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    35N120BD1 Price and Stock

    IXYS Corporation IXSX35N120BD1

    IGBT 1200V 70A 300W PLUS247
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    IXYS Corporation IXSK35N120BD1

    IGBT 1200V 70A 300W TO264
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    IXYS Corporation IXSR35N120BD1

    IGBT 1200V 70A 250W ISOPLUS247
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    IXYS Corporation IXGK35N120BD1

    IGBT 1200V 70A 350W TO264AA
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    Mouser Electronics IXGK35N120BD1
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    IXYS Corporation IXGX35N120BD1

    IGBT 1200V 70A 350W PLUS247
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    35N120BD1 Datasheets Context Search

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    35N120

    Abstract: No abstract text available
    Text: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20


    Original     		PDF 247TM 35N120BD1 728B1 35N120

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF 247TM 35N120BD1

    Untitled

    Abstract: No abstract text available
    Text: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20


    Original     		PDF 247TM 35N120BD1 728B1

    IXGX

    Abstract: No abstract text available
    Text: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 35N120B 35N120BD1 O-264 247TM 728B1 IXGX

    Untitled

    Abstract: No abstract text available
    Text: IGBT with Diode ISOPLUS 247TM IXSR 35N120BD1 Electrically Isolated Backside Short Circuit SOA Capability Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


    Original     		PDF 247TM 35N120BD1 728B1

    IXGR35N120BD1

    Abstract: igbt induction cooker induction cooker IF110 ISOPLUS247 35n120 S2300
    Text: Advanced Technical Information IXGR 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200


    Original     		PDF 35N120BD1 IC110 IF110 405B2 IXGR35N120BD1 igbt induction cooker induction cooker IF110 ISOPLUS247 35n120 S2300

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGR 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200


    Original     		PDF 35N120BD1 IC110 IF110 405B2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 35N120B 35N120BD1 35N120BD1 O-264 247TM 728B1

    35N120BD1

    Abstract: PLUS247 592 diode 35N120B 247 AA 35N12 35n120
    Text: High Voltage IGBT with Diode IXSK 35N120BD1 IXSX 35N120BD1 Short Circuit SOA Capability Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM


    Original     		PDF 35N120BD1 O-264 O-247 35N120BD1 PLUS247 592 diode 35N120B 247 AA 35N12 35n120

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGQ 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 35N120BD1 IC110 IF110 405B2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V = 70 A IC25 VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 35N120B 35N120BD1 35N120BD1 O-264 247TM 728B1

    35N120

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGQ 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 35N120BD1 IC110 IF110 35N120

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode IXSK 35N120BD1 IXSX 35N120BD1 Short Circuit SOA Capability Preliminary data sheet Symbol TO-264 AA IXSK Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous


    Original     		PDF 35N120BD1 O-264

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet HiPerFASTTM IGBT IXGK 35N120B IXGX 35N120B IXGK 35N120BD1 IXGX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE sat = 3.3 V tfi(typ) = 160 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 35N120B 35N120BD1 O-264 247TM 728B1