFPD	FCMT360N65S3				3,000	1 - 10 - 100 - 1000 - 10000 $1.74	Buy Now
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PanJit Group PJMP360N60EC_T0_00001 600V SUPER JUNCTION MOSFET
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DigiKey	PJMP360N60EC_T0_00001	Tube	1,980		1	1 $3.17 10 $3.17 100 $1.4596 1000 $1.33472 10000 $1.33472	Buy Now
STMicroelectronics STW60N65M5 MOSFET N-CH 650V 46A TO247
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DigiKey	STW60N65M5	Tube	575		1	1 $10.18 10 $10.18 100 $8.025 1000 $8.025 10000 $8.025	Buy Now
Bristol Electronics	STW60N65M5		30			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi FGA60N65SMD IGBT FIELD STOP 650V 120A TO-3P
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DigiKey	FGA60N65SMD	Tube	351		1	1 $6.54 10 $6.54 100 $3.735 1000 $2.66586 10000 $2.62287	Buy Now
Avnet Americas	FGA60N65SMD	Tube		8 Weeks	450	1 - 10 - 100 - 1000 $2.59049 10000 $2.394	Buy Now
Mouser Electronics	FGA60N65SMD		2,615			1 $6.05 10 $5.94 100 $3.73 1000 $3.11 10000 $3	Buy Now
Newark	FGA60N65SMD	Bulk	735		1	1 $7.86 10 $7.66 100 $5.12 1000 $4.8 10000 $4.8	Buy Now
TME	FGA60N65SMD		58		1	1 $4.66 10 $3.69 100 $3.45 1000 $3.32 10000 $3.32	Buy Now

Richardson RFPD	FGA60N65SMD				450	1 - 10 - 100 - 1000 $2.62 10000 $2.62	Buy Now
Avnet Asia	FGA60N65SMD			8 Weeks	450	1 - 10 - 100 - 1000 $2.72506 10000 $2.59049	Buy Now
Avnet Silica	FGA60N65SMD		390	9 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FGA60N65SMD			10 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	FGA60N65SMD				450	1 - 10 - 100 - 1000 $3.5112 10000 $3.4713	Buy Now
Master Electronics	FGA60N65SMD		450			1 - 10 $5.37 100 $3.35 1000 $2.58 10000 $2.53	Buy Now
New Advantage Corporation	FGA60N65SMD		90		1	1 - 10 - 100 $4.07 1000 $4.07 10000 $4.07	Buy Now

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60N6 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
60N60		IXYS	Ultra-low Vce(sat) IGBT		Original	PDF

60N6 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
60n6 Abstract: 60N60 IC tl 072 IC100 60N60U1 Text: Low VCE sat IGBT with Diode IXGR 60N60U1 ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600	Original	60N60U1 ISOPLUS247TM IC100 60n6 60N60 IC tl 072 IC100 60N60U1	PDF
MOSFET 60n60 Abstract: 60N60 transistor 60N60 TAB 429 H Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 60N60 VDSS ID25 RDS on = 600 V = 60 A = 75 mW D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR	Original	60N60 OT-227 E153432 MOSFET 60n60 transistor 60N60 TAB 429 H	PDF
60N60C2 Abstract: ixgh60n60c2 Text: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE sat tfi typ IXGH 60N60C2 IXGT 60N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20	Original	60N60C2 IC110 O-247 O-268 728B1 123B1 728B1 065B1 60N60C2 ixgh60n60c2	PDF
IXGN60N60C2 Abstract: 60N60C2 60N60C2D1 ixgn60N60 IXGN60N60C2D1 IGBT 60N60C2D1 siemens igbt siemens igbt 75a high current igbt 60N60C2D Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A	Original	60N60C2 IXGN60N60C2D1 OT-227B, IC110 2x61-06A IXGN60N60C2 60N60C2 60N60C2D1 ixgn60N60 IGBT 60N60C2D1 siemens igbt siemens igbt 75a high current igbt 60N60C2D	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600	Original	60N60B2D1 IC110 O-264 PLUS247 2x61-06A	PDF
siemens igbt 75a Abstract: PLUS247 Text: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 60N60C2D1 VCES IXGX 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	60N60C2D1 IC110 2x61-06A siemens igbt 75a PLUS247	PDF
IXGR60N60C2 Abstract: No abstract text available Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings	Original	ISOPLUS247TM 60N60C2 60N60C2D1 IC110 IF110 IXGR60N60C2D1) ISOPLUS247 2x61-06A IXGR60N60C2	PDF
Untitled Abstract: No abstract text available Text: □ IXYS Advanced Technical Information IXFN 60N60 HiPerFET Power MOSFETs Single Die M OSFET VDSS ^D25 D DS on = 600 V = 60 A = 75 mQ N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr s Maximum Ratings Symbol Test C onditions V DSS Td = 25°C to 150°C	OCR Scan	60N60	PDF
60-06A Abstract: 60N60C2D1 60N60C2D IF110 PLUS247 Text: IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE sat C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM	Original	60N60C2D1 IC110 IF110 O-264 0-06A 60-06A 60N60C2D IF110 PLUS247	PDF
60N60C2 Abstract: gr60n60 IXGR60N60C2D1 siemens igbt 75a 60N60C2 DI GR60N60C2 60N60 ISOPLUS247 IF110 GR60N60C2D1 Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings	Original	ISOPLUS247TM 60N60C2 60N60C2D1 IC110 IF110 IXGR60N60C2D1) 2x61-06A 60N60C2 gr60n60 IXGR60N60C2D1 siemens igbt 75a 60N60C2 DI GR60N60C2 60N60 ISOPLUS247 IF110 GR60N60C2D1	PDF
3580J Abstract: No abstract text available Text: Ultra-Low VCE sat IGBT ixg n 60N60 VCES ^C 25 VCE(sat) u Ë oE Test Conditions V «s T, = 25”C to 150°C 600 VcOR ^ 600 V v GES v GEM Continuous ±20 V Transient ±30 V 'c 2 5 Tc =25«C 100 A Tc = 90°C 60 A 200 A l CM = 1 0 0 e 0.8 v CES A 'c 9 0 Maximum Ratings	OCR Scan	60N60 OT-227B, IXGN6QN60 3580J	PDF
60N60 Abstract: No abstract text available Text: IXGH 60N60 IXGK 60N60 IXGT 60N60 Ultra-Low VCE sat IGBT VCES ^C25 V C E(sat) V A V 600 75 1.6 Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES T j = 2 5 °C to 150°C 600 V Vcon T,J = 2 5 ° C to 15 0 °C; R„_ be = 1 MO 600 V v GES Continuous	OCR Scan	60N60 60N60 O-247 O-268 O-264 1999IXYS	PDF
60n60 igbt Abstract: ic 307 ex 60N60 Text: Ultra-Low VCE sat IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient	Original	60N60 OT-227B 60n60 igbt ic 307 ex 60N60	PDF
IXGH50N60BD1-P1 Abstract: ISOPLUS247TM 60N60U1 Text: Advanced Technical Information IXGR 60N60U1 Low VCE sat IGBT with Diode ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings ISOPLUS247TM (IXGR) VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ	Original	ISOPLUS247TM 60N60U1 IC100 50/60Hz, IXGH50N60BD1-P1 IXGH50N60BD1-P1 ISOPLUS247TM 60N60U1	PDF

