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Vishay Siliconix SIHF530-GE3 MOSFET N-CH 100V 14A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHF530-GE3	Cut Tape	971		1	1 $1.6 10 $1.012 100 $1.6 1000 $0.5309 10000 $0.5309	Buy Now
	SIHF530-GE3	Reel			1,000	1 - 10 - 100 - 1000 $0.38937 10000 $0.29925	Buy Now
Vishay Siliconix SIHF530STRL-GE3 MOSFET N-CH 100V 14A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHF530STRL-GE3	Digi-Reel	700		1	1 $1.61 10 $1.016 100 $1.61 1000 $1.61 10000 $1.61	Buy Now
	SIHF530STRL-GE3	Cut Tape	700		1	1 $1.61 10 $1.016 100 $1.61 1000 $1.61 10000 $1.61	Buy Now
	SIHF530STRL-GE3	Reel			800	1 - 10 - 100 - 1000 $0.50121 10000 $0.3875	Buy Now
RS	SIHF530STRL-GE3	Bulk			10	1 - 10 $1.33 100 $1.26 1000 $1.13 10000 $1.13	Get Quote
Vishay Intertechnologies SIHF530-GE3 MOSFET N-CHANNEL 100V - Tape and Reel (Alt: SIHF530-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHF530-GE3	Reel		8 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	SIHF530-GE3	Reel			1,000	1 - 10 - 100 - 1000 $0.389 10000 $0.301	Buy Now
Vishay Intertechnologies SIHF530STRL-GE3 MOSFET N-CHANNEL 100V - Tape and Reel (Alt: SIHF530STRL-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHF530STRL-GE3	Reel		8 Weeks	800	1 - 10 - 100 - 1000 $0.3875 10000 $0.36471	Buy Now
Mouser Electronics	SIHF530STRL-GE3		1,498			1 $1.61 10 $1.02 100 $0.671 1000 $0.469 10000 $0.387	Buy Now
Quest Components	SIHF530STRL-GE3		592			1 $2.5 10 $2.5 100 $0.75 1000 $0.65 10000 $0.65	Buy Now
TTI	SIHF530STRL-GE3	Reel	3,200		800	1 - 10 - 100 - 1000 $0.412 10000 $0.388	Buy Now
TME	SIHF530STRL-GE3				1	1 $0.738 10 $0.558 100 $0.443 1000 $0.398 10000 $0.398	Get Quote

Avnet Asia	SIHF530STRL-GE3			10 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SIHF530STRR-GE3 SIHF530STRR-GE3 N-channel MOSFET Transistor, 14 A, 100 V, 3-Pin D2PAK \| Siliconix / Vishay SIHF530STRR-GE3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SIHF530STRR-GE3	Bulk			10	1 - 10 $0.94 100 $0.9 1000 $0.8 10000 $0.8	Get Quote

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SIHF530 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHF530-GE3		Vishay Siliconix	MOSFET N-CH 100V 14A TO220AB		Original	PDF
SIHF530STRL-GE3		Vishay Siliconix	MOSFET N-CH 100V 14A D2PAK		Original	PDF

