DM 321
Abstract: IRF530 mosfet TA17411 RF1S540SM9A IRF530 data sheet in IRF530 datasheet N-Channel Switch intersil relay 6v 100 ohm tr irf530 IRF530
Text: 00-05-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-073-03 IRF530 MOSFET trans IRF530, RF1S530SM Data Sheet 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate
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IRF530
IRF530,
RF1S530SM
DM 321
IRF530 mosfet
TA17411
RF1S540SM9A
IRF530 data sheet in
IRF530 datasheet
N-Channel Switch intersil
relay 6v 100 ohm
tr irf530
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PDF
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transistor BUZ20
Abstract: buz20s TA17411 mos n fet e 75w BUZ20 TB334
Text: BUZ20 Semiconductor Data Sheet 12A, 100V, 0.200 Ohm, N-Channel Power MOSFET October 1998 File Number 2254.1 Features • 12A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.200Ω (BUZ20 field effect transistor designed for applications such as
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BUZ20
BUZ20
TA17411.
transistor BUZ20
buz20s
TA17411
mos n fet e 75w
TB334
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IRF130
Abstract: IRF132 IRF131 IRF133 TA17411 TB334 380uH
Text: IRF130, IRF131, IRF132, IRF133 S E M I C O N D U C T O R 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 12A and 14A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF130,
IRF131,
IRF132,
IRF133
IRF130
IRF132
IRF131
IRF133
TA17411
TB334
380uH
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PDF
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IRF530 mosfet
Abstract: TA17411 IRF530 TB334 irf530g
Text: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530 Data Sheet February 2002 14A, 100V, 0.160 Ohm, N-Channel Power
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IRF53
O220AB
O263AB
IRF530
IRF530 mosfet
TA17411
IRF530
TB334
irf530g
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PDF
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IRFF130
Abstract: TA17411 TB334 AVALANCHE TRANSISTOR
Text: IRFF130 Data Sheet March 1999 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET 1564.3 Features • 8.0A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF130
IRFF130
TA17411
TB334
AVALANCHE TRANSISTOR
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RF1S540
Abstract: RF1S540SM9A RF1S530SM OF IRF530 530uH
Text: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530, RF1S530SM Data Sheet May 2000 14A, 100V, 0.160 Ohm, N-Channel Power
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IRF530,
RF1S530SM
IRF53
O220AB
O263AB
RF1S540
RF1S540SM9A
RF1S530SM
OF IRF530
530uH
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PDF
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TA17411
Abstract: RF1S540SM9A RF1S530 IRF530 mosfet IRF530 RF1S530SM RF1S540SM TB334
Text: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IGNS DES W E T OR N DUC ED F TE PRO D N MME BSTITU ECO Data
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IRF53
O220AB
O263AB
Sheet30
IRF530,
RF1S530SM
TA17411
RF1S540SM9A
RF1S530
IRF530 mosfet
IRF530
RF1S530SM
RF1S540SM
TB334
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PDF
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TA17411
Abstract: IRF130 TB334
Text: IRF130 Data Sheet March 1999 14A, 100V, 0.160 Ohm, N-Channel Power MOSFET 1566.4 Features • 14A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF130
TA17411.
TA17411
IRF130
TB334
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PDF
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TA17411
Abstract: RF1S530 RF1S530SM RF1S530SM9A RF1S540SM TB334
Text: RF1S530SM TM Data Sheet 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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RF1S530SM
TA17411.
TA17411
RF1S530
RF1S530SM
RF1S530SM9A
RF1S540SM
TB334
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PDF
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TA17411
Abstract: IRFF130
Text: IRFF130 Data Sheet Title FF1 bt 0A, 0V, 80 m, March 1999 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF130
TA17411
IRFF130
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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PDF
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RF1S530SM
Abstract: TA17411 RF1S530 RF1S530SM9A RF1S540SM TB334
Text: RF1S530SM Data Sheet 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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RF1S530SM
TA17411.
O-263AB
RF1S530SM
TA17411
RF1S530
RF1S530SM9A
RF1S540SM
TB334
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PDF
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IRFF130
Abstract: No abstract text available
Text: IRFF130, IRFF131, IRFF132, IRFF133 S E M I C O N D U C T O R 7.0A and 8.0A, 80V and 100V, 0.18 and 0.25 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 7.0A and 8.0A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRFF130,
IRFF131,
IRFF132,
IRFF133
TA17411.
IRFF130
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PDF
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IRFF130
Abstract: TA17411 TB334
Text: IRFF130 Data Sheet January 2002 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8.0A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF130
IRFF130
TA17411
TB334
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Untitled
Abstract: No abstract text available
Text: i H A R R IRFF130, IRFF131, IRFF132, IRFF133 i s s e - c o . o u c t o r 7.0A and 8.0A, 80V and 100V, 0.18 and 0.25 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 7.0A and 8.0A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRFF130,
IRFF131,
IRFF132,
IRFF133
RFF133
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PDF
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irf130
Abstract: IRF133 IRF132 IRF131 IRF130 mosfet
Text: IRF130, IRF131, IRF132, IRF133 HARRIS S E M I C O N D U C T O R 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs October 1997 Description Features • High Input Im pedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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OCR Scan
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IRF130,
IRF131,
IRF132,
IRF133
TA17411.
irf130
IRF133
IRF132
IRF131
IRF130 mosfet
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PDF
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IRF530
Abstract: IR IRF532 IRF531 OF IRF530 TA17411 f531 RF1S540 RF1S540SM9A irf532 rf1s530sm
Text: P *3 3 S IRF530, IRF531, IRF532, IRF533, RF1S530, RF1S530SM 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 12A and 14A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRF530,
IRF531,
IRF532,
IRF533,
RF1S530,
RF1S530SM
IRF530
IR IRF532
IRF531
OF IRF530
TA17411
f531
RF1S540
RF1S540SM9A
irf532
rf1s530sm
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PDF
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Untitled
Abstract: No abstract text available
Text: BUZ20 Semiconductor October 1998 Data Sheet 12A, 100V, 0.200 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,
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OCR Scan
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BUZ20
TA17411.
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PDF
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Untitled
Abstract: No abstract text available
Text: iH A R R is SEMIC0NDUCT0R IRF130, IRF131, IRF132, IRF133 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 12A and 14A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRF130,
IRF131,
IRF132,
IRF133
TA17411.
RF130,
RF132,
RF133
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PDF
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TA17411
Abstract: No abstract text available
Text: IRF530, RF1S530SM S e m iconductor Data Sheet 14A, 100 V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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OCR Scan
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IRF530,
RF1S530SM
160i2
TA17411
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PDF
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transco
Abstract: IRFF131
Text: ih a r r is IRFF130, IRFF131, IRFF132, IRFF133 7.0A and 8.0A, 80V and 100V, 0.18 and 0.25 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 7.0A and 8.0A, 80V and 100V • High Input Im pedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRFF130,
IRFF131,
IRFF132,
IRFF133
TA17411.
IRFF132
transco
IRFF131
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PDF
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