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    IRF530 DATASHEET Search Results

    IRF530 DATASHEET Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    HS9-26C31RH-T Renesas Electronics Corporation Quad, 5.0V Differential Line Driver, CMOS Enable Class T Datasheet Visit Renesas Electronics Corporation
    HS1-26C31RH-T Renesas Electronics Corporation Quad, 5.0V Differential Line Driver, CMOS Enable Class T Datasheet Visit Renesas Electronics Corporation

    IRF530 DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF530

    Abstract: tr irf530
    Text: IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF530 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.16 Ω 14 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE


    Original     		PDF O-220 IRF530 O-220 IRF530 tr irf530

    irf530

    Abstract: IRF530 mosfet datasheet of irf530 IRF530 marking OF IRF530 tr irf530 irf530 circuit airbag
    Text: IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF530 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.16 Ω 14 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE


    Original     		PDF IRF530 O-220 irf530 IRF530 mosfet datasheet of irf530 IRF530 marking OF IRF530 tr irf530 irf530 circuit airbag

    IRF530

    Abstract: tr irf530
    Text: IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF530 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.16 Ω 14 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE


    Original     		PDF IRF530 O-220 IRF530 tr irf530

    RF1S540

    Abstract: RF1S540SM9A RF1S530SM OF IRF530 530uH
    Text: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530, RF1S530SM Data Sheet May 2000 14A, 100V, 0.160 Ohm, N-Channel Power


    Original     		PDF IRF530, RF1S530SM IRF53 O220AB O263AB RF1S540 RF1S540SM9A RF1S530SM OF IRF530 530uH

    IRF530 mosfet

    Abstract: TA17411 IRF530 TB334 irf530g
    Text: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530 Data Sheet February 2002 14A, 100V, 0.160 Ohm, N-Channel Power


    Original     		PDF IRF53 O220AB O263AB IRF530 IRF530 mosfet TA17411 IRF530 TB334 irf530g

    IRF530

    Abstract: IRF530T IRF530 fairchild 929e1 980E3 IRF530 mosfet ON semiconductor N51 IRF530 application
    Text: IRF530 Data Sheet January 2002 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Features Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF IRF530 O-220AB IRF530 IRF530T IRF530 fairchild 929e1 980E3 IRF530 mosfet ON semiconductor N51 IRF530 application

    cds photo diode

    Abstract: IRF530 marking
    Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature


    Original     		PDF IRF530, SiHF530 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 cds photo diode IRF530 marking

    91019-04

    Abstract: No abstract text available
    Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature


    Original     		PDF IRF530, SiHF530 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 91019-04

    Untitled

    Abstract: No abstract text available
    Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature


    Original     		PDF IRF530, SiHF530 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature


    Original     		PDF IRF530, SiHF530 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature


    Original     		PDF IRF530, SiHF530 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature


    Original     		PDF IRF530, SiHF530 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature


    Original     		PDF IRF530, SiHF530 2002/95/EC O-220AB O-220AB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: ^Pioducti, Una. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 IRF530 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF530 300ns, 530nH,

    IRF530

    Abstract: No abstract text available
    Text: HV301/HV311 HV301 HV311 Hot Swap Controller Negative Supply Rail Features ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Ordering Information ±10V to ±90V Operation Built-in “normally on” turn-on clamp eliminates components UV/OV Lock Out & Power-on-Reset for Debouncing


    Original     		PDF HV301/HV311 HV301 HV311 IRF530

    Untitled

    Abstract: No abstract text available
    Text: HV301/HV311 HV301 HV311 Hot Swap Controller Negative Supply Rail Features ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Ordering Information HV301, PWRGD is Active HIGH HV311, PWRGD is Active LOW 8 Lead SO Package Few External Components 10V to 90V Input Voltage Range


    Original     		PDF HV301/HV311 HV301 HV311 HV301, HV311, 100ms HV301LG HV311LG

    IRF530 application

    Abstract: hv301 hv311 HV311 HV301 HV301LG HV311LG IRF530 dc to dc converter 48v to 12v 10a diagram
    Text: HV301/HV311 HV301/HV311 Hot Swap Controller Negative Supply Rail Ordering Information Features ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ±10V to ±90V Operation Built-in “normally on” turn-on clamp eliminates components UV/OV Lock Out & Power-on-Reset for Debouncing


    Original     		PDF HV301/HV311 A092605 IRF530 application hv301 hv311 HV311 HV301 HV301LG HV311LG IRF530 dc to dc converter 48v to 12v 10a diagram

