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    IRFY430M Search Results

    IRFY430M Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFY430M International Rectifier 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Original PDF
    IRFY430M Semelab N-Channel Power MOSFET for HI-REL Applications Original PDF
    IRFY430M International Rectifier Government / Space Products - High Reliability Power MOSFETS Scan PDF
    IRFY430M International Rectifier HEXFET Transistors Scan PDF
    IRFY430M-T257 Semelab N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Original PDF
    IRFY430M-T257 Semelab N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Original PDF

    IRFY430M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFY430M IRFY430M MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS ID(cont) RDS(on) 12.70 19.05 1 2 3 0.89 1.14 2.54 BSC 2.65


    Original     		PDF IRFY430M IRFY430M IRFY430 IRFY430" IRFY430 IRFY430C IRFY430C-JQR-B IRFY430-JQR-B IRFY430M-T257

    37ATC

    Abstract: IRFY430 IRFY430M
    Text: IRFY430M IRFY430M MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS ID(cont) RDS(on) 12.70 19.05 1 2 3 0.89 1.14 2.54 BSC 2.65


    Original     		PDF IRFY430M IRFY430 00A/ms 300ms, 37ATC IRFY430 IRFY430M

    717 MOSFET

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD226305 SHD226305B TECHNICAL DATA DATA SHEET 336, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 1.6 Ohm MOSFET œ Isolated and Hermetically Sealed œ Equivalent to IRFY430M MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD226305 SHD226305B IRFY430M O-257 717 MOSFET

    IRFY430M

    Abstract: SHD226305 SHD226305B 717 MOSFET
    Text: SENSITRON SEMICONDUCTOR SHD226305 SHD226305B TECHNICAL DATA DATA SHEET 336, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 1.6 Ohm MOSFET œ Isolated and Hermetically Sealed œ Equivalent to IRFY430M MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.


    Original     		PDF SHD226305 SHD226305B IRFY430M IRFY430M SHD226305 SHD226305B 717 MOSFET

    9528

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFET IRFY430 / IRFY430M • BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF IRFY430 IRFY430M O-257AB O220M O-257AB) IRFY430M 9528

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFET IRFY430 / IRFY430M • BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF IRFY430 IRFY430M O-257AB 280mJ O220M O-257AB) IRFY430

    IRFY430M-T257

    Abstract: diode 75W
    Text: IRFY430M-T257 MECHANICAL DATA Dimensions in mm inches 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420) N–CHANNEL


    Original     		PDF IRFY430M-T257 O257AA 00A/ms 300ms, IRFY430M-T257 diode 75W

    37ATC

    Abstract: IRFY430M-T257
    Text: IRFY430M-T257 MECHANICAL DATA Dimensions in mm inches 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420) N–CHANNEL


    Original     		PDF IRFY430M-T257 O257AA 00A/ms 300ms, 37ATC IRFY430M-T257

    specification of mosfet irf

    Abstract: IRFY430 IRFY430C IRFY430CM IRFY430M
    Text: PD - 94191 POWER MOSFET THRU-HOLE TO-257AA IRFY430,IRFY430M 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) IRFY430 1.5 Ω 4.5A ID Glass Eyelets IRFY430M 1.5 Ω 4.5A Glass HEXFET® MOSFET technology is the key to International


    Original     		PDF O-257AA) IRFY430 IRFY430M IRFY430 IRFY430, O-257AA specification of mosfet irf IRFY430C IRFY430CM IRFY430M

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    2n4441 transistor

    Abstract: SML1004RGN IRFV360 semelaB irfy430 BUZ10 BUZ50 2N6661 BYV34 Series 2N4441 BYV29 Series
    Text: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS M E TA L PA C K A G E S F O R N E W D E S I G N S TO257 TO254 TO258 TO267 Tabless Z-Tab Flexy-Lead P O W E R M O S F E T S , T R A N S I S T O R S , D I O D E S , V O L TA G E R E G U L AT O R S


    Original     		PDF O257AA O257AB* IP117AG IP117AHVG IP117G IP117HVG IP120AG-05-12-15 IP120G-05-12-15 IP123AG-05-12-15 2n4441 transistor SML1004RGN IRFV360 semelaB irfy430 BUZ10 BUZ50 2N6661 BYV34 Series 2N4441 BYV29 Series