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IXYS Corporation IXGR40N60CD1 IGBT 600V 75A 200W ISOPLUS247
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New Advantage Corporation	IXGR40N60CD1		133		1	1 - 10 - 100 $12.45 1000 $11.62 10000 $11.62	Buy Now
IXYS Corporation IXSX40N60CD1 IGBT 600V 75A 280W PLUS247
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IXYS Corporation IXSR40N60CD1 IGBT 600V 62A 210W ISOPLUS247
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IXYS Corporation IXGN40N60CD1 IGBT MODULE 600V SOT227B
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IXYS Corporation IXSK40N60CD1 IGBT 600V 75A 280W TO264
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40N60CD1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXGR40N60 Abstract: 40n60 40N60c 40N60CD1 IXGR40N60CD1 Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 75 A = 2.5 V = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	ISOPLUS247TM 40N60C 40N60CD1 IC110 E153432 728B1 IXGR40N60 40n60 40N60c IXGR40N60CD1	PDF
Untitled Abstract: No abstract text available Text: IXSR 40N60CD1 IGBT with Diode ISOPLUS247TM VCES IC25 = 600 = 62 = 2.5 = 70 VCE SAT tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR	Original	ISOPLUS247TM 40N60CD1	PDF
40N60CD1 Abstract: PLUS247 IXSR40N60CD1 RG70 40N60C Text: IXSR 40N60CD1 IGBT with Diode ISOPLUS247TM VCES IC25 = 600 = 62 = 2.5 = 70 VCE SAT tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR	Original	40N60CD1 ISOPLUS247TM 40N60CD1 PLUS247 IXSR40N60CD1 RG70 40N60C	PDF
ixgh40n60cd1 Abstract: 40N60c 40n60 40N60CD1 C110 Text: Advanced Technical Information HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 75 A = 2.5 V = 75 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR	Original	ISOPLUS247TM 40N60C 40N60CD1 H40N60CD1 ixgh40n60cd1 40N60c 40n60 C110	PDF
Untitled Abstract: No abstract text available Text: IGBT with Diode PLUS247 TM package IXSK 40N60CD1 IXSX 40N60CD1 VCES IC25 VCE sat tfi(typ) Maximum Ratings PLUS 247TM (IXSX) Short Circuit SOA Capability = = = = 600 V 75 A 2.5 V 70 ns Preliminary data Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V	Original	PLUS247 40N60CD1 40N60CD1 247TM O-264	PDF
TO 521 MH Abstract: 40N60CD1 PLUS247 Text: IGBT with Diode TM PLUS247 package IXSK 40N60CD1 IXSX 40N60CD1 VCES IC25 VCE sat tfi(typ) Maximum Ratings PLUS 247TM (IXSX) Short Circuit SOA Capability = = = = 600 V 75 A 2.5 V 70 ns Preliminary data Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V	Original	40N60CD1 PLUS247 247TM TO 521 MH 40N60CD1 PLUS247	PDF
40N60CD1 Abstract: No abstract text available Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 75 A = 2.7 V = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	ISOPLUS247TM 40N60C 40N60CD1 IC110 065B1 728B1 123B1 728B1	PDF
IXGR40N60C Abstract: 40N60c IXGR40N60CD1 40n60 40N60CD1 IXGR40N60 Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 75 A = 2.7 V = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	ISOPLUS247TM 40N60C 40N60CD1 IC110 065B1 728B1 123B1 728B1 IXGR40N60C 40N60c IXGR40N60CD1 40n60 IXGR40N60	PDF
transistor 12n60c Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design	Original	ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET	PDF
b1113 Abstract: diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14 Text: SCSOA IGBT S-Series Contents IGBT with Fast Diode VCES max IC Low VCE sat TC = 25 °C VCE(sat) max PLUS247 ISOPLUS (IXSX) 247TM (IXSR) TC = 25 °C TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page V A V 600 32 1.8 ➤IXSH 16N60U1 B1-4 48 2.2	Original	PLUS247 247TM O-247 O-264 O-268 16N60U1 24N60U1 30N60U1 62N60U1 24N60AU1 b1113 diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14	PDF
Untitled Abstract: No abstract text available Text: □ IX Y S Advanced Technical Information IXSK 40N60CD1 IXSX 40N60CD1 IGBT with Diode PLUS247 package ^fi typ V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C, limited by leads	OCR Scan	40N60CD1 PLUS247â	PDF
12N60c equivalent Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t	OCR Scan	ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q	PDF