Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    35N120D1 Search Results

    SF Impression Pixel

    35N120D1 Price and Stock

    IXYS Corporation IXGR35N120D1

    IGBT 1200V ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGR35N120D1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    IXYS Corporation IXER35N120D1

    IGBT 1200V 50A 200W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXER35N120D1 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    IXYS Corporation IXDR35N120D1

    IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXDR35N120D1 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    35N120D1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    35N120D1

    Abstract: D-68623 IXER 35N120D1
    Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C


    Original
    PDF 35N120D1 247TM E153432 35N120D1 D-68623 IXER 35N120D1

    DIODE 0644

    Abstract: 35N120D1 IXER 35N120D1 diode RG 39
    Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50A =1200V VCES VCE sat typ. = 2.2V in ISOPLUS247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol 1200 V ± 20 V -o VGES TC = 25°C TC = 90°C


    Original
    PDF 35N120D1 ISOPLUS247TM 247TM E153432 DIODE 0644 35N120D1 IXER 35N120D1 diode RG 39

    35N120D1

    Abstract: D-68623 8200T u2003
    Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C


    Original
    PDF 35N120D1 247TM E153432 35N120D1 D-68623 8200T u2003

    35N120D1

    Abstract: D-68623 ISOPLUS weight
    Text: Advanced Technical Information IXER 35N120D1 IC25 NPT3 IGBT with Diode VCES VCE sat typ. in ISOPLUS 247TM = 50 A = 1200 V = 2.2 V ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol


    Original
    PDF 35N120D1 247TM E153432 D-68623 ISOPLUS weight

    35N120D1

    Abstract: 35n120
    Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C


    Original
    PDF 35N120D1 247TM E153432 35N120D1 35n120

    DIODE 0644

    Abstract: 35N120D1
    Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50A =1200V VCES VCE sat typ. = 2.2V in ISOPLUS247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES 1200 V ± 20 V IC25 IC90 TC = 25°C


    Original
    PDF 35N120D1 ISOPLUS247TM 247TM E153432 DIODE 0644 35N120D1

    Untitled

    Abstract: No abstract text available
    Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50A VCES =1200V VCE sat typ. = 2.2V in ISOPLUS247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate Maximum Ratings VCES TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C


    Original
    PDF 35N120D1 ISOPLUS247TM 247TM E153432

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    30N120D1

    Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1
    Text: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120


    OCR Scan
    PDF O-268 35-06C 40-06D OT-227B 50-12E 50-12BD 30N120D1 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1