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    IRF9Z22 Search Results

    IRF9Z22 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRF9Z22 International Rectifier P-CHANNEL 50 VOLT POWER MOSFETs Scan PDF
    IRF9Z22 International Rectifier TO-220 HEXFET Power MOSFET Scan PDF
    IRF9Z22 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF9Z22 Unknown FET Data Book Scan PDF
    IRF9Z22 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF9Z22 Samsung Electronics P-Channel Power MOSFETS Scan PDF

    IRF9Z22 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S The Power MOSFET technology is the key to Vishay’s


    Original     		PDF IRF9Z22, SiHF9Z22 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S The Power MOSFET technology is the key to Vishay’s


    Original     		PDF IRF9Z22, SiHF9Z22 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF9Z22

    Abstract: No abstract text available
    Text: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single S P-Channel Versatility Compact Plastic Package Fast Switching Low Drive Current


    Original     		PDF IRF9Z22, SiHF9Z22 O-220 18-Jul-08 IRF9Z22

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S The Power MOSFET technology is the key to Vishay’s


    Original     		PDF IRF9Z22, SiHF9Z22 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S The Power MOSFET technology is the key to Vishay’s


    Original     		PDF IRF9Z22, SiHF9Z22 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF9Z22,SiHF9Z22_RC

    Abstract: SIHF9Z22 760167
    Text: IRF9Z22,SiHF9Z22_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF9Z22 SiHF9Z22 AN609, 1672m 4327m 2001m 2791m 8787m 3904m 1208u IRF9Z22,SiHF9Z22_RC 760167

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S The Power MOSFET technology is the key to Vishay’s


    Original     		PDF IRF9Z22, SiHF9Z22 18-Jul-08

    IRF9Z20

    Abstract: IRF9Z22 SiHF9Z20 SiHF9Z20-E3
    Text: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single TO-220AB G D P-Channel Versatility Compact Plastic Package Fast Switching


    Original     		PDF IRF9Z20, SiHF9Z20 O-220AB 2002/95/EC 11-Mar-11 IRF9Z20 IRF9Z22 SiHF9Z20-E3

    THERMISTOR NTC 100K

    Abstract: tip42a 2N7000 "direct replacement"
    Text: U-509 Using the bq2007 Enhanced Features for Fast Charge voltage threshold MCV . To avoid possible premature fast-charge termination when charging batteries after long periods of storage, the bq2007 disables PVD, and -∆V detection during a short “hold-off” period at the start


    Original     		PDF U-509 bq2007 bq2007 bq200customer THERMISTOR NTC 100K tip42a 2N7000 "direct replacement"

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single TO-220AB G D P-Channel Versatility Compact Plastic Package Fast Switching


    Original     		PDF IRF9Z20, SiHF9Z20 O-220AB 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    24v dc power supply with uc3842

    Abstract: unitrode Applications Note U-96A UC3842 note buck converter non isolated 24v to 12v dc power supply with uc3842 uc3842 dc/dc converter 24v application circuits U-96A UCC3804 application UC3842 application 24V uc3842 unitrode 100 watt boost uc3842 application note
    Text: APPLICATION NOTE U-133A UCC 3800/1/2/3/4/5 BiCMOS CURRENT MODE CONTROL ICs BILL ANDREYCAK INTRODUCTION Power supply design has become increasingly more challenging as engineers confront the difficulties of obtaining higher power density, improved performance and lower cost. The control for many of these


    Original     		PDF U-133A UC3842 24v dc power supply with uc3842 unitrode Applications Note U-96A UC3842 note buck converter non isolated 24v to 12v dc power supply with uc3842 uc3842 dc/dc converter 24v application circuits U-96A UCC3804 application UC3842 application 24V uc3842 unitrode 100 watt boost uc3842 application note

    Untitled

    Abstract: No abstract text available
    Text: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single P-Channel Versatility Compact Plastic Package Fast Switching Low Drive Current


    Original     		PDF IRF9Z20, SiHF9Z20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRF9Z20

    Abstract: No abstract text available
    Text: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single TO-220AB G D P-Channel Versatility Compact Plastic Package Fast Switching


    Original     		PDF IRF9Z20, SiHF9Z20 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF9Z20

    UC3842 note buck converter non isolated

    Abstract: uc3842 unitrode 100 watt U-96A boost uc3842 application note UC3842 application 24V UCC3801 schematic unitrode Applications Note U-96A ucc3804 24v dc power supply with uc3842 buck uc3842 application note
    Text: APPLICATION NOTE U-133A UCC 3800/1/2/3/4/5 BiCMOS CURRENT MODE CONTROL ICs BILL ANDREYCAK INTRODUCTION Power supply design has become increasingly more challenging as engineers confront the difficulties of obtaining higher power density, improved performance and lower cost. The control for many of these


    Original     		PDF U-133A UC3842 hU-97 DN-42 UCC3802 UC3842 note buck converter non isolated uc3842 unitrode 100 watt U-96A boost uc3842 application note UC3842 application 24V UCC3801 schematic unitrode Applications Note U-96A ucc3804 24v dc power supply with uc3842 buck uc3842 application note

    IRF9511

    Abstract: IRF9Z15 IRF9613 IRF9632 IRF9631 IRF9643 IRF9642 IRF9641
    Text: FUNCTION GUIDE POWER MOSFETs TO-220 P-CHANNEL B Vdss V Part Number ID(onXA) RDS(onXn) -4 .0 0 -4 .7 0 -8 .9 0 -9 .8 0 -15 .0 0 -18 .0 0 0.70 0.50 0.33 0.28 0.21 0.14 IRF9Z12 IRF9Z10 IRF9Z22 IRF9Z20 IRF9Z32 IRF9Z30 - 60.00 -2 .5 0 -3 .0 0 -4 .0 0 -4 .7 0


