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    IRF9610 IR Search Results

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    IRF9610 IR Price and Stock

    Vishay Intertechnologies IRF9610PBF

    MOSFETs TO220 200V 1.8A P-CH MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IRF9610PBF 2,853
    • 1 $1.26
    • 10 $0.902
    • 100 $0.818
    • 1000 $0.7
    • 10000 $0.673
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    Vishay Intertechnologies IRF9610PBF-BE3

    MOSFETs TO220 200V 1.8A P-CH MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IRF9610PBF-BE3 2,227
    • 1 $1.06
    • 10 $0.767
    • 100 $0.767
    • 1000 $0.673
    • 10000 $0.673
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    Vishay Intertechnologies IRF9610SPBF

    MOSFETs TO263 200V 1.8A P-CH MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IRF9610SPBF 2,159
    • 1 $1.88
    • 10 $1.5
    • 100 $1.07
    • 1000 $0.817
    • 10000 $0.787
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    Vishay Intertechnologies IRF9610STRRPBF

    MOSFETs TO263 200V 1.8A N-CH MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IRF9610STRRPBF 538
    • 1 $0.87
    • 10 $0.709
    • 100 $0.552
    • 1000 $0.363
    • 10000 $0.325
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    Samsung Semiconductor IRF9610

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com IRF9610 25
    • 1 $2.51
    • 10 $2.51
    • 100 $1.2
    • 1000 $0.56
    • 10000 $0.56
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    IRF9610 IR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 COMPLIANT • Lead (Pb)-free Available DESCRIPTION


    Original     		PDF IRF9610, SiHF9610 O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements


    Original     		PDF IRF9610, SiHF9610 O-220 O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    irf9610

    Abstract: irf9610pbf
    Text: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements


    Original     		PDF IRF9610, SiHF9610 O-220 12-Mar-07 irf9610 irf9610pbf

    IRF9610

    Abstract: DATASHEET irf9610 IRF9610PBF MOSFET SiHF9610 SiHF9610-E3
    Text: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements


    Original     		PDF IRF9610, SiHF9610 O-220 O-220 18-Jul-08 IRF9610 DATASHEET irf9610 IRF9610PBF MOSFET SiHF9610-E3

    IRF9610

    Abstract: SiHF9610 SiHF9610-E3
    Text: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements


    Original     		PDF IRF9610, SiHF9610 O-220 O-220 18-Jul-08 IRF9610 SiHF9610-E3

    IRF9610

    Abstract: No abstract text available
    Text: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements


    Original     		PDF IRF9610, SiHF9610 O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF9610

    Untitled

    Abstract: No abstract text available
    Text: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements


    Original     		PDF IRF9610, SiHF9610 O-220 O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF9610

    Abstract: SiHF9610 SiHF9610-E3
    Text: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements


    Original     		PDF IRF9610, SiHF9610 O-220 O-220 11-Mar-11 IRF9610 SiHF9610-E3

    Untitled

    Abstract: No abstract text available
    Text: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements


    Original     		PDF IRF9610, SiHF9610 O-220 O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements


    Original     		PDF IRF9610, SiHF9610 O-220 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: P-Channel MOSFET Transistors Part No. J174 J175 Drain-Source On-State Braekdown DS Current Voltage BVDSS V ID(ON)(A) 30.00 30.00 1.00 .50 Static DS Resistance Part No. RDS(ON)(Ω) 85 125 J176 J270 Drain-Source On-State Braekdown DS Current Voltage Static DS


    Original     		PDF IRF9520 IRF9540 IRF9610 IRF9640 50/Tube IRF9Z20

    IRF9610

    Abstract: IRF9611
    Text: P-CHANNEL POWER MOSFETS IRF9610/9611 FEATURES • Lower R dsion • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRF9610/9611 IRF9610 -200V IRF9611 -150V

    IRF9610

    Abstract: IRF961 IR 9613 IRF9612 IRF9613 F9610 IR mosfets 9611
    Text: P-CHANNEL POWER MOSFETS IRF9610/9611/9612/9613 FEATURES • • • • • • • Lower Rds <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRF9610/9611/9612/9613 IRF9610 IRF9612 IRF9613 IRF961 IR 9613 F9610 IR mosfets 9611