ixgn60n60 Abstract: No abstract text available Text: H Î Y Y ^JLsIk»!? flHVw AUltra-Low VCE sat IGBT ixgn vCES 60N60 ^C25 VCE(sat) 600 V 100 A 1.6 V Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 MQ 600 V v GES Continuous	OCR Scan	60N60 OT-227BminiBLOC ixgn60n60	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C	Original	ISOPLUS247TM 60N60B2 60N60B2D1 PLUS247 E153432 IC110 2x61-06A	PDF
60N60C2D1 Abstract: No abstract text available Text: IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE sat C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM	Original	60N60C2D1 IC110 O-264 IF110 PLUS247 0-06A	PDF
MOSFET 60n60 Abstract: 60N60 IXFL60N60 Z 728 Text: HiPerFETTM Power MOSFETs IXFL 60N60 VDSS ISOPLUS264TM = 600 V = 60 A Ω = 80 mΩ ID25 Electrically Isolated Backside RDS(on) Single Die MOSFET Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	60N60 ISOPLUS264TM 728B1 123B1 728B1 065B1 MOSFET 60n60 IXFL60N60 Z 728	PDF
60n60b Abstract: PLUS247 IXGR60N60B2 SiEMENS 3 leads EC 350 2x61-06A Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C	Original	ISOPLUS247TM 60N60B2 60N60B2D1 IC110 2x61-06A 60n60b PLUS247 IXGR60N60B2 SiEMENS 3 leads EC 350 2x61-06A	PDF
60N60B2D1 Abstract: ixgk60n60b2d1 PLUS247 ixgx60n60b2d1 Text: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600	Original	60N60B2D1 IC110 2x61-06A ixgk60n60b2d1 PLUS247 ixgx60n60b2d1	PDF
60N60 Abstract: G 60N60 Text: ID1XYS Ultra-Low VCE sat IGBT IXGH 60N60 v v CES ^C25 Symbol Test Conditions Maximum Ratings v*C E S v CGR Tj = 25°C to 150°C 600 V ^ = 25DC to 150°C; RGE = 1 M£2 600 V v GES v GEM Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C, limited by leads 75	OCR Scan	60N60 O-247 60N60 G 60N60	PDF
ixgh 1500 Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•	OCR Scan	10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a	PDF
MOSFET 60n60 Abstract: IXFN SOT227 Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 60N60 VDSS ID25 RDS on = 600 V = 60 A = 75 mW D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR	Original	60N60 OT-227 E153432 MOSFET 60n60 IXFN SOT227	PDF
Untitled Abstract: No abstract text available Text: Low VCE sat IGBT with Diode IXGR 60N60U1 ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600	Original	60N60U1 ISOPLUS247TM IC100	PDF

60N6 Search Results

60N6 Price and Stock

onsemi NVD360N65S3T4G

onsemi FCMT360N65S3

PanJit Group PJMP360N60EC_T0_00001

STMicroelectronics STW60N65M5

onsemi FGA60N65SMD

60N6 Datasheets (1)

60N6 Datasheets Context Search

60n6

MOSFET 60n60

60N60C2

IXGN60N60C2

Untitled

siemens igbt 75a

IXGR60N60C2

Untitled

60-06A

60N60C2

3580J

60N60

60n60 igbt

IXGH50N60BD1-P1

ixgn60n60

Untitled

60N60C2D1

MOSFET 60n60

60n60b

60N60B2D1

60N60

ixgh 1500

MOSFET 60n60

Untitled