    OCR Scan     		PDF O-220 IRF9Z12 IRF9Z10 IRF9Z22 IRF9Z20 IRF9Z32 IRF9Z30 IRF9513 IRF9511 IRF9Z15 IRF9613 IRF9632 IRF9631 IRF9643 IRF9642 IRF9641

    irf9110

    Abstract: SOT-123 IRF224 irf113 1rf48 BUZ10 BUZ63 IRF9122 irfl33 IRF034
    Text: - 250 - Ta=25<1C f m € tt € t Vd s or 4- V d g Vg s (V) (V) If l: * /CH * /CH (A) (W) V g s th) 1DSS Jg s s Pd Id max (nA) Vg s (V) C m A) Vd s (V) (V) (V) Id (mA) ff] % ft 1± Ciss (max) *typ V g s ( 0 ) (V) *typ (A) Id (A) 140* -25 TO-220AB 190* 25 TO-220AB


    OCR Scan     		PDF 1RF9Z32 O-220AB 1RF48 IRF034 BUZ171 O-220ftB irf120 to-204aa irf9110 SOT-123 IRF224 irf113 BUZ10 BUZ63 IRF9122 irfl33

    SOT-123

    Abstract: IRF9110 PHILIPS TO220 blf544b BLF246 BLF348 irc224 IRC350 IRC530 IRC832
    Text: - % % A f ft i Vd s or Vd g tt £ i T Vg s Ta=25'C) «É. Ig s s Id Pd * /C H * /CH (W) Vds (V) Id (nA) g fs Io(on) C ís s Coss ft B m ♦typ Vg s (V) (0) Id (A) * ty p (A) Vg s (V) *typ (S) Id (max) (max) (max) % (A) (pF) (pF) (pF) Vd s (V) % (V) P '200 ± 2 0


    OCR Scan     		PDF 2k6847 o-205af 2n6849 2n6851 OT-268 BIF548 OT-262 IRF9Z10 O-220 SOT-123 IRF9110 PHILIPS TO220 blf544b BLF246 BLF348 irc224 IRC350 IRC530 IRC832

    U-96A

    Abstract: uc3842 unitrode 100 watt unitrode Applications Note U-96A pwm led driver using uc3842 UNITRODE u96A 24v to 5v dc power supply with uc3842 UC3842 note buck converter non isolated UCC3801 schematic 24v dc power supply with uc3842 u96A
    Text: y APPLICATION NOTE U-133A UCC 3800/1/2/3/4/5 BiCMOS CURRENT MODE CONTROL ICs BILL ANDREYCAK INTRODUCTION Power supply design has become increasingly more challenging as engineers confront the difficulties of obtaining higher power density, improved performance and lower cost. The control for many of these


    OCR Scan     		PDF U-133A UC3842 PE-64973 U-96A uc3842 unitrode 100 watt unitrode Applications Note U-96A pwm led driver using uc3842 UNITRODE u96A 24v to 5v dc power supply with uc3842 UC3842 note buck converter non isolated UCC3801 schematic 24v dc power supply with uc3842 u96A

    1rf730

    Abstract: IRF9513 IRF9521 irfbf30 IRFBG30 THOMSON DISTRIBUTOR 58e d IRF9511 IRF9523 IRFBC30 IRFBE32
    Text: THO d SO N/ D I S T R I B U T O R SflE D • T02t.ñ73 0 D D S Ô D 2 52S ■ International Rectifier TCSK HEXFET Power MOSFETs Plastic Insertable Package TO-220 N-Channel >DM Pu'*« Drain Current Amps Pp Max Power Dissipation (Watts) 1.7 2.0 2.8 3.3 4.5


    OCR Scan     		PDF O-220 IRF712 T0-22QAB IRF710 IRF722 IRF720 IRF732 IRF730 IRF742 IRF740 1rf730 IRF9513 IRF9521 irfbf30 IRFBG30 THOMSON DISTRIBUTOR 58e d IRF9511 IRF9523 IRFBC30 IRFBE32

    irf9z20

    Abstract: No abstract text available
    Text: P-CHANNEL POWER MOSFETS IRF9Z20/Z22 FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRF9Z20/Z22 IRF9Z20 IRF9Z22

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan     		PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E

    P3055E

    Abstract: motorola p3055e p23p06 2N3804 9439 2n P3055EL zener 1n 4148 1N4148H av dc tec ne 5231B diode
    Text: B EN C H M AR Q _ Using the bq2005 to Control Fast Charge Introduction T his application note describes th e use a n d functions of th e bq2005 con tro llin g a c u rre n t source to fa st ch arg e N iC d o r N iM H b a tte rie s. T h e bq2005 m ay also se rv e a s


    OCR Scan     		PDF bq2005 bq2005 197-103LA6-A01 C100Y103J P3055E motorola p3055e p23p06 2N3804 9439 2n P3055EL zener 1n 4148 1N4148H av dc tec ne 5231B diode

    z24 mosfet

    Abstract: IRF9Z25 IRF9Z20 IRF9Z22 IRF9Z24
    Text: SAMSUNG ELECTRONICS INC b4E D inrv£.¿m¿.¿s IRF9Z20/Z22 • 7Tb4142 DülSSTH 4^5 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • SMGK TO-220 Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		PDF IRF9Z20/Z22 7Tb4142 122T4 IRF9Z20 IRF9Z24 IRF9Z22 IRF9Z25 z24 mosfet

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1