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    International Rectifier IRFR9012

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    IRFR9012 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFR9012 International Rectifier P-Channel HEXFET Transistors, 50 Volt, 0.50 Ohm Scan PDF
    IRFR9012 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFR9012 Unknown FET Data Book Scan PDF
    IRFR9012 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFR9012 Samsung Electronics P-Channel Power MOSFETS Scan PDF

    IRFR9012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFR9012

    Abstract: SiHFR9012
    Text: IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.70 Qg (Max.) (nC) 9.1 Qgs (nC) 3.0 Qgd (nC) 5.9 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9012, SiHFR9012)


    Original     		PDF IRFR9012, IRFU9012, SiHFR9012 SiHFU9012 O-251) O-252) IRFR9012

    IRFR9012

    Abstract: SiHFR9012
    Text: IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.70 Qg (Max.) (nC) 9.1 Qgs (nC) 3.0 Qgd (nC) 5.9 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9012, SiHFR9012)


    Original     		PDF IRFR9012, IRFU9012, SiHFR9012 SiHFU9012 2002/95/EC. 2002/95/EC IRFR9012

    IRFR9012

    Abstract: IRFU9012 SiHFR9012
    Text: IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.70 Qg (Max.) (nC) 9.1 Qgs (nC) 3.0 Qgd (nC) 5.9 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9012, SiHFR9012)


    Original     		PDF IRFR9012, IRFU9012, SiHFR9012 SiHFU9012 O-251) O-252) IRFR9012 IRFU9012

    IRFR9012

    Abstract: SiHFR9012
    Text: IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.70 Qg (Max.) (nC) 9.1 Qgs (nC) 3.0 Qgd (nC) 5.9 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9012, SiHFR9012)


    Original     		PDF IRFR9012, IRFU9012, SiHFR9012 SiHFU9012 2011/65/EU 2002/95/EC. IRFR9012

    IRFR9012

    Abstract: SiHFR9012
    Text: IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.70 Qg (Max.) (nC) 9.1 Qgs (nC) 3.0 Qgd (nC) 5.9 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9012, SiHFR9012)


    Original     		PDF IRFR9012, IRFU9012, SiHFR9012 SiHFU9012 11-Mar-11 IRFR9012

    IRFR9012

    Abstract: SiHFR9012
    Text: IRFR9012, IRFU9012, SiHFR9012, SiHFU9012 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.70 Qg (Max.) (nC) 9.1 Qgs (nC) 3.0 Qgd (nC) 5.9 Configuration Single IPAK (TO-251) G D D G S G Surface Mountable (Order as IRFR9012, SiHFR9012)


    Original     		PDF IRFR9012, IRFU9012, SiHFR9012 SiHFU9012 2011/65/EU 2002/95/EC. IRFR9012

    Untitled

    Abstract: No abstract text available
    Text: IRFR010, SiHFR010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration Single DESCRIPTION D The power MOSFET technology is the key to Vishay’s


    Original     		PDF IRFR010, SiHFR010 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G Low Drive Current Surface Mount Fast Switching Ease of Paralleling


    Original     		PDF IRFR010, SiHFR010 O-252) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling


    Original     		PDF IRFR010, SiHFR010 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling


    Original     		PDF IRFR010, SiHFR010 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFR9012

    Abstract: No abstract text available
    Text: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling


    Original     		PDF IRFR010, SiHFR010 2002/95/EC 11-Mar-11 IRFR9012

    IRFR9012

    Abstract: No abstract text available
    Text: IRFR010, SiHFR010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration Single DESCRIPTION D The power MOSFET technology is the key to Vishay’s


    Original     		PDF IRFR010, SiHFR010 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 IRFR9012

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    irfb220

    Abstract: TO-251AA 251AA 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212 T0-251
    Text: - 1 f « ± £ *£ Ta=25tC SI € tt € Id Pd r Vds Vgs or * /CH * /CH * Vdg ft 1RFPG50 1RFPG52 IRFRG10 IRFR012 IRFR020 IRFR032 IRFR110 IRFR111 IRFR120 IRFR121 IRFR210 IRFR212 IRFR220 IRFR222 IRFR9010 IRFR9012 1R F R 9 0 2 0 1R F R 9 0 2 2 IRFR9110 IRFR9111