    SM 9613

    Abstract: 9611 IR 9613 IRF9612 IRF961
    Text: P-CHANNEL POWER MOSFETS IRF9610/9611/9612/9613 FEATURES • • • • • • • Lower Rds <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


    OCR Scan     		PDF IRF9610/9611/9612/9613 IRF961 -150V SM 9613 9611 IR 9613 IRF9612

    IRF9612

    Abstract: IRF9610 IRF610 complementary IRF9613 DIODE C352 IRF9611 F9613 C350H 9350e
    Text: h e D I massmss ooaabOG s | Data Sheet No. PD-9.350E INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRF9610 IRF9611 P-CHANNEL SOOVOLT DEVICES IRF9612 IRF9613 -200 Volt, 3.0 Ohm HEXFET T0-220AB Plastic Package Product Summary


    OCR Scan     		PDF IRF9610 IRF9611 IRF9612 IRF9613 T0-220AB IRF9610, IRF9611, IRF9612, IRF9613 T-39-19 IRF610 complementary DIODE C352 F9613 C350H 9350e

    irf9610 samsung

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bME D • 7^b4142 0Q122bb SBQ « S M G K P-CHANNEL POWER MOSFETS IRF9610/9611 /9612/9613 FEATURES • • • • • • • Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance


    OCR Scan     		PDF b4142 0Q122bb IRF9610/9611 IRF9610 IRF9611 IRF9612 IRF9613 irf9610 samsung

    1rf9610

    Abstract: IRF9610 IRF9610S ScansUX102 afra marking
    Text: PD-9.350F International l»51 Rectifier IRF9610 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements V Ds s = - 2 0 0 V ^DS on = 3 - 0 0 ln = -1.8A Description DATA SHEETS The HEXFET technology is the key to International Rectifier’s advanced line


    OCR Scan     		PDF IRF9610 -200V O-220 1RF9610S 1rf9610 IRF9610S ScansUX102 afra marking

    Untitled

    Abstract: No abstract text available
    Text: 4Û55452 QOmabb fl?b • INR International Rectifier IRF9610 bSE J> INTER-NATIONAL RECTIFIER HEXFET Power M O S FE T • • • • • PD-9.350F Dynamic dv/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements V pss ~ "200V R DS on =


    OCR Scan     		PDF IRF9610

    IRF9610

    Abstract: irf9610 144 irf9610 IR
    Text: PD-9.350F International iraRi Rectifier IRF9610 H EXFET Power M O S F E T • • • • • Dynamic dv/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = -200V R DS on = 3 0 i 2 lD = -1.8A Description DATA SHEETS The H E X F E T technology is the key to International Rectifier’s advanced line


    OCR Scan     		PDF IRF9610 -200V O-220 T0-220 acce40 075BVDSS IRF9610 irf9610 144 irf9610 IR

    IRF740 "direct replacement"

    Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
    Text: CROSS REFERENCE GUIDE POWER MOSFETs Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­


    OCR Scan     		PDF IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


    OCR Scan     		PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N

    IRF9511

    Abstract: IRF9Z15 IRF9613 IRF9632 IRF9631 IRF9643 IRF9642 IRF9641
    Text: FUNCTION GUIDE POWER MOSFETs TO-220 P-CHANNEL B Vdss V Part Number ID(onXA) RDS(onXn) -4 .0 0 -4 .7 0 -8 .9 0 -9 .8 0 -15 .0 0 -18 .0 0 0.70 0.50 0.33 0.28 0.21 0.14 IRF9Z12 IRF9Z10 IRF9Z22 IRF9Z20 IRF9Z32 IRF9Z30 - 60.00 -2 .5 0 -3 .0 0 -4 .0 0 -4 .7 0


    OCR Scan     		PDF O-220 IRF9Z12 IRF9Z10 IRF9Z22 IRF9Z20 IRF9Z32 IRF9Z30 IRF9513 IRF9511 IRF9Z15 IRF9613 IRF9632 IRF9631 IRF9643 IRF9642 IRF9641

    IRF9610

    Abstract: IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE
    Text: SflE D THOMSON/ DI STR IBUTOR • TnEhfl?3 0005003 ■ TCSK International SR ecB fier HEXFET Power MOSFETs Plastic Insertable Package TO-220 P-Channel Part Number Vos Drain Source Voltage Volts IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540


    OCR Scan     		PDF O-220 IRF9512 TQ-220AB IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540 IRF9610 IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1