SIHF530 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRF530S Abstract: SiHF530S SiHF530S-E3 910-20-11 Text: IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21	Original	IRF530S, SiHF530S O-263) 2002/95/EC 11-Mar-11 IRF530S SiHF530S-E3 910-20-11	PDF
Untitled Abstract: No abstract text available Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature	Original	IRF530, SiHF530 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
IRF530SPBF Abstract: IRF530S SiHF530S SiHF530S-E3 IRF530STRLPBF IRF530STRL Text: IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRF530S, SiHF530S O-263) 18-Jul-08 IRF530SPBF IRF530S SiHF530S-E3 IRF530STRLPBF IRF530STRL	PDF
IRF530 vishay Abstract: SiHF530 IRF530PBF tr irf530 IRF530 SiHF530-E3 IRF530P Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature	Original	IRF530, SiHF530 O-220 O-220 18-Jul-08 IRF530 vishay IRF530PBF tr irf530 IRF530 SiHF530-E3 IRF530P	PDF
4026 datasheet Abstract: AN609 IRF530 SiHF530 IRF530R Text: IRF530_RC, SiHF530_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	IRF530 SiHF530 AN609, 01-Mar-10 4026 datasheet AN609 IRF530R	PDF
Untitled Abstract: No abstract text available Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature	Original	IRF530, SiHF530 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
IRF530S Abstract: No abstract text available Text: IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature	Original	IRF530S, SiHF530S 2002/95/EC O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 IRF530S	PDF
Untitled Abstract: No abstract text available Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature	Original	IRF530, SiHF530 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
IRF530 Abstract: No abstract text available Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature	Original	IRF530, SiHF530 O-220 O-220 12-Mar-07 IRF530	PDF
Untitled Abstract: No abstract text available Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature	Original	IRF530, SiHF530 2002/95/EC O-220AB O-220AB 11-Mar-11	PDF
cds photo diode Abstract: IRF530 marking Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature	Original	IRF530, SiHF530 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 cds photo diode IRF530 marking	PDF
IRF530S Abstract: No abstract text available Text: IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature	Original	IRF530S, SiHF530S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF530S	PDF
Untitled Abstract: No abstract text available Text: IRF530S, SiHF530S D FEATURES D2PAK TO-263 • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature • Fast Switching	Original	IRF530S, SiHF530S O-263) 2002/95/EC S-82110-Rev. 15-Sep-08 5M-1994. O-263AB.	PDF
IRF530S Abstract: No abstract text available Text: IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature	Original	IRF530S, SiHF530S 2002/95/EC O-263) 11-Mar-11 IRF530S	PDF

Untitled Abstract: No abstract text available Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature	Original	IRF530, SiHF530 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Untitled Abstract: No abstract text available Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature	Original	IRF530, SiHF530 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
91019-04 Abstract: No abstract text available Text: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature	Original	IRF530, SiHF530 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 91019-04	PDF
4026 datasheet Abstract: AN609 IRF530S SiHF530S Text: IRF530S_RC, SiHF530S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	IRF530S SiHF530S AN609, 01-Mar-10 4026 datasheet AN609	PDF
IRF530S Abstract: SiHF530S SiHF530S-E3 IRF530STRL Text: IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21	Original	IRF530S, SiHF530S O-263) 2002/95/EC 18-Jul-08 IRF530S SiHF530S-E3 IRF530STRL	PDF
IRF530S Abstract: No abstract text available Text: IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature	Original	IRF530S, SiHF530S 2002/95/EC O-263) 11-Mar-11 IRF530S	PDF
smd marking VB DIODE Abstract: SMD220 IRF530S Text: IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount 100 RDS(on) (Ω) VGS = 10 V Available • Available in Tape and Reel 0.16 RoHS* Qg (Max.) (nC) 26 • Dynamic dV/dt Rating Qgs (nC) 5.5 • Repetitive Avalanche Rated	Original	IRF530S, SiHF530S SMD-220 12-Mar-07 smd marking VB DIODE SMD220 IRF530S	PDF
INT-936 Abstract: INTDT93-4 AN949 AN-949 Text: VISHAY SILICONIX Power MOSFETs Application Note AN-949 Current Rating of Power Semiconductors TABLE OF CONTENTS Page What Is Current Rating?. 2	Original	AN-949 02-Jul-10 INT-936 INTDT93-4 AN949 AN-949	PDF

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SIHF530 Price and Stock

Vishay Siliconix SIHF530-GE3

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Vishay Siliconix SIHF530STRR-GE3

SIHF530 Datasheets (2)

SIHF530 Datasheets Context Search

IRF530S

Untitled

IRF530SPBF

IRF530 vishay

4026 datasheet

Untitled

IRF530S

Untitled

IRF530

Untitled

cds photo diode

IRF530S

Untitled

IRF530S

Untitled

Untitled

91019-04

4026 datasheet

IRF530S

IRF530S

smd marking VB DIODE

INT-936