    OCR Scan     		PDF 1HFPG50 O-247AC T0-247AC O-251AA IRFR9222 O-243AA IRFU010 irfb220 TO-251AA 251AA 251C IRFR020 IRFR120 IRFR121 IRFR210 IRFR212 T0-251

    IRFR9010

    Abstract: irfu9010 IRFR9012 IRFU9012 IRFR9010TR HMSC
    Text: he d | Nass4sa ooaaBoa i | Data Sheet No. PD-9.516A I N T ERNATIONAL R E C T IFIER INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFRSOIO IRFRS01S IRFU9010 IRFU9Q1S P -C H A N N E L Product Summary - 5 0 Volt, 0.50 Ohm HEXFET


    OCR Scan     		PDF IRFR9010 IRFU9010 IRFU9012 IRFR9010, IRFR9012, IRFU9010, IRFU9012 IRFR9010TR IRFR9010 irfu9010 IRFR9012 HMSC

    IRFP9640

    Abstract: 1RFR320 IRFP9610 IRFP9640 SAMSUNG IRFR120 IRFP9630 IRFP9622 D-PAK IRFP9621 IRFP9631
    Text: - 302 - §y =s tt f m t Vd s or « A £ Vg s Vd g % V (V) fë (Ta=25tO ) Id it Ig s s Pd * /CH * /CH (A) m V g s th) loss (nA) Vg s (V) < m A) Vd s (V) min max (V) (V) % fà 1D (nA) tä (Ta=25cC ) lö(on) Ds(on) Vd s = Vg s Ciss g fs Coss B Crss V g s =0


    OCR Scan     		PDF 1RFP9620 O-220 IRFP9621 IRFP9622 IRFR120 IRFR121 IRFR210 IRFR212 IRFR220 IRFR222 IRFP9640 1RFR320 IRFP9610 IRFP9640 SAMSUNG IRFP9630 D-PAK IRFP9631

    irf9010

    Abstract: D0123 irf90 9015 Free 9014 IRF901 V. 9015 c J77A irfu9010 irfr9010
    Text: SAMSUNG ELECTRONICS INC b4E T> • T'ibMlMZ 0Ü153L.D IRFR9 0 1 0/1 2 /14/15 IRFU9 0 1 0/12/14/15 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • ■ SMGK D-PACK Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		PDF IRFR9010/12/14/15 IRFU9010/12/14/15 IRFR9010/U9010 IRFR901 2/U901 4/U9014 IRFR9015/U9015 IRFR9014/9015 irf9010 D0123 irf90 9015 Free 9014 IRF901 V. 9015 c J77A irfu9010 irfr9010

    IRF 850 mosfet

    Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
    Text: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF


    OCR Scan     		PDF O-220 IR9523 IRF9522 IRF9513 IRF9511 IRF9512 IRF9510 IRF9623 IRF9621 IRF9622 IRF 850 mosfet MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    IRFP9640

    Abstract: IRFP9610 IRFS1Z3 irfb220 IRFS1Z0 IRFP9630 251C IRFR020 IRFR120 IRFR121
    Text: - SI € tt f « r Vd s or € ± * Vd g ft V £ Vg s (V) 1 *£ (Ta=25tC ) Ig s s Pd Id * /CH * /CH (A) (W) V g s th) Id s s (nA) Vg s (V) ( M A) Vd s (V) min max (V) (V) n ft '14 Ciss 9 fs Coss Crss ft B ffi % V g s =0 (max) *typ V g s (V) (0) Id (A) *typ


    OCR Scan     		PDF 1HFPG50 O-247AC T0-247AC IRFR120 IRFR121 IRFR210 IRFR212 IRFR220 IRFR222 IRFR310 IRFP9640 IRFP9610 IRFS1Z3 irfb220 IRFS1Z0 IRFP9630 251C IRFR020

    IRF740 "direct replacement"

    Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
    Text: CROSS REFERENCE GUIDE POWER MOSFETs Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­


    OCR Scan     		PDF IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


    OCR Scan     		PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N

    fu 9014

    Abstract: FR9014 fu9014
    Text: IRFR9010/12/14/15 IRFU9010/12/14/15 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PACK Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area


    OCR Scan     		PDF IRFR9010/12/14/15 IRFU9010/12/14/15 FR901 IRFR901 fu 9014 FR9014 fu9014