    IRF530 application

    Abstract: pwm 555 timer mosfet driver HV301 HV311 IRF530 circuit diagram of PWM USING IC 555 TIMER transistor irf530
    Text: HV301/HV311 HV301 HV311 Demo Kit Available Hotswap, Controllers with Circuit Breaker Negative Supply Rail Features General Description ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ The Supertex HV301 and HV311 Hotswap Controllers provide control of power supply connection during insertion of cards or


    Original     		PDF HV301/HV311 HV301 HV311 HV301 HV311 IRF530 application pwm 555 timer mosfet driver IRF530 circuit diagram of PWM USING IC 555 TIMER transistor irf530

    A0926

    Abstract: 10v ZENER DIODE
    Text: HV301/HV311 HV301/HV311 Hot Swap Controller Negative Supply Rail Ordering Information Features ! ! ! ! ! ! ! ! ! ! ! ! ! ±10V to ±90V Operation Built-in “normally on” turn-on clamp eliminates components UV/OV Lock Out & Power-on-Reset for Debouncing


    Original     		PDF HV301/HV311 HV301/HV311 A092605 A0926 10v ZENER DIODE

    Untitled

    Abstract: No abstract text available
    Text: HV301/HV311 HV301 HV311 Hot Swap Controller Negative Supply Rail Features ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Ordering Information HV301, PWRGD is Active HIGH HV311, PWRGD is Active LOW 8 Lead SO Package Few External Components ±10V to ±90V Input Voltage Range


    Original     		PDF HV301/HV311 HV301 HV311 HV301, HV311, 100ms Pin192

    Untitled

    Abstract: No abstract text available
    Text: HV301/HV311 HV301 HV311 Hot Swap Controller Negative Supply Rail d e d n e m m o ! c s e n R g i t s o e N D w e N r Fo Features ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Ordering Information ? 10V to ? 90V Operation Built-in “normally on” turn-on clamp eliminates components


    Original     		PDF HV301/HV311 HV301 HV311 HV301LG HV311LG

    TT220

    Abstract: transistor IRF 531 IRF 530 transistor 531
    Text: rZ 7 SGS-THOMSON A T Æ . IRF 530/FI-531/FI IRF 532/FI-533/FI IH D Ê IM ÎIlL U tô M K O D È S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA • • • • TYPE V DSS R DS on IRF530 IRF530FI 100 V 100 V 0.16 0.16 IRF531 IRF531FI


    OCR Scan     		PDF 530/FI-531/FI 532/FI-533/FI IRF530 IRF530FI IRF531 IRF531FI IRF532 IRF532FI IRF533 IRF533FI TT220 transistor IRF 531 IRF 530 transistor 531

    IRF 260 N

    Abstract: transistor IRF 531 transistor 531 IRF 530 ISOWATT-220 IRF530FI ISOWATT220 IRF530 530FI IRF532
    Text: 1 SGS-THOMSON 3QE D 7^237 0 02 ^77 3 S -TH O M S O N • • • • • "'P '3 > °ì~ \1 [RF 530/FI-531/FI IRF 532/FI-533/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V qss f*DS on IRF530 IRF530FI 100 V 100 V 0.16 ß 0.16 ß Id ' 14 A 9 A


    OCR Scan     		PDF 530/FI-531/FI 532/FI-533/FI IRF530 IRF530FI IRF531 IRF531FI IRF532 IRF532FI IRF533 IRF533FI IRF 260 N transistor IRF 531 transistor 531 IRF 530 ISOWATT-220 ISOWATT220 530FI

    IRF 260 N

    Abstract: transistor IRF 531 IRF 850 transistor 531 IRF 530
    Text: ¿ = 7 IRF 530/FI-531/FI IRF 532/FI-533/FI S G S -T H O M S O N ^ 7 # „ HlOiaiSiiBliaïUCTMMIKcül; N • CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIM INARY DATA TYPE V DSS ^DS on 'd ' IRF530 IRF530FI 100 V 100 V 0.16 n 0.16 n 14 A 9 A IRF531 IRF531FI


    OCR Scan     		PDF 530/FI-531/FI 532/FI-533/FI IRF530 IRF530FI IRF531 IRF531FI IRF532 IRF532FI IRF533 IRF533FI IRF 260 N transistor IRF 531 IRF 850 transistor 531 IRF 530